Resistless Etching of SiO2 by Two Color Excimer Lasers

1991 ◽  
Vol 236 ◽  
Author(s):  
T. Obara ◽  
M. Murahara
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Laser Light ◽  
Excimer Lasers ◽  
Etching Pattern ◽  
Thermal Oxide ◽  
Krf Laser ◽  
Arf Excimer Laser

AbstractResistless etching of thermal oxide silicon filmes were demonstrated by ArF & KrF excimer lasers, and CC12F2 gases. CC12F2 was decomposed by ArF excimer laser light, and CF2 radicals were produced. These radicals, which have absorption band nearby 250nm, were vary stable. Then the circuit pattarned KrF laser light was irradiated on the SiO2 in an atomsphere of CF2 radicals. As thse result, the etching pattern of 2 μ m width was performed.

scholarly journals Resists Using the Absorption Band Shift Method for ArF Excimer Laser Lithography.

1998 ◽  
Vol 11 (3) ◽  
pp. 489-492
Author(s):  
Takeshi Okino ◽  
Koji Asakawa ◽  
Naomi Shida ◽  
Tohru Ushirogouchi
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Band Shift ◽  
Shift Method ◽  
Laser Lithography ◽  
Arf Excimer Laser

Photochemical Pattern Etching of Single-Crystalline 3C-SiC

1997 ◽  
Vol 495 ◽  
Author(s):  
T. Mori ◽  
K. Hatao ◽  
M. Murahara
Keyword(s):  
Excimer Laser ◽  
Surface Reaction ◽  
Laser Light ◽  
Sample Surface ◽  
Etch Depth ◽  
Reaction Cell ◽  
Single Crystalline ◽  
Excimer Lamp ◽  
Krf Laser ◽  
Krf Excimer Laser

ABSTRACTA single-crystalline 3C-SiC is very difficult to etch compared with a polycrystalline SiC. Thus, a photochemical pattern etching of the SiC was demonstrated by using Xe2* excimer lamp and ArF or KrF excimer laser. To promote the surface reaction, a Xe2* excimer lamp was employed to produce many radicals on the sample surface; simultaneously, ArF or KrF laser light irradiated the surface via a circuit pattern to dissociate the Si-C bonds. The Si and C reacted with the F and N radicals photo-dissociated from NF3 gas to form SiF4, CFn and CN, which diffused in the reaction cell. As a result, the single-crystalline 3C-SiC was photo-chemically etched effectively. With the NF3 gas of 200Torr, the Xe2* excimer lamp of 7mW/cm2, and the KrF excimer laser of 650mJ/cm2, 20Hz and 10,000shots, the etch depth of 700 Å was successfully achieved.

Chemically ampilified ArF excimer laser resists using the absorption band shift method

1995 ◽  
Author(s):  
Makoto Nakase ◽  
Takuya Naito ◽  
Koji Asakawa ◽  
Akinori Hongu ◽  
Naomi Shida ◽  
...  
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Band Shift ◽  
Shift Method ◽  
Arf Excimer Laser

Excimer Laser Induced Etching of Silicon-Carbide

1988 ◽  
Vol 129 ◽  
Author(s):  
M. Murahara ◽  
H. Arai ◽  
T. Matsumura
Keyword(s):  
Absorption Band ◽  
Laser Beam ◽  
Excimer Laser ◽  
Etching Rate ◽  
Laser Beams ◽  
Absorption Factor ◽  
Total Flow ◽  
Krf Laser ◽  
Krf Excimer Laser ◽  
Laser Induced Etching

ABSTRACTResistless photoetching of SiC was performed by using XeF and KrF excimer laser beams. In this method, ClF3 gas was used for etchant. C1F3 gas has a unique absorption band in the range of 300- 430 nm. The strongest absorption band corresponds to the wavelength of the XeF laser (350 nm). So C1F3 gas is decomposed effectively. On the other hand, the absorption factor of SiC is about 30% in the range of 200-400 nm, and the bonding energy of SiC is lower than the photon energy of the KrF laser beam. For these reasons, it is possible to cut the bond of SiC directly. Thus, two laser beams were used. Fluence of the KrF laser beam was 200 mJ/cm2, of the XeF, 50 mJ/cm2. Total flow rates through the cell were 0.05 1/min. We can fabricated the etched feature of reticle pattern by reductive projection. Line and space was 10 μm and etching rate was 50Å/pulse.

1701 Birefringence Analysis for Calcium Fluoride Single Crystal Used as Chamber Window of ArF Excimer Laser Light Source

2010 ◽  
Vol 2010.23 (0) ◽  
pp. 437-438
Author(s):  
Yuta KITAMURA ◽  
Noriyuki MIYAZAKI ◽  
Takahito KUMAZAKI ◽  
Naoto NAGAKURA ◽  
Yasuhiro HASHIMOTO ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Source ◽  
Excimer Laser ◽  
Calcium Fluoride ◽  
Laser Light ◽  
Arf Excimer Laser ◽  
Laser Light Source

Dynamic change of transmission of CaF 2 single crystals by irradiating with ArF excimer laser light

2000 ◽  
Author(s):  
Jochen Alkemper ◽  
Joerg Kandler ◽  
Lorenz Strenge ◽  
Ewald Moersen ◽  
Christian Muehlig ◽  
...  
Keyword(s):  
Single Crystals ◽  
Excimer Laser ◽  
Laser Light ◽  
Dynamic Change ◽  
Arf Excimer Laser

ArF Laser Induced Photochemical Substitution of OH Radicals into Teflon Surface Using Al(OH)3 Solution

1992 ◽  
Vol 279 ◽  
Author(s):  
M. Okoshi ◽  
H. Kashiura ◽  
T. Miyokawa ◽  
K. Toyoda ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
Excimer Laser ◽  
Laser Light ◽  
Water Solution ◽  
Sample Surface ◽  
Oh Radicals ◽  
Xps Analysis ◽  
Air Atmosphere ◽  
Arf Excimer Laser ◽  
Teflon Film

ABSTRACTOH radicals were photochemically substituted for fluorine atoms in the teflon surface by using an ArF excimer laser light and an Al(OH)3 solution. This method is simple and can be performed in air atmosphere. In the process, the teflon film was placed on the Al(OH)3 which were dissolved in NaOH water solution; the ArF excimer laser light was irradiated the sample surface and the solution. By irradiating the laser, the surface was defluorinated by the aluminium atoms photodissociated from the Al(OH)3 solution, and the dangling bonds which were formed in the defluorinated surface combined with the OH radicals also photodissociated. The hydrophilic property of the photomodified surface was evaluated by the measurement of the contact angle with water. The defluorination and the OH radicals substitution were inspected by the XPS analysis and the ATR-FTIR measurement.

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