Chemically ampilified ArF excimer laser resists using the absorption band shift method

1995 ◽  
Author(s):  
Makoto Nakase ◽  
Takuya Naito ◽  
Koji Asakawa ◽  
Akinori Hongu ◽  
Naomi Shida ◽  
...  
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Band Shift ◽  
Shift Method ◽  
Arf Excimer Laser

scholarly journals Resists Using the Absorption Band Shift Method for ArF Excimer Laser Lithography.

1998 ◽  
Vol 11 (3) ◽  
pp. 489-492
Author(s):  
Takeshi Okino ◽  
Koji Asakawa ◽  
Naomi Shida ◽  
Tohru Ushirogouchi
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Band Shift ◽  
Shift Method ◽  
Laser Lithography ◽  
Arf Excimer Laser

Highly Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7028-7032 ◽  
Author(s):  
Takuya Naito ◽  
Koji Asakawa ◽  
Naomi Shida ◽  
Tohru Ushirogouchi ◽  
Makoto Nakase
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Band Shift ◽  
Chemically Amplified ◽  
Arf Excimer Laser ◽  
193 Nm

Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method

1998 ◽  
Author(s):  
Naomi Shida ◽  
Takeshi Okino ◽  
Koji Asakawa ◽  
Tohru Ushirogouchi ◽  
Makoto Nakase
Keyword(s):  
Absorption Band ◽  
Band Shift ◽  
Shift Method ◽  
Chemically Amplified

Excimer Laser Induced 5.8 eV Absorption and 1.9 eV Emission Bands in Fused Silicas

1991 ◽  
Vol 244 ◽  
Author(s):  
Nobu Kuzuu ◽  
Yasutaka Matsumoto ◽  
Masataka Murahara
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Fused Silica ◽  
Absorption Bands ◽  
Type Iii ◽  
Arf Excimer Laser ◽  
The Creation ◽  
The Difference ◽  
Order Structures ◽  
Reducing Condition

ABSTRACTCharacteristics of ArF excimer laser induced 1.9 eV emission and 5.8 eV absorption bands in type III and soot remelted silicas were investigated. In a type III silica synthesized in a reducing condition, an absorption band at 5.8 eV band is induced. The creation of this band can be prevented by annealing in an atmosphere of He. In the soot remelted silicas with and without OH, the creation of the 5.8 eV band is strongly promoted by annealing in H2. An emission band at 1.9 eV is induced in a type III fused silica synthesized in an oxydizing condition and soot remelted silica containing OH. When annealing in He, creation of the 1.9 eV band is strongly promoted in the former but suppressed in the latter sample. This difference is derived from the difference of higher order structures between the type III and the soot remelted silicas.

Modification of Fused Silica Materials for Excimer Laser Optics—measurement of laser induced defects and its reformation—

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasutaka Matsumoto ◽  
Yoshihiro Yoshikado ◽  
Masataka Murahara
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Laser Processing ◽  
Fused Silica ◽  
Laser Lithography ◽  
Silica Materials ◽  
Laser Optics ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Induced Defects

ABSTRACTFused silica is widely used material in window and lens applications for excimer laser processing. The transmittance of the laser beam in fused silica is attenuated approximately 40% by high fluence ArF excimer laser irradiation. The attenuation of the transmittance corresponds to the growth of an absorption band at 215nm. This phenomenon is troublesome for laser lithography. To investigate this effect, we examined the laser induced luminescence and absorption under various conditions. The 215nm absorption band was diminished by annealing at 900 °C for 2 hours in He ambient. Ke could successfully obtain good optical material, whose transmittance remains constant with increasing ArF laser(193nm) shot exposure.

Resistless Etching of SiO2 by Two Color Excimer Lasers

1991 ◽  
Vol 236 ◽  
Author(s):  
T. Obara ◽  
M. Murahara
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Laser Light ◽  
Excimer Lasers ◽  
Etching Pattern ◽  
Thermal Oxide ◽  
Krf Laser ◽  
Arf Excimer Laser

AbstractResistless etching of thermal oxide silicon filmes were demonstrated by ArF & KrF excimer lasers, and CC12F2 gases. CC12F2 was decomposed by ArF excimer laser light, and CF2 radicals were produced. These radicals, which have absorption band nearby 250nm, were vary stable. Then the circuit pattarned KrF laser light was irradiated on the SiO2 in an atomsphere of CF2 radicals. As thse result, the etching pattern of 2 μ m width was performed.

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
High Resolution ◽  
Laser Beam ◽  
Thin Layer ◽  
Functional Groups ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Large Area ◽  
Three Solutions ◽  
Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

Sign in / Sign up

Export Citation Format

Share Document