Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

2001 ◽  
Vol 19 (5) ◽  
pp. 2542-2548 ◽  
Author(s):  
M. P. Tsang ◽  
C. W. Ong ◽  
N. Chong ◽  
C. L. Choy ◽  
P. K. Lim ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Silicon Nitride Films ◽  
Free Silicon

Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia

2002 ◽  
Vol 49 (9) ◽  
pp. 1526-1531 ◽  
Author(s):  
M. Tanaka ◽  
S. Saida ◽  
I. Mizushima ◽  
F. Inoue ◽  
M. Kojima ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Nitride Films ◽  
Free Silicon ◽  
Boron Penetration

In Vivo Biostability of CVD Silicon Oxide and Silicon Nitride Films

2005 ◽  
Vol 872 ◽  
Author(s):  
John M. Maloney ◽  
Sara A. Lipka ◽  
Samuel P. Baldwin
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Silicon Chips ◽  
Silicon Nitride Films

AbstractLow pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) silicon oxide and silicon nitride films were implanted subcutaneously in a rat model to study in vivo behavior of the films. Silicon chips coated with the films of interest were implanted for up to one year, and film thickness was evaluated by spectrophotometry and sectioning. Dissolution rates were estimated to be 0.33 nm/day for LPCVD silicon nitride, 2.0 nm/day for PECVD silicon nitride, and 3.5 nm/day for PECVD silicon oxide. A similar PECVD silicon oxide dissolution rate was observed on a silicon oxide / silicon nitride / silicon oxide stack that was sectioned by focused ion beam etching. These results provide a biostability reference for designing implantable microfabricated devices that feature exposed ceramic films.

Substrate Temperature Effects on Properties of Silicon Nitride Films Deposited by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
K. S. Grabowski ◽  
W. D. Coleman
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Flux Ratio ◽  
Film Structure ◽  
Atom Fraction ◽  
Silicon Nitride Films

AbstractSilicon nitride films (Si1−x,.Nx) have been deposited on silicon by simultaneous evaporation of silicon and bombardment of nitrogen ions. Films approximately 1 μm thick were deposited in an ambient nitrogen pressure of 50 μTorr. The substrate temperature (TSUB) ranged from nominally room temperature to 950° C for films with X between 0 and 0.6. Nitrogen atom fraction, X, was measured with Rutherford backscattering spectrometry (RBS). Refractive index was measured with near-IR reflection spectroscopy. Differences in film structure were measured by FT1R on the Si-N bond bending absorption mode, and by x-ray diffraction (XRD). X was found to depend upon the incident flux ratio of energetic nitrogen atoms to vapor silicon, and upon TSUB. Refractive index depends upon X and TSUB. XRD found evidence of the presence of amorphous structure, poly-crystalline silicon and (101) oriented β-Si3N4 depending on X and TSUB. The Si-N absorption signal increases with X and shows some structure at high TSUB.

Thermal Oxidation in Wet Oxygen of Reactive Ion‐Beam Sputter‐Deposited Silicon Nitride Films

1991 ◽  
Vol 138 (4) ◽  
pp. 1084-1089 ◽  
Author(s):  
A. Fourrier ◽  
A. Bosseboeuf ◽  
D. Bouchier ◽  
G. Gautherin
Keyword(s):  
Silicon Nitride ◽  
Thermal Oxidation ◽  
Ion Beam ◽  
Silicon Nitride Films ◽  
Sputter Deposited

Properties and structure of silicon nitride films synthesized by ion-beam-enhanced deposition

1991 ◽  
Vol 46 (2) ◽  
pp. 227-232 ◽  
Author(s):  
Liu Xianghuai ◽  
Yu Yuehui ◽  
Zheng Zhihong ◽  
Huang Wei ◽  
Zou Shichang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Silicon Nitride Films
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