Examination of Ion Beam-Target Angle Effects by Optical Spectroscopic Profiling

1991 ◽  
Vol 235 ◽  
Author(s):  
J. D. Klein ◽  
A. Yen
Keyword(s):  
Ion Beam ◽  
Emission Spectra ◽  
Optical Emission ◽  
Target Surface ◽  
Normal Incidence ◽  
Ion Beam Sputtering ◽  
Similar Shape ◽  
Beam Sputtering ◽  
Optical Emission Spectra ◽  
Optical Fiber Bundle

ABSTRACTThe optical emission spectra resulting from ion beam sputtering a SrTiO3 target were observed as a function of position. A collimated optical fiber bundle parallel to the plane of die sputter target was translated vertically and horizontally to spectroscopically profile the sputter process. Three different angles of incidence of the beam to die target were examined for evidence of bombardment of candidate substrate positions by undesirable species. When the ion beam was at normal incidence to the target or 22.5* from normal incidence the Ar and O contours were of similar shape. However, when die target was inclined at an angle of 45* to die incident ion beam die O contours deviated markedly. Under these conditions it appears that there is a substantial oxygen flux in a direction normal to die target surface. Under these conditions die placement of a substrate facing die sputter target would probably result in undesirable bombardment of die growing film by energetic oxygen.

Optical Spectroscopic Profiling of Ion Beam Sputtering

1991 ◽  
Vol 223 ◽  
Author(s):  
J. D. Klein ◽  
A. Yen
Keyword(s):  
Fiber Bundle ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Emission Spectra ◽  
Incident Beam ◽  
Optical Emission ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Optical Emission Spectra ◽  
Optical Fiber Bundle

ABSTRACTThe optical emission spectra resulting from ion beam sputtering a BaTiO3 target were observed as a function of position. A collimated optical fiber bundle parallel to the plane of the sputter target was translated vertically and horizontally to spectroscopically profile the sputter process. The Ar contours provide an image of the incident beam and its distortion by the presence of the target. Comparison of the Ar and O contours indicate that the oxygen atmosphere in the vicinity of the target is determined by sputtering events as well as the incident beam. The shapes of the Ba and Ti contours are elliptical with some differences in intensity gradients. Comparison is made with species contours observed during rf sputtering of an Y-Ba-Cu-O target.

Novel Properties of a-SI:H Prepared by Dual Ion Beam Sputtering

1986 ◽  
Vol 70 ◽  
Author(s):  
H. Windischmann ◽  
R. W. Collins ◽  
J. M. Cavese
Keyword(s):  
Ion Beam ◽  
Target Surface ◽  
High Energy ◽  
Strong Increase ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Ir Reflectance ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Hydrogen Beam

ABSTRACTFilms of a-Si:H were deposited by dual ion beam sputtering using a new configuration in which both the argon and hydrogen beam sources are directed at the silicon target. This geometry also permits independent control of the hydrogen and argon energy and particle flux. Infrared absorption mealurents show that even for high hydrogen concentrations, the 2000 cm-1 Si-H stretching band is dominant. This result is in contrast with the more conventional configuration in which the H soyrce is directed at the substrate, resulting in films with dominant 2100 cm-1 mode. This suggests that the precursors resulting in H-incorporation are different for the two configurations. In fact, IR reflectance and SIMS analysis of the silicon sputtering target reveal hydrogen is incorporated, peaking at about 30 Å below the target surface. A strong increase in the photo and dark dc conductivity occurs as the hydrogen ion enery is reduced below 30 eV, suggesting the importance of preventing high energy back-scattered H ion bombardment of thS film. At a H ion energy of 8eV, the values are 2x10-5 (AM1) and 2x10-9 (ohm-cm-1), respectively. Spectroscopic ellipsometry measurements of films reveal a Si-Si bond packing greater than that of low Hcontent a-Si prepared by LPCVD even up to H contents as high as 24%. Above 25% a microstructural transition is observed, verified by SEM, resulting in an increase in the density of voids, (which appears to be responsible for a sudden drop in the hydrogen-induced compressive stress) and accompanied by a shift in the dominant stretching mode energy.

Optical Spectroscopic Profiling of Off-Axis Rf Sputtering

1991 ◽  
Vol 243 ◽  
Author(s):  
J. D. Klein ◽  
A. Yen
Keyword(s):  
Rf Sputtering ◽  
Emission Spectra ◽  
Optical Emission ◽  
Lattice Parameter ◽  
Index Of Refraction ◽  
Chamber Pressure ◽  
Sapphire Substrates ◽  
Optical Emission Spectra ◽  
Optical Fiber Bundle ◽  
Deposition Position

AbstractThe optical emission spectra resulting from if magnetron sputtering a BaTiO3 target were observed to survey substrate position implications. A collimated optical fiber bundle parallel to the plane of the sputter target was translated vertically and horizontally to spectroscopically profile the sputter process. The resulting Ar, O, Ba, and Ti emission intensity contours and the O/Ba and Ba/Ti intensity ratio contours suggest substrate positions that should provide uniform undistorted films. Films deposited on sapphire substrates were found to differ in orientation, lattice parameter, and index of refraction. The optimum offaxis deposition position shifted as the chamber pressure was varied.

scholarly journals Plasma properties of a laser-ablated aluminum target in air

2003 ◽  
Vol 21 (1) ◽  
pp. 97-101 ◽  
Author(s):  
MINJU YING ◽  
YUEYUAN XIA ◽  
YUMING SUN ◽  
MINGWEN ZHAO ◽  
YUCHEN MA ◽  
...  
Keyword(s):  
Emission Spectra ◽  
Optical Emission ◽  
Target Surface ◽  
Emission Lines ◽  
Laser Irradiance ◽  
Air Plasma ◽  
Plasma Properties ◽  
Spatially Resolved ◽  
Avalanche Process ◽  
Optical Emission Spectra

The optical emission spectra of the plasma generated by a 1.06-μm Nd:YAG laser irradiation of Al target in air was recorded and analyzed in a spatially resolved manner. Electron temperatures and densities in the plasma were obtained using the relative emission intensities and the Stark-broadened linewidths of Al(I) emission lines, respectively. The dependence of the electron density and temperature on the distance from the target surface and on the laser irradiance were manifested. We also discussed how the air takes part in the plasma evolution process and confirmed that the ignition of the air plasma was by the collisions between the energetic electrons and the nitrogen atoms through a cascade avalanche process.

scholarly journals Investigation of the process of reactive ion-beam sputtering of gallium arsenide using optical emission spectroscopy

Doklady BGUIR ◽  
2021 ◽  
Vol 19 (1) ◽  
pp. 5-10
Author(s):  
E. V. Тelesh
Keyword(s):  
Gallium Arsenide ◽  
Chemical Interaction ◽  
Ion Beam ◽  
Optical Emission ◽  
Ion Source ◽  
Pure Oxygen ◽  
Ion Beam Sputtering ◽  
Positive Potential ◽  
Emission Analysis ◽  
Beam Sputtering

The aim of this work was to study the process of reactive ion-beam sputtering of gallium arsenide using optical emission analysis of plasma in the target region to determine the optimal conditions for the formation of intrinsic GaAs oxides. The ion source was a plasmatron based on an anode layer accelerator (UAS), which generated a stream of accelerated argon and oxygen ions with an energy of 400–1200 eV. The target was made from tellurium doped gallium arsenide. Intense GaI lines (2874.2 Å, 2943.6 Å, 4033.0 Å and 4172.1 Å), atomic argon ArI, argon ions, and also FeI lines were detected in the spectrum upon sputtering of GaAs by Ar+ ions. The appearance of iron lines can be explained by the sputtering of the pole tips of the magnetic system of the ion source. An increase in the accelerating voltage from 1 to 3 kV leads to an increase in the intensity of the peaks of atomic gallium GaI (4172.1 Å) by 2.38 times, the GaI line (4033.0 Å) by 3.25 times, the GaI line (2943.6 Å) 3.4 times, GaI lines (2874.2 Å) 5 times. It was found that an increase in the partial pressure of oxygen leads to a sharp decrease in the peaks of GaI (4033.0 Å) and GaI (4172.1 Å) due to the chemical interaction of gallium and oxygen. Sputtering in pure oxygen reduces the intensity of these peaks by 8 and 5 times, respectively. The intensities of the peaks of atomic gallium GaI (2874.2 Å) and GaI (2943.6 Å) decreased in 2 and 1.78 times, respectively. In the presence of a positive potential on the target, the intensity of all lines of atomic gallium monotonically decreases with increasing potential. In the emission spectrum, lines of atomic oxygen OI (7774.2 Å) and molecular positive ions O+2 (6418.7 Å, 6026.4 Å, 5631.9 Å and 5295.7 Å) were detected. In the presence of a positive potential on the target, a monotonic decrease in the intensity of the above oxygen lines was observed. This indicates an intensification of chemical interaction of oxygen with target elements and, accordingly, a decrease in the free active oxygen particles.

Optical Monitoring of Y-Ba-Cu-O Ion Beam Sputtering

1990 ◽  
Vol 201 ◽  
Author(s):  
J.D. Klein ◽  
A. Yen
Keyword(s):  
Ion Beam ◽  
Emission Spectra ◽  
Optical Monitoring ◽  
Ion Beam Sputtering ◽  
Beam Voltage ◽  
Multichannel Analyser ◽  
Beam Sputtering

AbstractEmission spectra resulting from ion beam sputtering an Y-Ba-Cu-O target were observed as a function of beam voltage and time using an optical multichannel analyser. The observed spectra were clean with several peaks attributed to each of Y, Ba, and Ar. A well defined O peak and a weak CuO peak were available for comparison. The intensities of the cation peaks were linear with respect to beam voltage above 450 V. Presputtering of a previously stored target was characterized by the diminishment of an initially large H peak as the cation peaks emerged.

Interplay between Morphology and Surface Transport in Nanopatterns Produced by Ion-Beam Sputtering

2007 ◽  
Vol 1059 ◽  
Author(s):  
Rodolfo Cuerno ◽  
Javier Muñoz-García ◽  
Mario Castro ◽  
Raúl Gago ◽  
Luis Vázquez
Keyword(s):  
Ion Beam ◽  
Sand Dunes ◽  
Normal Incidence ◽  
Transverse Motion ◽  
Ion Beam Sputtering ◽  
Coarsening Behavior ◽  
Beam Sputtering ◽  
Nonlinear Features ◽  
Ripple Patterns ◽  
Hexagonally Ordered

ABSTRACTA “hydrodynamic” model has been proposed to describe nanopattern formation and dynamics on amorphous surfaces eroded by ion-beam sputtering (IBS), that relates to descriptions of pattern formation in macroscopic systems such as aeolian sand dunes. At variance with previous continuum models of the morphology of ion-sputtered surfaces, the dynamics of the species that diffuse along the surface is coupled in a natural way to that of the surface height. We report recent results for this model, considering normal and oblique ion incidence, for both fixed and rotating targets, and include comparison to recent experiments on silicon. Effective interface equations can be obtained, that generalize the anisotropic Kuramoto-Sivashinshy equation through additional conserved Kardar-Parisi-Zhang type nonlinear terms. In general dot or ripple patterns form, that later evolve exhibiting complex nonlinear dynamics. Thus, we observe interrupted coarsening behavior such that, for normal incidence, domains of hexagonally ordered structures appear, that compare favorably with those obtained in many experiments of nanodot formation by IBS. In other parameter regions, this short-range ordered patterns coexist with long range disorder and kinetic roughening. For oblique incidence, a ripple pattern is generically obtained that also shows interrupted coarsening and other nonlinear features like non-uniform transverse motion, again reproducing experimental observations.

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