Photoinduced Selective Deposition of Aluminium Thin Film Using Dimethylaluminum Hydride

1991 ◽  
Vol 236 ◽  
Author(s):  
Mitsugu Hanabusa ◽  
Hideki Ouchi ◽  
Kenji Ishida ◽  
Masahiro Kawasaki ◽  
Satoshi Shogen
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Surface Reaction ◽  
Silicon Oxide ◽  
Film Growth ◽  
X Ray ◽  
Etched Silicon ◽  
Substrate Surfaces ◽  
Deuterium Lamp ◽  
Dimethylaluminum Hydride

AbstractAluminum thin film was deposited via a photochemical surface reaction of dimethylaluminum hydride (DMAH) using a deuterium lamp. The period required to initiate the film growth differed with substrate, and making use of this result the film could be grown preferentially on silicon nitride and silicon oxide layers rather than on wet-etched silicon. On the basis of an x-ray photoelectron spectroscopy the observed dependence of photodeposition on substrate surfaces can be attributed to how DMAH is chemisorbed initially.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

2015 ◽  
Vol 1731 ◽  
Author(s):  
M. Baseer Haider ◽  
Mohammad F. Al-Kuhaili ◽  
S. M. A. Durrani ◽  
Venkatesh Singaravelu ◽  
Iman Roqan
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Study ◽  
Secondary Phases ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Doped Zno

ABSTRACTThin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase.

Optical Properties of Si and Ge/Si Nanocrystals in Silicon Oxide Matrix

2006 ◽  
Vol 958 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Atsuhiko Kushida
Keyword(s):  
Thin Film ◽  
Raman Scattering ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxygen Defect ◽  
X Ray ◽  
Defect Centers ◽  
Si Nanocrystals ◽  
Pl Intensity

ABSTRACTThe contribution of oxide-related emission in Photoluminescence (PL) spectra from Ge and Si nanocrystals mixture embedded in silicon oxide (Ge/Si-SiO2) and Si nanocrystals embedded in silicon oxide (Si-SiO2) thin film prepared by RF-magnetron co-sputtering method is investigated. All as-deposited thin films were annealed for 1 hour in the temperature range from 300 to 1100 °C in an Ar atmosphere. The samples were evaluated by using PL, Energy dispersive spectroscopy (EDX), Raman scattering and X-ray photoelectron spectroscopy (XPS) measurements. All the measurements were performed at room temperature. The maximum PL intensity of Ge+Si-SiO2 mixture thin film has increased more than the Si-SiO2 thin film by approximately 10 times. From the results of Raman scattering and XPS measurements, it is consider that the oxygen defect centers in the host material SiO2 increased by the diffusion of Ge. An increase in the PL intensity of Ge+Si-SiO2 mixture thin film is systematically discussed.

Characterization of TiOxNy Films Grown by PECVD Method: Structural and Optical Properties

2006 ◽  
Vol 111 ◽  
pp. 151-154 ◽  
Author(s):  
C.K. Jung ◽  
I.S. Bae ◽  
Y.H. Song ◽  
S.J. Cho ◽  
Jin Hyo Boo
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Nitrogen Flow ◽  
Nitrogen Flow Rate ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Constituent Elements

Titanium oxynitride (TiOxNy) films were prepared by RF PECVD on Si(100) and glass substrates using nitrogen and argon mixture gas. Titanium iso-propoxide (Ti[OCH(CH3) 2] 4, 97%) was used as precursor with different nitrogen flow rate to control oxygen and nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy (XPS) analysis. With increasing nitrogen flow rate the total amount of nitrogen was increased while that of oxygen was decreased. The film growth orientation and N-H peak intensity characteristics were also analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), and infrared spectroscopy (FT-IR). Through refractive index as well as contact angle analysis, we can suggest that relationship to surface energy and optical property. Moreover, transmission electron microscopy (TEM) was also used to investigate the morphology of TiOxNy thin film and the phase of the TiOxNy thin film different nitrogen flow rate.

scholarly journals Surface Termination Conversion during SrTiO3 Thin Film Growth Revealed by X-ray Photoelectron Spectroscopy

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Christoph Baeumer ◽  
Chencheng Xu ◽  
Felix Gunkel ◽  
Nicolas Raab ◽  
Ronja Anika Heinen ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Thin Film Growth ◽  
X Ray ◽  
Surface Termination

scholarly journals Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

Coatings ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 105
Author(s):  
Seung Hyun Park ◽  
Kyung Eon Kim ◽  
Sang Jeen Hong
Keyword(s):  
Photoelectron Spectroscopy ◽  
Yttrium Aluminum Garnet ◽  
Silicon Oxide ◽  
Ceramic Materials ◽  
High Plasma ◽  
Coating Materials ◽  
Continuous Increase ◽  
X Ray ◽  
Bonding Structure ◽  
Manufacturing Environments

Coating the inner surfaces of high-powered plasma processing equipment has become crucial for reducing maintenance costs, process drift, and contaminants. The conventionally preferred alumina (Al2O3) coating has been replaced with yttria (Y2O3) due to the long-standing endurance achieved by fluorine-based etching; however, the continuous increase in radio frequency (RF) power necessitates the use of alternative coating materials to reduce process shift in a series of high-powered semiconductor manufacturing environments. In this study, we investigated the fluorine-based etching resistance of atmospheric pressure-sprayed alumina, yttria, yttrium aluminum garnet (YAG), and yttrium oxyfluoride (YOF). The prepared ceramic-coated samples were directly exposed to silicon oxide etching, and the surfaces of the plasma-exposed samples were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. We found that an ideal coating material must demonstrate high plasma-induced structure distortion by the fluorine atom from the radical. For endurance to fluorine-based plasma exposure, the bonding structure with fluoride was shown to be more effective than oxide-based ceramics. Thus, fluoride-based ceramic materials can be promising candidates for chamber coating materials.

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