Optical Spectroscopic Profiling of Ion Beam Sputtering

1991 ◽  
Vol 223 ◽  
Author(s):  
J. D. Klein ◽  
A. Yen
Keyword(s):  
Fiber Bundle ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Emission Spectra ◽  
Incident Beam ◽  
Optical Emission ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Optical Emission Spectra ◽  
Optical Fiber Bundle

ABSTRACTThe optical emission spectra resulting from ion beam sputtering a BaTiO3 target were observed as a function of position. A collimated optical fiber bundle parallel to the plane of the sputter target was translated vertically and horizontally to spectroscopically profile the sputter process. The Ar contours provide an image of the incident beam and its distortion by the presence of the target. Comparison of the Ar and O contours indicate that the oxygen atmosphere in the vicinity of the target is determined by sputtering events as well as the incident beam. The shapes of the Ba and Ti contours are elliptical with some differences in intensity gradients. Comparison is made with species contours observed during rf sputtering of an Y-Ba-Cu-O target.

Examination of Ion Beam-Target Angle Effects by Optical Spectroscopic Profiling

1991 ◽  
Vol 235 ◽  
Author(s):  
J. D. Klein ◽  
A. Yen
Keyword(s):  
Ion Beam ◽  
Emission Spectra ◽  
Optical Emission ◽  
Target Surface ◽  
Normal Incidence ◽  
Ion Beam Sputtering ◽  
Similar Shape ◽  
Beam Sputtering ◽  
Optical Emission Spectra ◽  
Optical Fiber Bundle

ABSTRACTThe optical emission spectra resulting from ion beam sputtering a SrTiO3 target were observed as a function of position. A collimated optical fiber bundle parallel to the plane of die sputter target was translated vertically and horizontally to spectroscopically profile the sputter process. Three different angles of incidence of the beam to die target were examined for evidence of bombardment of candidate substrate positions by undesirable species. When the ion beam was at normal incidence to the target or 22.5* from normal incidence the Ar and O contours were of similar shape. However, when die target was inclined at an angle of 45* to die incident ion beam die O contours deviated markedly. Under these conditions it appears that there is a substantial oxygen flux in a direction normal to die target surface. Under these conditions die placement of a substrate facing die sputter target would probably result in undesirable bombardment of die growing film by energetic oxygen.

Optical Spectroscopic Profiling of Off-Axis Rf Sputtering

1991 ◽  
Vol 243 ◽  
Author(s):  
J. D. Klein ◽  
A. Yen
Keyword(s):  
Rf Sputtering ◽  
Emission Spectra ◽  
Optical Emission ◽  
Lattice Parameter ◽  
Index Of Refraction ◽  
Chamber Pressure ◽  
Sapphire Substrates ◽  
Optical Emission Spectra ◽  
Optical Fiber Bundle ◽  
Deposition Position

AbstractThe optical emission spectra resulting from if magnetron sputtering a BaTiO3 target were observed to survey substrate position implications. A collimated optical fiber bundle parallel to the plane of the sputter target was translated vertically and horizontally to spectroscopically profile the sputter process. The resulting Ar, O, Ba, and Ti emission intensity contours and the O/Ba and Ba/Ti intensity ratio contours suggest substrate positions that should provide uniform undistorted films. Films deposited on sapphire substrates were found to differ in orientation, lattice parameter, and index of refraction. The optimum offaxis deposition position shifted as the chamber pressure was varied.

scholarly journals Investigation of the process of reactive ion-beam sputtering of gallium arsenide using optical emission spectroscopy

Doklady BGUIR ◽  
2021 ◽  
Vol 19 (1) ◽  
pp. 5-10
Author(s):  
E. V. Тelesh
Keyword(s):  
Gallium Arsenide ◽  
Chemical Interaction ◽  
Ion Beam ◽  
Optical Emission ◽  
Ion Source ◽  
Pure Oxygen ◽  
Ion Beam Sputtering ◽  
Positive Potential ◽  
Emission Analysis ◽  
Beam Sputtering

The aim of this work was to study the process of reactive ion-beam sputtering of gallium arsenide using optical emission analysis of plasma in the target region to determine the optimal conditions for the formation of intrinsic GaAs oxides. The ion source was a plasmatron based on an anode layer accelerator (UAS), which generated a stream of accelerated argon and oxygen ions with an energy of 400–1200 eV. The target was made from tellurium doped gallium arsenide. Intense GaI lines (2874.2 Å, 2943.6 Å, 4033.0 Å and 4172.1 Å), atomic argon ArI, argon ions, and also FeI lines were detected in the spectrum upon sputtering of GaAs by Ar+ ions. The appearance of iron lines can be explained by the sputtering of the pole tips of the magnetic system of the ion source. An increase in the accelerating voltage from 1 to 3 kV leads to an increase in the intensity of the peaks of atomic gallium GaI (4172.1 Å) by 2.38 times, the GaI line (4033.0 Å) by 3.25 times, the GaI line (2943.6 Å) 3.4 times, GaI lines (2874.2 Å) 5 times. It was found that an increase in the partial pressure of oxygen leads to a sharp decrease in the peaks of GaI (4033.0 Å) and GaI (4172.1 Å) due to the chemical interaction of gallium and oxygen. Sputtering in pure oxygen reduces the intensity of these peaks by 8 and 5 times, respectively. The intensities of the peaks of atomic gallium GaI (2874.2 Å) and GaI (2943.6 Å) decreased in 2 and 1.78 times, respectively. In the presence of a positive potential on the target, the intensity of all lines of atomic gallium monotonically decreases with increasing potential. In the emission spectrum, lines of atomic oxygen OI (7774.2 Å) and molecular positive ions O+2 (6418.7 Å, 6026.4 Å, 5631.9 Å and 5295.7 Å) were detected. In the presence of a positive potential on the target, a monotonic decrease in the intensity of the above oxygen lines was observed. This indicates an intensification of chemical interaction of oxygen with target elements and, accordingly, a decrease in the free active oxygen particles.

scholarly journals 3-D SRIM Simulation of Focused Ion Beam Sputtering with an Application-Oriented Incident Beam Model

2019 ◽  
Vol 9 (23) ◽  
pp. 5133 ◽  
Author(s):  
Lirong Zhao ◽  
Yimin Cui ◽  
Wenping Li ◽  
Wajid Ali Khan ◽  
Yutian Ma
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Incident Beam ◽  
Coulomb Repulsion ◽  
Ion Source ◽  
Material Surface ◽  
Thermal Source ◽  
Beam Model ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Ion beam sputter etching has been widely used in material surface modification and transmission electron microscope (TEM) sample preparation. Due to the complexity of the ion beam etching process, the quantitative simulation of ion beam sputtering is necessary to guarantee precision in surface treatment and sculpting under different energies and beam currents. In this paper, an application-oriented incident ion beam model was first built with aberrations and Coulomb repulsion forces being considered from the Ga ion source to the sample. The sputtering process of this model on the sample was then analyzed and simulated with an improved stopping and range of ions in matter (SRIM) program. The sputtering performance of this model, the point-like incident beam and the typical Gaussian incident beam was given in the end. Results show that the penetration depth of Ga ions having 30 keV energy in silicon is 28 nm and the radial range is 29.6 nm with 50 pA beam current. The application-oriented model has been verified by our focused ion beam-scanning electron microscopy (FIB-SEM) milling experiment and it will be a potential thermal source in simulating the process of FIB bombarding organic samples.

Etching of red blood cells by means of ion beam sputtering

1978 ◽  
Vol 36 (2) ◽  
pp. 38-39
Author(s):  
Kiichi Hojou ◽  
Hiroshi Fujita ◽  
Masamichi Ito ◽  
Tetsuyuki Hirahata ◽  
Koichi Kanaya
Keyword(s):  
Red Blood Cells ◽  
Blood Cells ◽  
Ion Beam ◽  
Cell Structure ◽  
Rf Sputtering ◽  
Etching Process ◽  
Ion Beam Sputtering ◽  
Ion Etching ◽  
Ion Beam Etching ◽  
Beam Sputtering

Ion etching techniques have recently been utilized in attempts to reveal subsurface cell structure in the scanning electro microscope. There has, however,been some difficulties indistingushing infracellar structure from artifacts and comtamination produced by the ion etching process.In order to avoid thermal defects caused by conventional etching processes of DC- or rf-sputtering ion beam etching can be used to study biological specimens. In this case, and in addition to using an ion beam which is well- collimated and highly accelerated, the specimen must be both cooled and rotated during processing. Using this procedure on red blood cells examined by SEM, details of their structure were revealed. However, the cone-like structures reported by several previous investigators were not consistantly observed.It is concluded that this procedure for etching may be more informative than those obtained by other ion etching processes.

Optical Monitoring of Y-Ba-Cu-O Ion Beam Sputtering

1990 ◽  
Vol 201 ◽  
Author(s):  
J.D. Klein ◽  
A. Yen
Keyword(s):  
Ion Beam ◽  
Emission Spectra ◽  
Optical Monitoring ◽  
Ion Beam Sputtering ◽  
Beam Voltage ◽  
Multichannel Analyser ◽  
Beam Sputtering

AbstractEmission spectra resulting from ion beam sputtering an Y-Ba-Cu-O target were observed as a function of beam voltage and time using an optical multichannel analyser. The observed spectra were clean with several peaks attributed to each of Y, Ba, and Ar. A well defined O peak and a weak CuO peak were available for comparison. The intensities of the cation peaks were linear with respect to beam voltage above 450 V. Presputtering of a previously stored target was characterized by the diminishment of an initially large H peak as the cation peaks emerged.

Effects of O2 Ion Bombardment of Y-Ba-Cu-Oxide during Thin Film Growth

1989 ◽  
Vol 157 ◽  
Author(s):  
G. Metzger ◽  
C. B. Fleddermann
Keyword(s):  
Oxygen Content ◽  
Film Growth ◽  
Ion Beam ◽  
Optical Emission ◽  
Beam Current ◽  
Ion Beam Sputtering ◽  
Low Oxygen ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Direct Incorporation

ABSTRACTOxygen ion beam bombardment has been studied as a means for incorporating oxygen into thin films of Y-Ba-Cu-oxide either by enhancing the transport of oxygen to substrates during ion-beam sputtering, or by direct incorporation of oxygen with ion-assisted deposition. Optical emission spectroscopy was used to study the ion-beam bombardment of bulk superconducting targets as the oxygen content of the ion beam was varied. This study showed that oxygen did not directly combine with metallic elements in the target to increase the oxygen content of the stream of particles moving toward the substrate. Addition of a second ion beam directing oxygen ions toward the substrate during film growth caused large variations in the stoichiometry of the deposited films. At low oxygen ion currents, no increase in the oxygen content of the films was detected, while at relatively high currents, the oxygen incorporation increased. However, the sputtering of the metallic components of the film increased as the oxygen beam current increased, leading to very low growth rates.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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