Interface Resolution in Auger Depth Profiling

1986 ◽  
Vol 69 ◽  
Author(s):  
D. Coulman ◽  
A. Turner
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Negligible Effect ◽  
The Other ◽  
Angle Of Incidence ◽  
Ion Beam Mixing ◽  
Sample Rotation ◽  
Preferential Sputtering ◽  
Cone Formation ◽  
Minor Improvement

AbstractIt has been well established that sputtering artifacts such as ion beam mixing, preferential sputtering and cone formation ultimately limit interface resolution in Auger and ESCA depth profiling. We have conducted a comparision of the effect of sample rotation, and of the angle of incidence of the ion beam using one and two ion guns on interface resolution. Our investigation has concentrated on the interface resolution and detection of impurities at the various interfaces of a typical semiconductor metallization scheme [Al 700 nm/ TiW 100 nm/ Si02 100 nm/Si]. We have determined that in going from a standard sputtering geometry of a 67 degree tilt from the surface normal to 80 degrees one obtains a factor of five improvement in interface resolution. Sample rotation, on the other hand, was found to improve interface resolution by a factor of two at 67 degrees and to result in minor improvement at 80 degrees. The effect of two ion guns was found to have a negligible effect on the samples studied.

Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

1991 ◽  
Vol 240 ◽  
Author(s):  
H. S. LEE ◽  
R. T. Lareau ◽  
S. N. Schauer ◽  
R. P. Moerkirk ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
High Concentration ◽  
Ohmic Behavior ◽  
Preferential Sputtering ◽  
Specific Contact ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.

Anisotropic Damage Production at ION Irradiated GaAs/AlAs Interfaces

1991 ◽  
Vol 235 ◽  
Author(s):  
J. L. Klatt ◽  
J. Alwan ◽  
J. J. Coleman ◽  
R. S. Averback
Keyword(s):  
Ion Beam ◽  
Damage Zone ◽  
Rutherford Backscattering ◽  
The Other ◽  
Anisotropic Damage ◽  
Ion Beam Mixing ◽  
Alas Layer ◽  
Metallic Systems

ABSTRACTIon beam mixing and damage production at GaAs-AlAs interfaces was studied by Rutherford backscattering and channeling methods. It was observed that the general features of the intermixing of GaAs with AlAs at 100K are typical of that in other semiconductor and metallic systems but that the damage production is not. The GaAs layers amorphize at a very low ion dose whereas the AlAs layers are very resistant to amorphization. Damage in the AlAs begins at one interface of the GaAs and grows through the AlAs layer, but damage at the other interface never nucleates. The ratio of nuclear to electronic stopping influences the growth of the damage zone.

The Effects of Ion Beam Mixing on Rapid Thermal Annealed Ohmic Contacts to N-GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
Seemi Kazmi ◽  
Roman V. Kruzelecky ◽  
David A. Thompson
Keyword(s):  
Surface Morphology ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Specific Contact Resistance ◽  
Ion Beam Mixing ◽  
Specific Contact

ABSTRACTNi/Ge/Au and Ni/Ge/Pd contacts have been made on 1018 cm-3 n-type GaAs. The contacts were subjected to ion beam mixing through the metallization using 70-130 keV Se+ ions and subsequently subjected to rapid thermal annealing (RTA). These are compared with unimplanted contacts produced by RTA techniques on the same substrate. The specific contact resistance ,pc, has been measured for the two systems. In addition, the contacts have been studied using Auger depth profiling and SEM studies have been used to determine surface morphology. Values of pc ∽ 10-6 -10-7 ohm-cm2 have been measured. It is observed that ion beam mixing or the addition of a Ti overlayer (to the Ni/Ge/Au) improves the contact morphology.

scholarly journals Influence of C60 Ion Beam Angle of Incidence Upon XPS Depth Profiling for Polymers

Hyomen Kagaku ◽  
2007 ◽  
Vol 28 (9) ◽  
pp. 504-508 ◽  
Author(s):  
Takuya MIYAYAMA ◽  
Risayo INOUE ◽  
Noriaki SANADA
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Angle Of Incidence ◽  
Beam Angle

scholarly journals Hybrid Perovskites Depth Profiling with Variable-Size Argon Clusters and Monatomic Ions Beams

Materials ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 726 ◽  
Author(s):  
Céline Noël ◽  
Sara Pescetelli ◽  
Antonio Agresti ◽  
Alexis Franquet ◽  
Valentina Spampinato ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Molecules ◽  
Ion Beam ◽  
Perovskite Solar Cells ◽  
Depth Profiling ◽  
Inorganic Materials ◽  
Variable Size ◽  
Preferential Sputtering ◽  
Argon Clusters ◽  
Molecular Profiles

Ion beam depth profiling is increasingly used to investigate layers and interfaces in complex multilayered devices, including solar cells. This approach is particularly challenging on hybrid perovskite layers and perovskite solar cells because of the presence of organic/inorganic interfaces requiring the fine optimization of the sputtering beam conditions. The ion beam sputtering must ensure a viable sputtering rate on hard inorganic materials while limiting the chemical (fragmentation), compositional (preferential sputtering) or topographical (roughening and intermixing) modifications on soft organic layers. In this work, model (Csx(MA0.17FA0.83)100−xPb(I0.83Br0.17)3/cTiO2/Glass) samples and full mesoscopic perovskite solar cells are profiled using low-energy (500 and 1000 eV) monatomic beams (Ar+ and Cs+) and variable-size argon clusters (Arn+, 75 < n < 4000) with energy up to 20 keV. The ion beam conditions are optimized by systematically comparing the sputtering rates and the surface modifications associated with each sputtering beam. X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and in-situ scanning probe microscopy are combined to characterize the interfaces and evidence sputtering-related artifacts. Within monatomic beams, 500 eV Cs+ results in the most intense and stable ToF-SIMS molecular profiles, almost material-independent sputtering rates and sharp interfaces. Large argon clusters (n > 500) with insufficient energy (E < 10 keV) result in the preferential sputtering of organic molecules and are highly ineffective to sputter small metal clusters (Pb and Au), which tend to artificially accumulate during the depth profile. This is not the case for the optimized cluster ions having a few hundred argon atoms (300 < n < 500) and an energy-per-atom value of at least 20 eV. In these conditions, we obtain (i) the low fragmentation of organic molecules, (ii) convenient erosion rates on soft and hard layers (but still different), and (iii) constant molecular profiles in the perovskite layer, i.e., no accumulation of damages.

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

3D Observation of Elemental Distribution of Si-Device using a Dedicated FIB/STEM System

2005 ◽  
Author(s):  
T. Yaguchi ◽  
M. Konno ◽  
T. Kamino ◽  
M. Ogasawara ◽  
K. Kaji ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Elemental Distribution ◽  
Multivariate Statistical ◽  
X Ray ◽  
Sample Rotation ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Elemental Maps

Abstract A technique for preparation of a pillar shaped sample and its multi-directional observation of the sample using a focused ion beam (FIB) / scanning transmission electron microscopy (STEM) system has been developed. The system employs an FIB/STEM compatible sample rotation holder with a specially designed rotation mechanism, which allows the sample to be rotated 360 degrees [1-3]. This technique was used for the three dimensional (3D) elemental mapping of a contact plug of a Si device in 90 nm technology. A specimen containing a contact plug was shaped to a pillar sample with a cross section of 200 nm x 200 nm and a 5 um length. Elemental analysis was performed with a 200 kV HD-2300 STEM equipped with the EDAX genesis Energy dispersive X-ray spectroscopy (EDX) system. Spectrum imaging combined with multivariate statistical analysis (MSA) [4, 5] was used to enhance the weak X-ray signals of the doped area, which contain a low concentration of As-K. The distributions of elements, especially the dopant As, were successfully enhanced by MSA. The elemental maps were .. reconstructed from the maps.

Sign in / Sign up

Export Citation Format

Share Document