Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

2015 ◽  
Vol 1731 ◽  
Author(s):  
M. Baseer Haider ◽  
Mohammad F. Al-Kuhaili ◽  
S. M. A. Durrani ◽  
Venkatesh Singaravelu ◽  
Iman Roqan
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Study ◽  
Secondary Phases ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Doped Zno

ABSTRACTThin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase.

Effects of sputtering power toward the Al-doped ZnO thin Film prepared by pulsed DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6466-6471 ◽  
Author(s):  
Kittikhun Seawsakul ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Viyapol Pattantsetakul ◽  
Saksorn Limwichean ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Zno Thin Film ◽  
Dc Magnetron Sputtering ◽  
Pulsed Dc ◽  
Sputtering Power ◽  
Doped Zno ◽  
Pulsed Dc Magnetron Sputtering

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

scholarly journals Magnetron Sputtering of Nanolaminated Cr2AlB2

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 735
Author(s):  
Pedro Berastegui ◽  
Lars Riekehr ◽  
Ulf Jansson
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
X Ray Diffraction ◽  
Max Phases ◽  
Group 13 ◽  
X Ray ◽  
Early Transition Metal ◽  
Crystalline Films ◽  
Combinatorial Sputtering

A ternary Cr2AlB2 phase was deposited as a film using magnetron sputtering. Its anisotropic structure displays both structural and chemical similarities with the nanolaminated MAX phases (Mn+1AXn (n = 1–3) where M usually is an early transition metal, A is typically an element in group 13–14 and X is C or N), and can be described as CrB slabs separated by layers of Al. Combinatorial sputtering was used to optimise the sputtering process parameters for films with the Cr2AlB2 composition. The influences of substrate, temperature and composition were studied using X-ray diffraction, X-ray photoelectron spectroscopy and electron microscopy. Films deposited at room temperature were X-ray amorphous but crystalline films could be deposited on MgO substrates at 680 °C using a composite Al-B, Cr and Al targets. X-ray diffraction analyses showed that the phase composition and texture of the films was strongly dependent on the chemical composition. Films with several phases or with a single Cr2AlB2 phase could be deposited, but an additional Al target was required to compensate for a loss of Al at the high deposition temperatures used in this study. The microstructure evolution during film growth was strongly dependent on composition, with a change in texture in Al-rich films from a preferred [010] orientation to a [100]/[001] orientation. A model based on Al desorption from the surface of the growing grains is proposed to explain the texture variations.

scholarly journals The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 253 ◽  
Author(s):  
Wei-Chun Chen ◽  
Chao-Te Lee ◽  
James Su ◽  
Hung-Pin Chen
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Film Structure ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
X Ray

Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.

scholarly journals Polystyrene as Graphene Film and 3D Graphene Sponge Precursor

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 101 ◽  
Author(s):  
Alejandra Rendón-Patiño ◽  
Jinan Niu ◽  
Antonio Doménech-Carbó ◽  
Hermenegildo García ◽  
Ana Primo
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
Graphene Film ◽  
Visible Absorption ◽  
X Ray ◽  
3D Graphene ◽  
Force Microscopy ◽  
Atomic Force ◽  
Graphene Sponge

Polystyrene as a thin film on arbitrary substrates or pellets form defective graphene/graphitic films or powders that can be dispersed in water and organic solvents. The materials were characterized by visible absorption, Raman and X-ray photoelectron spectroscopy, electron and atomic force microscopy, and electrochemistry. Raman spectra of these materials showed the presence of the expected 2D, G, and D peaks at 2750, 1590, and 1350 cm−1, respectively. The relative intensity of the G versus the D peak was taken as a quantitative indicator of the density of defects in the G layer.

The Study of Al-N Codoped ZnO Thin Films Prepared by DC Magnetron Sputtering

2015 ◽  
Vol 754-755 ◽  
pp. 591-594
Author(s):  
Haslinda Abdul Hamid ◽  
M.N. Abdul Hadi
Keyword(s):  
Magnetron Sputtering ◽  
Structural Investigation ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oxygen Gas ◽  
Film Roughness

The codoped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200 °C and 600 °C for 1 hour in nitrogen and oxygen gas mixture. Structural investigation was carried out by scanning electron microscopy (SEM), atomic force microscopy and x-ray diffraction (XRD). Film roughness and grain shape were found to be correlated with the annealing temperatures.

Photoinduced Selective Deposition of Aluminium Thin Film Using Dimethylaluminum Hydride

1991 ◽  
Vol 236 ◽  
Author(s):  
Mitsugu Hanabusa ◽  
Hideki Ouchi ◽  
Kenji Ishida ◽  
Masahiro Kawasaki ◽  
Satoshi Shogen
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Surface Reaction ◽  
Silicon Oxide ◽  
Film Growth ◽  
X Ray ◽  
Etched Silicon ◽  
Substrate Surfaces ◽  
Deuterium Lamp ◽  
Dimethylaluminum Hydride

AbstractAluminum thin film was deposited via a photochemical surface reaction of dimethylaluminum hydride (DMAH) using a deuterium lamp. The period required to initiate the film growth differed with substrate, and making use of this result the film could be grown preferentially on silicon nitride and silicon oxide layers rather than on wet-etched silicon. On the basis of an x-ray photoelectron spectroscopy the observed dependence of photodeposition on substrate surfaces can be attributed to how DMAH is chemisorbed initially.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Multilayer Coatings for Focusing Hard X-ray Telescopes

1998 ◽  
Vol 551 ◽  
Author(s):  
A. Ivan ◽  
R. Bruni ◽  
K. Byun ◽  
J. Everett ◽  
P. Gorenstein ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Single Layer ◽  
Multilayer Coatings ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Auger Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Specular Reflectivity

AbstractSeveral multilayer test coatings for hard X-ray telescopes were fabricated using DC magnetron sputtering. The process parameters were selected from a series of trials of single layer depositions. The samples were characterized using X-ray specular reflectivity scans, AFM, and cross-sectional TEM. Additional measurements (stylus profilometry, RBS, and Auger analysis) were used in the optimization of the deposition rate and of the thin film properties (density, composition, surface/interface microroughness). The X-ray reflectivity scans showed that the combinations of reflector and spacer materials tested so far (W/Si and W/C) are suited for graded d-spacing multilayer coatings that present a constant reflectivity bandpass up to 70 keV.

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