Electronic structure and optical properties of α and β phases of silicon nitride, silicon oxynitride, and with comparison to silicon dioxide

1995 ◽  
Vol 51 (24) ◽  
pp. 17379-17389 ◽  
Author(s):  
Yong-Nian Xu ◽  
W. Y. Ching
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Silicon Oxynitride

Effects of rare earth adsorption on electronic structure and optical properties in β-Si3N4 ceramics from first principles

RSC Advances ◽  
2014 ◽  
Vol 4 (96) ◽  
pp. 53570-53574 ◽  
Author(s):  
Yin Wei ◽  
Hongjie Wang ◽  
Xuefeng Lu ◽  
Jiangbo Wen ◽  
Min Niu ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Optical Properties ◽  
Electronic Structure ◽  
Rare Earth ◽  
Silicon Nitride ◽  
Rare Earths ◽  
First Principles ◽  
Density Functional ◽  
Functional Theory ◽  
Si3n4 Ceramics

Electronic structure and optical properties of silicon nitride adsorbed by rare earths are explored by density functional theory.

Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride

2012 ◽  
Vol 51 (28) ◽  
pp. 6789 ◽  
Author(s):  
Jan Kischkat ◽  
Sven Peters ◽  
Bernd Gruska ◽  
Mykhaylo Semtsiv ◽  
Mikaela Chashnikova ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Optical Properties ◽  
Silicon Nitride ◽  
Aluminum Nitride ◽  
Aluminum Oxide ◽  
Silicon Dioxide ◽  
Mid Infrared ◽  
Infrared Optical Properties

Formation of A Buried Stacked Insulator by Ion Beam Synthesis

1991 ◽  
Vol 235 ◽  
Author(s):  
W. Skorupa ◽  
R. Grotzschel ◽  
K. Wollschlagbr ◽  
J. Albrbcht ◽  
H. Vohse
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Ion Beam ◽  
Silicon Oxynitride ◽  
Experimental Results ◽  
Compound Formation ◽  
Combined Nitrogen ◽  
Oxygen Implantation ◽  
New Type ◽  
Impurity Profiles

ABSTRACTWe report on the formation and properties of a new type of a buried insulator using combined nitrogen/oxygen implantation with two different implantation energies. In this manner, a stacked layer consisting of silicon dioxide above silicon oxynitride above silicon nitride is formed. Experimental results concerning the impurity profiles, the microstructure and compound formation are presented.

Compositional Determination of Silicon Oxynitride Films

1986 ◽  
Vol 77 ◽  
Author(s):  
Kenneth S. Hatton ◽  
John B. Wachtman ◽  
Richard A. Haber ◽  
Barry Wilkens
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Simple Model ◽  
Silicon Dioxide ◽  
Silicon Oxynitride ◽  
Experimental Results ◽  
Film Composition ◽  
Reactive Gases ◽  
Tie Line

ABSTRACTSilicon oxynitride thin films made by RF reactive sputtering can be made with varying composition along the silicon dioxide - silicon nitride tie line by control of the sputtering gases. Compositional determination was made by the Rutherford backscattering technique. A simple model relating film composition to the composition of the reactive gases is proposed which fits the experimental results.

Structural/Property Relationships for Optical Materials

1993 ◽  
Vol 329 ◽  
Author(s):  
Vivien D.
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Electronic Structure ◽  
Chemical Composition ◽  
Field Strength ◽  
Optical Materials ◽  
Site Occupancy ◽  
Laser Materials ◽  
Crystal Field Strength ◽  
The Matrix

AbstractIn this paper the relationships between the crystal structure, chemical composition and electronic structure of laser materials, and their optical properties are discussed. A brief description is given of the different laser activators and of the influence of the matrix on laser characteristics in terms of crystal field strength, symmetry, covalency and phonon frequencies. The last part of the paper lays emphasis on the means to optimize the matrix-activator properties such as control of the oxidation state and site occupancy of the activator and influence of its concentration.

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