Excimer Laser Induced Etching of Silicon-Carbide

1988 ◽  
Vol 129 ◽  
Author(s):  
M. Murahara ◽  
H. Arai ◽  
T. Matsumura
Keyword(s):  
Absorption Band ◽  
Laser Beam ◽  
Excimer Laser ◽  
Etching Rate ◽  
Laser Beams ◽  
Absorption Factor ◽  
Total Flow ◽  
Krf Laser ◽  
Krf Excimer Laser ◽  
Laser Induced Etching

ABSTRACTResistless photoetching of SiC was performed by using XeF and KrF excimer laser beams. In this method, ClF3 gas was used for etchant. C1F3 gas has a unique absorption band in the range of 300- 430 nm. The strongest absorption band corresponds to the wavelength of the XeF laser (350 nm). So C1F3 gas is decomposed effectively. On the other hand, the absorption factor of SiC is about 30% in the range of 200-400 nm, and the bonding energy of SiC is lower than the photon energy of the KrF laser beam. For these reasons, it is possible to cut the bond of SiC directly. Thus, two laser beams were used. Fluence of the KrF laser beam was 200 mJ/cm2, of the XeF, 50 mJ/cm2. Total flow rates through the cell were 0.05 1/min. We can fabricated the etched feature of reticle pattern by reductive projection. Line and space was 10 μm and etching rate was 50Å/pulse.

Holographic Pattern Etching of Silicon—Carbide by Excimer Laser

1989 ◽  
Vol 158 ◽  
Author(s):  
M. Murahara ◽  
M. Yonekawa ◽  
K. Shirakawa
Keyword(s):  
Laser Beam ◽  
Present Method ◽  
Etching Rate ◽  
The Other ◽  
Laser Beams ◽  
Excimer Lasers ◽  
Holographic Method ◽  
Etching Depth ◽  
Krf Laser ◽  
193 Nm

ABSTRACTThe diffraction grating on SiC mirror was performed by a laser holographic method. In the present method, KrF laser and CIF3 was used for etchant gas. The ClF3 gas has an absorption band in the range between 200 and 400 nm. Therefore, CIF3 gas is effectively decomposed by the XeF, KrF and ArF excimer lasers' radiation. It is found that absorption of Si—C is about 50% in the range of between200 and 400 nm, and that the bonding energy of Si—C is lower than the photon energy of KrF laser beam. The above results indicate the direct decomposition of Si—Cbond. On the other hand, the threshold fluence energy for etching was 800 mJ/cm2 in 249 nm and in 193 nm as high as 7 J/cm2. In these results, the KrF laser is more effective than ArF laser. Then we applied KrF laser to crystalline SiC in an atmosphere of C1F3 gas. The divided two polarized KrF laser beams were interfered on the substrate. And the beams were used to photodissociated CIF3 gas in the proximity of substrate. Fluence of KrF laser beam was 1 J/cm2. The incidential angle of KrF laser beams was 20º and the grating gaps were 7170 Å, etching depth 1000 Å, and etching rate was 5 Å/pulse.

Microfabrication of Polymers Using KrF Excimer Laser Beam

2006 ◽  
Vol 326-328 ◽  
pp. 115-118
Author(s):  
Dong Sig Shin ◽  
Jae Hoon Lee ◽  
Jeong Suh
Keyword(s):  
Laser Ablation ◽  
Binding Energy ◽  
Laser Beam ◽  
Excimer Laser ◽  
Polymer Chains ◽  
Laser Beams ◽  
Adhesive Tape ◽  
Uv Laser ◽  
Laser Process ◽  
Krf Excimer Laser

Pulsed UV laser beams, which are widely used in the processing of polymers, offer many advantages in the field of polymer production, primarily because their photon energy is higher than the binding energy of the polymer. In particular, the fabrication of polymers with an excimer laser process is faster and more convenient than with other processes. Nevertheless, some problems occur in the precision microprocessing of polymers, including the formation and deposition of surface debris, which is produced from the breakdown of either polymer chains or radical bonds. In the present work, a process for eliminating carbonized surface debris contamination generated by the laser ablation of a polymer was developed. The proposed approach for removing surface debris utilizes an erasable ink pasted on the polymer. The surface debris ejected from the polymer is then combined with the ink layer on the polymer. Finally, both the surface debris and the ink layer can be removed using adhesive tape.

Photochemical Pattern Etching of Single-Crystalline 3C-SiC

1997 ◽  
Vol 495 ◽  
Author(s):  
T. Mori ◽  
K. Hatao ◽  
M. Murahara
Keyword(s):  
Excimer Laser ◽  
Surface Reaction ◽  
Laser Light ◽  
Sample Surface ◽  
Etch Depth ◽  
Reaction Cell ◽  
Single Crystalline ◽  
Excimer Lamp ◽  
Krf Laser ◽  
Krf Excimer Laser

ABSTRACTA single-crystalline 3C-SiC is very difficult to etch compared with a polycrystalline SiC. Thus, a photochemical pattern etching of the SiC was demonstrated by using Xe2* excimer lamp and ArF or KrF excimer laser. To promote the surface reaction, a Xe2* excimer lamp was employed to produce many radicals on the sample surface; simultaneously, ArF or KrF laser light irradiated the surface via a circuit pattern to dissociate the Si-C bonds. The Si and C reacted with the F and N radicals photo-dissociated from NF3 gas to form SiF4, CFn and CN, which diffused in the reaction cell. As a result, the single-crystalline 3C-SiC was photo-chemically etched effectively. With the NF3 gas of 200Torr, the Xe2* excimer lamp of 7mW/cm2, and the KrF excimer laser of 650mJ/cm2, 20Hz and 10,000shots, the etch depth of 700 Å was successfully achieved.

Selective Deposition of ZnS Thin Films by KrF Excimer Laser on Patterned Zn Seeds

1993 ◽  
Vol 334 ◽  
Author(s):  
K. Yamane ◽  
M. Murahara
Keyword(s):  
Excimer Laser ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Chemical Vapor Deposition Method ◽  
Single Shot ◽  
Laser Chemical Vapor Deposition ◽  
Krf Laser ◽  
Krf Excimer Laser ◽  
Zns Films

AbstractThe patterned Zn nucleation and the ZnS growth onto the Zn seeds on a thermal oxidized silicon substrate was demonstrated at room temperature with the excimer laser chemical vapor deposition method.The formation of ZnS films was realized by the method based on the two—step process consisting of the nucleation and the subsequent ZnS growth. In the nucleation, a gaseous dimethylzinc was sealed in a reaction chamber and was then evacuated immediately. Then, the substrate surface which was uniformly adsorbed by dimethylzinc molecules was exposed with a single shot irradiation of a patterned KrF laser; Zn seeds were created only on the irradiated parts by a photodecomposition. And the subsequent growth of ZnS was performed by the parallel or perpendicular irradiation methods. As a result, in the perpendicular irradiation method, the high selectivity and crystallinity of the film were performed by irradiating the whole substrate surface with very low fluence of the KrF laser such as 3 mJ/cm2.

Wavelength Stability with an Injection-Locked Excimer Laser

1989 ◽  
Vol 43 (8) ◽  
pp. 1368-1370 ◽  
Author(s):  
Thomas J. Vickers ◽  
Charles K. Mann ◽  
Chan Kong Chong ◽  
Jianxiong Zhu
Keyword(s):  
Excimer Laser ◽  
Uv Radiation ◽  
Resonance Raman ◽  
Uv Resonance Raman ◽  
Krf Laser ◽  
Krf Excimer Laser

Linewidth and wavelength measurements have been made on the emission from an injection-locked KrF laser to address questions which have been raised about the suitability of this device for UV resonance Raman measurements. To the extent that any wavelength jitter occurs, it is less than 0.004 Å. We conclude that the KrF excimer laser is a relatively robust source of UV radiation for Raman measurements.

Study of the structure and parameters of a KrF excimer laser beam

2012 ◽  
Vol 57 (12) ◽  
pp. 1681-1686 ◽  
Author(s):  
Yu. M. Zadiranov ◽  
S. G. Kalmykov ◽  
M. E. Sasin ◽  
P. Yu. Serdobintsev
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Krf Excimer Laser

High etching rate of GaN films by KrF excimer laser

2001 ◽  
Vol 82 (1-3) ◽  
pp. 42-44 ◽  
Author(s):  
Chen-Fu Chu ◽  
C.K Lee ◽  
C.C Yu ◽  
Y.K Wang ◽  
J.Y Tasi ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Etching Rate ◽  
High Etching Rate ◽  
Krf Excimer Laser
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