Orientation-dependent ion beam sputtering at normal incidence conditions in FeSiAl alloy

2010 ◽  
Vol 28 (4) ◽  
pp. 741-744 ◽  
Author(s):  
Barbara Šetina Batič ◽  
Monika Jenko
1991 ◽  
Vol 235 ◽  
Author(s):  
J. D. Klein ◽  
A. Yen

ABSTRACTThe optical emission spectra resulting from ion beam sputtering a SrTiO3 target were observed as a function of position. A collimated optical fiber bundle parallel to the plane of die sputter target was translated vertically and horizontally to spectroscopically profile the sputter process. Three different angles of incidence of the beam to die target were examined for evidence of bombardment of candidate substrate positions by undesirable species. When the ion beam was at normal incidence to the target or 22.5* from normal incidence the Ar and O contours were of similar shape. However, when die target was inclined at an angle of 45* to die incident ion beam die O contours deviated markedly. Under these conditions it appears that there is a substantial oxygen flux in a direction normal to die target surface. Under these conditions die placement of a substrate facing die sputter target would probably result in undesirable bombardment of die growing film by energetic oxygen.


2007 ◽  
Vol 1059 ◽  
Author(s):  
Rodolfo Cuerno ◽  
Javier Muñoz-García ◽  
Mario Castro ◽  
Raúl Gago ◽  
Luis Vázquez

ABSTRACTA “hydrodynamic” model has been proposed to describe nanopattern formation and dynamics on amorphous surfaces eroded by ion-beam sputtering (IBS), that relates to descriptions of pattern formation in macroscopic systems such as aeolian sand dunes. At variance with previous continuum models of the morphology of ion-sputtered surfaces, the dynamics of the species that diffuse along the surface is coupled in a natural way to that of the surface height. We report recent results for this model, considering normal and oblique ion incidence, for both fixed and rotating targets, and include comparison to recent experiments on silicon. Effective interface equations can be obtained, that generalize the anisotropic Kuramoto-Sivashinshy equation through additional conserved Kardar-Parisi-Zhang type nonlinear terms. In general dot or ripple patterns form, that later evolve exhibiting complex nonlinear dynamics. Thus, we observe interrupted coarsening behavior such that, for normal incidence, domains of hexagonally ordered structures appear, that compare favorably with those obtained in many experiments of nanodot formation by IBS. In other parameter regions, this short-range ordered patterns coexist with long range disorder and kinetic roughening. For oblique incidence, a ripple pattern is generically obtained that also shows interrupted coarsening and other nonlinear features like non-uniform transverse motion, again reproducing experimental observations.


Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.


Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.


2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.


2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.


1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO

1988 ◽  
Vol 23 (8) ◽  
pp. 3026-3030 ◽  
Author(s):  
Takeyuki Suzuki ◽  
Tsutomu Yamazaki ◽  
Harunobu Oda

2019 ◽  
Vol 682 ◽  
pp. 109-120 ◽  
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Marco Jupé ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
...  

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