Compositional Determination of Silicon Oxynitride Films

1986 ◽  
Vol 77 ◽  
Author(s):  
Kenneth S. Hatton ◽  
John B. Wachtman ◽  
Richard A. Haber ◽  
Barry Wilkens
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Simple Model ◽  
Silicon Dioxide ◽  
Silicon Oxynitride ◽  
Experimental Results ◽  
Film Composition ◽  
Reactive Gases ◽  
Tie Line

ABSTRACTSilicon oxynitride thin films made by RF reactive sputtering can be made with varying composition along the silicon dioxide - silicon nitride tie line by control of the sputtering gases. Compositional determination was made by the Rutherford backscattering technique. A simple model relating film composition to the composition of the reactive gases is proposed which fits the experimental results.

Formation of A Buried Stacked Insulator by Ion Beam Synthesis

1991 ◽  
Vol 235 ◽  
Author(s):  
W. Skorupa ◽  
R. Grotzschel ◽  
K. Wollschlagbr ◽  
J. Albrbcht ◽  
H. Vohse
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Ion Beam ◽  
Silicon Oxynitride ◽  
Experimental Results ◽  
Compound Formation ◽  
Combined Nitrogen ◽  
Oxygen Implantation ◽  
New Type ◽  
Impurity Profiles

ABSTRACTWe report on the formation and properties of a new type of a buried insulator using combined nitrogen/oxygen implantation with two different implantation energies. In this manner, a stacked layer consisting of silicon dioxide above silicon oxynitride above silicon nitride is formed. Experimental results concerning the impurity profiles, the microstructure and compound formation are presented.

scholarly journals Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Surfaces ◽  
2018 ◽  
Vol 1 (1) ◽  
pp. 59-72 ◽  
Author(s):  
Zhenghao Gan ◽  
Changzheng Wang ◽  
Zhong Chen
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Nitride ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Flow Rates ◽  
Silicon Nitride Films

Silicon nitride and silicon oxynitride thin films are widely used in microelectronic fabrication and microelectromechanical systems (MEMS). Their mechanical properties are important for MEMS structures; however, these properties are rarely reported, particularly the fracture toughness of these films. In this study, silicon nitride and silicon oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) under different silane flow rates. The silicon nitride films consisted of mixed amorphous and crystalline Si3N4 phases under the range of silane flow rates investigated in the current study, while the crystallinity increased with silane flow rate in the silicon oxynitride films. The Young’s modulus and hardness of silicon nitride films decreased with increasing silane flow rate. However, for silicon oxynitride films, Young’s modulus decreased slightly with increasing silane flow rate, and the hardness increased considerably due to the formation of a crystalline silicon nitride phase at the high flow rate. Overall, the hardness, Young modulus, and fracture toughness of the silicon nitride films were greater than the ones of silicon oxynitride films, and the main reason lies with the phase composition: the SiNx films were composed of a crystalline Si3N4 phase, while the SiOxNy films were dominated by amorphous Si–O phases. Based on the overall mechanical properties, PECVD silicon nitride films are preferred for structural applications in MEMS devices.

The Determination of Elemental Composition, Thickness and Crystalline Phases in Single and Multi-Layer Thin Films

1989 ◽  
Vol 33 ◽  
pp. 197-204
Author(s):  
R. A. Brown ◽  
K. Toda ◽  
R. L. Wilson
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Elemental Composition ◽  
Crystalline Phases ◽  
Film Composition ◽  
Layer Thin Film

The purpose of this paper is to show how XRD and XRF can be used as complimentary tools to determine multi-layer thin film composition, both elemental and crystalline, as well as film thickness.

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