Silicide Formation by Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
L.J. Chen ◽  
W. Lur ◽  
J.F. Chen ◽  
T.L. Lee ◽  
J.M. Liang
Keyword(s):  
Thermal Stability ◽  
Rare Earth ◽  
Thermal Processing ◽  
Metastable Phase ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
Vacancy Ordering ◽  
Shallow Junctions ◽  
Device Applications ◽  
Growth Formation

ABSTRACTAn overview of silicide formation by rapid thermal processing is presented. Recent progresses on device applications, phase formation, growth kinetics, thermal stability, epitaxial growth, formation of metastable phase, vacancy ordering in rare-earth silicides and Ti-based shallow junctions involving rapid thermal processing are used as examples to highlight the applications of rapid thermal processing in connection with silicide formation.

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

In-process control of silicide formation during rapid thermal processing

1993 ◽  
Vol 63 (1-4) ◽  
pp. 131-134 ◽  
Author(s):  
J.-M. Dilhac ◽  
C. Ganibal ◽  
N. Nolhier ◽  
P.B. Moynagh ◽  
C.P. Chew ◽  
...  
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation

A parametric study of titanium silicide formation by rapid thermal processing

1996 ◽  
Vol 11 (2) ◽  
pp. 412-421 ◽  
Author(s):  
A. V. Amorsolo ◽  
P. D. Funkenbusch ◽  
A. M. Kadin
Keyword(s):  
Sheet Resistance ◽  
Parametric Study ◽  
Thermal Processing ◽  
Annealing Temperature ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Wet Etching ◽  
Silicide Formation ◽  
Temperature Variations ◽  
Sputter Etching

A parametric study of titanium silicide formation by rapid thermal processing was conducted to determine the effects of annealing temperature (650 °C, 750 °C), annealing time (30 s, 60 s), wet etching (no HF dip, with HF dip), sputter etching (no sputter etch, with sputter etch), and annealing ambient (Ar, N2) on the completeness of conversion of 60 nm Ti on (111)-Si to C54–TiSi2 based on sheet resistance and the uniformity of the sheet resistance measurements across the entire wafer. Statistical analysis of the results showed that temperature, annealing ambient, and sputter etching had the greatest influence. Increasing the temperature and using argon gas instead of nitrogen promoted conversion of the film to C54–TiSi2. On the other hand, sputter etching retarded it. The results also indicated significant interactions among these factors. The best uniformity in sheet resistance was obtained by annealing at 750 °C without sputter etching. The different sheet resistance profiles showed gradients that were consistent with expected profile behaviors, arising from temperature variations across the wafer due to the effect of a flowing cold gas and the effects of the wafer edge and flats.

Microstructure, Stress and Electrical Properties of the Highly Stable W/P+-In0.53Ga0.47 as Ohmic Contacts

1989 ◽  
Vol 157 ◽  
Author(s):  
A. Katz ◽  
D. Maher ◽  
P.M. Thomas ◽  
B.E. Weir ◽  
W.C. Dautremont-Smith ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Specific Resistance ◽  
Rapid Thermal Processing ◽  
Sputter Deposition ◽  
Deposition Pressure ◽  
Semiconductor Interface ◽  
Excellent Thermal Stability ◽  
Maximum Value

ABSTRACTNon-alloyed refractory ohmic contacts to P+-ln0.53 Ga0.47 As layer have been fabricated using sputtered W and rapid thermal processing. These contacts showed excellent thermal stability over the temperature range of 300 to 750°C, with an abrupt and almost unreacted metal-semiconductor interface. The W film biaxial stresses were found to be strongly depended on the Ar pressure during the sputter deposition. At low Ar pressures the film were deposited with compressive stress, and became tensile at pressures higher than 7mTorr with a maximum value of about 8×l09 dyne cm2 as a result of Ar deposition pressure of 28mTorr. The W contacts to Zn doped 1×1019 cm−3 In0.53GA0.47 As film was found to be ohmic already as deposited with a minimum specific resistance of about 7.5×10−6 Ωcm−2, achieved as a result of heating at 600°C for about 30 sec.

The Control and Impact of Processing Ambient During RTP

1998 ◽  
Vol 514 ◽  
Author(s):  
Karen Maex ◽  
Eiichi Kondoh ◽  
Anne Lauwers ◽  
Muriel DePotter ◽  
Joris Prost
Keyword(s):  
Thermal Processing ◽  
Thermal Process ◽  
Rapid Thermal Processing ◽  
Process Window ◽  
Temperature Uniformity ◽  
Silicide Formation ◽  
Temperature Variations ◽  
Set Up ◽  
Interconnect Technology

ABSTRACTThe introduction of rapid thermal processing for silicide formation has triggered a lot of research to temperature uniformity and reproducibility in RTP systems. From the other side there has been the demand to make the process itself as robust as possible for temperature variations. Indeed the way the module is set up can open or close the thermal process window for silicidation. In addition to the temperature, the ambient control is to be taken into account. Although gasses are specified to a low level of contaminants, the RTP step needs to be optimized for optimal contaminant reduction. Besides, the process wafer itself can be a source of contamination. In this paper an overview will be given of the role of temperature and ambient during RTP on the silicidation processes. The effect of the wafer on ambient purity will be highlighted. It will be shown that the latter can also have an impact on other process steps in the interconnect technology.

Rapid Thermal Processing: A Bibliography

1985 ◽  
Vol 52 ◽  
Author(s):  
R. A. Powell ◽  
M. L. Manion
Keyword(s):  
Thermal Processing ◽  
Beam Energy ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Compound Semiconductors ◽  
Dopant Activation ◽  
Broad Beam ◽  
Device Applications ◽  
And Diffusion

ABSTRACTThis bibliography presents 342 references to work published on rapid thermal processing (RTP) from 1979 through mid-1985. A variety of broad-beam energy sources are represented, including: arc and quartz-halogen lamps, blackbody radiators, strip heaters, broadly rastered electron beams, and defocused CO2 lasers. Citations were obtained by both manual searching and searching of a commercially available computerized data base (I NSPEC). Entries are grouped under 13 topical headings: reviews, implanted dopant activation and diffusion in silicon, polycrystalline silicon, silicides and polycides, metals, dielectrics, compound semiconductors, defects and microstructure, device applications (silicon and compound semiconductors), miscellaneous applications, equipment, and modeling. Within each group, citations are arranged alphabetically by title. A full author index is provided.

Kinetics of platinum silicide formation during rapid thermal processing

1992 ◽  
Vol 72 (5) ◽  
pp. 1833-1836 ◽  
Author(s):  
A. K. Pant ◽  
S. P. Murarka ◽  
C. Shepard ◽  
W. Lanford
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

Formation of Shallow Junctions during Rapid Thermal Processing from Electron‐Beam Deposited Boron Sources

1996 ◽  
Vol 143 (9) ◽  
pp. 2981-2989 ◽  
Author(s):  
W. Zagozdzon‐Wosik ◽  
K. Korablev ◽  
I. Rusakova ◽  
D. Simons ◽  
J. H. Shi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Shallow Junctions
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