Device Applications of Rapid Thermal Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
J. F. Gibbons ◽  
D. M. Dobkin ◽  
M. E. Greiner ◽  
J. L. Hoyt ◽  
W. G. Opyd
Keyword(s):  
Integrated Circuit ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Bipolar Technology ◽  
Device Applications ◽  
Novel Applications ◽  
Circuit Technology

ABSTRACTThe potential of rapid thermal processing for applications in silicon integrated circuit technology, silicon microwave bipolar technology and GaAs FET technology is explored.In addition, two novel applications for GaAs processing are described.

Temperature Monitoring by Ripple Pyrometry in Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
Binh Nguyenphu ◽  
Minseok Oh ◽  
Anthony T. Fiory
Keyword(s):  
Temperature Control ◽  
Integrated Circuit ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Back Side ◽  
Integrated Circuit Manufacturing ◽  
Current Trends ◽  
Processing Steps ◽  
Electrical Data

AbstractCurrent trends of silicon integrated circuit manufacturing demand better temperature control in various thermal processing steps. Rapid thermal processing (RTP) has become a key technique because its single wafer process can accommodate the reduced thermal budget requirements arising from shrinking the dimensions of devices and the trend to larger wafers. However, temperature control by conventional infrared pyrometry, which is highly dependent on wafer back side conditions, is insufficiently accurate for upcoming technologies. Lucent Technologies Inc., formerly known as AT&T Microelectronics and AT&T Bell Laboratories, has developed a powerful real-time pyrometry technique using the A/C ripple signal from heating lamps for in-situ temperature measurement. Temperature and electrical data from device wafers have been passively collected by ripple pyrometers in three RTP systems and analyzed. In this paper we report the statistical analysis of ripple temperature and electrical data from device wafers for a typical implant anneal process temperature range of 900 to 1000 °C.

Rapid Thermal Processing: A Bibliography

1985 ◽  
Vol 52 ◽  
Author(s):  
R. A. Powell ◽  
M. L. Manion
Keyword(s):  
Thermal Processing ◽  
Beam Energy ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Compound Semiconductors ◽  
Dopant Activation ◽  
Broad Beam ◽  
Device Applications ◽  
And Diffusion

ABSTRACTThis bibliography presents 342 references to work published on rapid thermal processing (RTP) from 1979 through mid-1985. A variety of broad-beam energy sources are represented, including: arc and quartz-halogen lamps, blackbody radiators, strip heaters, broadly rastered electron beams, and defocused CO2 lasers. Citations were obtained by both manual searching and searching of a commercially available computerized data base (I NSPEC). Entries are grouped under 13 topical headings: reviews, implanted dopant activation and diffusion in silicon, polycrystalline silicon, silicides and polycides, metals, dielectrics, compound semiconductors, defects and microstructure, device applications (silicon and compound semiconductors), miscellaneous applications, equipment, and modeling. Within each group, citations are arranged alphabetically by title. A full author index is provided.

Monte Carlo Simulation for Radiometric Temperature Measurement in Rapid Thermal Processing

2000 ◽  
Author(s):  
Y. H. Zhou ◽  
Y. J. Shen ◽  
Z. M. Zhang ◽  
B. K. Tsai ◽  
D. P. DeWitt
Keyword(s):  
Monte Carlo ◽  
Temperature Measurement ◽  
Integrated Circuit ◽  
Thermal Processing ◽  
Radiation Thermometry ◽  
Monte Carlo Model ◽  
Rapid Thermal Processing ◽  
Spectral Radiance ◽  
Effective Emissivity ◽  
Integrated Circuit Manufacturing

Abstract This work employs a Monte Carlo method to study the radiative process in a rapid thermal processing (RTP) furnace. A “true” effective emissivity, accounting for the directional optical properties, is defined and predicted in order to determine the wafer temperature from the measured spectral radiance temperature using light-pipe radiation thermometry. The true effective emissivity is the same as the hemispherical effective emissivity for diffuse wafers, in which case the Monte Carlo model gives the same results as the net-radiation method. Deviations exist between the hemispherical effective emissivity and the true effective emissivity for specular wafers because the effective emissivity is directional dependent. This research will help reduce the uncertainty in the temperature measurement for RTP furnaces to meet the future requirements for integrated circuit manufacturing.

Silicide Formation by Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
L.J. Chen ◽  
W. Lur ◽  
J.F. Chen ◽  
T.L. Lee ◽  
J.M. Liang
Keyword(s):  
Thermal Stability ◽  
Rare Earth ◽  
Thermal Processing ◽  
Metastable Phase ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
Vacancy Ordering ◽  
Shallow Junctions ◽  
Device Applications ◽  
Growth Formation

ABSTRACTAn overview of silicide formation by rapid thermal processing is presented. Recent progresses on device applications, phase formation, growth kinetics, thermal stability, epitaxial growth, formation of metastable phase, vacancy ordering in rare-earth silicides and Ti-based shallow junctions involving rapid thermal processing are used as examples to highlight the applications of rapid thermal processing in connection with silicide formation.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control
Sign in / Sign up

Export Citation Format

Share Document