Formation of A Buried Stacked Insulator by Ion Beam Synthesis

1991 ◽  
Vol 235 ◽  
Author(s):  
W. Skorupa ◽  
R. Grotzschel ◽  
K. Wollschlagbr ◽  
J. Albrbcht ◽  
H. Vohse
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Ion Beam ◽  
Silicon Oxynitride ◽  
Experimental Results ◽  
Compound Formation ◽  
Combined Nitrogen ◽  
Oxygen Implantation ◽  
New Type ◽  
Impurity Profiles

ABSTRACTWe report on the formation and properties of a new type of a buried insulator using combined nitrogen/oxygen implantation with two different implantation energies. In this manner, a stacked layer consisting of silicon dioxide above silicon oxynitride above silicon nitride is formed. Experimental results concerning the impurity profiles, the microstructure and compound formation are presented.

Compositional Determination of Silicon Oxynitride Films

1986 ◽  
Vol 77 ◽  
Author(s):  
Kenneth S. Hatton ◽  
John B. Wachtman ◽  
Richard A. Haber ◽  
Barry Wilkens
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Simple Model ◽  
Silicon Dioxide ◽  
Silicon Oxynitride ◽  
Experimental Results ◽  
Film Composition ◽  
Reactive Gases ◽  
Tie Line

ABSTRACTSilicon oxynitride thin films made by RF reactive sputtering can be made with varying composition along the silicon dioxide - silicon nitride tie line by control of the sputtering gases. Compositional determination was made by the Rutherford backscattering technique. A simple model relating film composition to the composition of the reactive gases is proposed which fits the experimental results.

scholarly journals Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 136
Author(s):  
Yiingqi Shang ◽  
Hongquan Zhang ◽  
Yan Zhang
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Wet Etching ◽  
Silicon Dioxide Layer ◽  
Etching Depth ◽  
Deep Cavity ◽  
Mask Layer ◽  
Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

2001 ◽  
Vol 19 (5) ◽  
pp. 2542-2548 ◽  
Author(s):  
M. P. Tsang ◽  
C. W. Ong ◽  
N. Chong ◽  
C. L. Choy ◽  
P. K. Lim ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Silicon Nitride Films ◽  
Free Silicon

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

Reaction ergodography for silicon nitride bond formation by the nitridation of silicon dioxide

1992 ◽  
Vol 96 (7) ◽  
pp. 3029-3033 ◽  
Author(s):  
Akitomo Tachibana ◽  
Yuzuru Kurosaki ◽  
Hiroyuki Fueno ◽  
Toshiaki Sera ◽  
Tokio Yamabe
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Bond Formation
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