Monte Carlo Simulation for Radiometric Temperature Measurement in Rapid Thermal Processing

2000 ◽  
Author(s):  
Y. H. Zhou ◽  
Y. J. Shen ◽  
Z. M. Zhang ◽  
B. K. Tsai ◽  
D. P. DeWitt
Keyword(s):  
Monte Carlo ◽  
Temperature Measurement ◽  
Integrated Circuit ◽  
Thermal Processing ◽  
Radiation Thermometry ◽  
Monte Carlo Model ◽  
Rapid Thermal Processing ◽  
Spectral Radiance ◽  
Effective Emissivity ◽  
Integrated Circuit Manufacturing

Abstract This work employs a Monte Carlo method to study the radiative process in a rapid thermal processing (RTP) furnace. A “true” effective emissivity, accounting for the directional optical properties, is defined and predicted in order to determine the wafer temperature from the measured spectral radiance temperature using light-pipe radiation thermometry. The true effective emissivity is the same as the hemispherical effective emissivity for diffuse wafers, in which case the Monte Carlo model gives the same results as the net-radiation method. Deviations exist between the hemispherical effective emissivity and the true effective emissivity for specular wafers because the effective emissivity is directional dependent. This research will help reduce the uncertainty in the temperature measurement for RTP furnaces to meet the future requirements for integrated circuit manufacturing.

Monte Carlo Thermal Model of an Integrating Light Pipe for Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
J. C. Thomas ◽  
D. P. Dewitt
Keyword(s):  
Monte Carlo ◽  
Thermal Processing ◽  
Monte Carlo Model ◽  
Rapid Thermal Processing ◽  
Width Ratio ◽  
Temperature Uniformity ◽  
System Parameters ◽  
Light Pipe ◽  
End Wall ◽  
Cavity Width

AbstractA Monte Carlo model is developed to simulate transient wafer heating as a function of system parameters in a kaleidoscope- or integrating light-pipe type cavity with square cross-section. Trends in wafer temperature uniformity are examined as a function of length-to-width ratio, cavity width, and the number of heating lamps. The effect on temperature determination by a radiometer placed in the bottom end wall of the cavity is simulated.

Temperature Monitoring by Ripple Pyrometry in Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
Binh Nguyenphu ◽  
Minseok Oh ◽  
Anthony T. Fiory
Keyword(s):  
Temperature Control ◽  
Integrated Circuit ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Back Side ◽  
Integrated Circuit Manufacturing ◽  
Current Trends ◽  
Processing Steps ◽  
Electrical Data

AbstractCurrent trends of silicon integrated circuit manufacturing demand better temperature control in various thermal processing steps. Rapid thermal processing (RTP) has become a key technique because its single wafer process can accommodate the reduced thermal budget requirements arising from shrinking the dimensions of devices and the trend to larger wafers. However, temperature control by conventional infrared pyrometry, which is highly dependent on wafer back side conditions, is insufficiently accurate for upcoming technologies. Lucent Technologies Inc., formerly known as AT&T Microelectronics and AT&T Bell Laboratories, has developed a powerful real-time pyrometry technique using the A/C ripple signal from heating lamps for in-situ temperature measurement. Temperature and electrical data from device wafers have been passively collected by ripple pyrometers in three RTP systems and analyzed. In this paper we report the statistical analysis of ripple temperature and electrical data from device wafers for a typical implant anneal process temperature range of 900 to 1000 °C.

Complete Modeling of a Light-Pipe Radiation Thermometer in a Rapid Thermal Processing System

2008 ◽  
Author(s):  
Hakan Erturk ◽  
John R. Howell
Keyword(s):  
Monte Carlo ◽  
Thermal Processing ◽  
Monte Carlo Model ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Full Scale ◽  
Temperature Sensitive ◽  
Total System ◽  
Reverse Monte Carlo ◽  
Light Pipe

Light-pipe radiation thermometers are predominantly used to monitor wafer temperature during rapid thermal processing (RTP) of semiconductors. The processes used in fabrication of semiconductor devices during rapid thermal processing are extremely temperature sensitive and the errors associated with light-pipe measurements are great concerns across the industry. Modeling of the light-pipes has helped in understanding the signal transport process and errors associated with the light pipe measurements. However, due to the smaller size of the light-pipe sensor area with respect to the total system area, full scale modeling of such a system including the light pipe thermometer has not been possible due to the computational demand. In this paper, the reverse Monte Carlo method is used to model the signal transport through a light-pipe thermometer used in a RTP system. The Monte Carlo model considers the spectral and angular dependent optical properties of the chamber and quartz materials. The reverse Monte Carlo model is applied to the full scale instrumented system with characteristics of a RTP system with a quartz light pipe probe and the results are compared against previously published measurements from the same system.

Temperature Measurement Issues in Rapid Thermal Processing

1997 ◽  
Vol 470 ◽  
Author(s):  
D. P. DeWitt ◽  
F. Y. Sorrell ◽  
J. K. Elliott
Keyword(s):  
Temperature Measurement ◽  
Thermal Processing ◽  
Radiation Effects ◽  
Temperature Scale ◽  
Rapid Thermal Processing ◽  
Radiative Properties ◽  
Spectral Radiance ◽  
Roughness Effects ◽  
Thermal Radiative Properties ◽  
Stray Radiation

ABSTRACTReliable radiometrie temperature measurement has been a major challenge in making rapid thermal processing (RTP) more widely accepted. In order to meet road map requirements involving temperature uncertainty, uniformity and control, new techniques must be demonstrated and/or existing measurement methods must be substantially improved. Critical aspects of radiometrie methods for temperature measurement are centered about the topics: radiative and optical properties of the wafers including layered systems, surface roughness effects, and reflected irradiation from lamp banks and chamber walls. The systematic method for inferring temperature is rooted in the measurement equation which relates the radiometer output to the exitent spectral radiance from the target which reaches the detector and prescribes the roles that emissivity variability and stray radiation have on the result. An overview is provided on the knowledge base for optical and thermal radiative properties. Methods for reducing emissivity and stray radiation effects are summarized. Calibration procedures necessary to assure that the in-chamber or local temperature scale is traceable to the International Temperature Scale (ITS-90) are discussed. The issues which can impact improved temperature measurement practice are summarized.

A Monte Carlo Model for Analyzing the Effects on Radiometric Temperature Measurement in Rapid Thermal Processor

2006 ◽  
Vol 505-507 ◽  
pp. 325-330
Author(s):  
Jen Chieh Tsao ◽  
Chiung Chieh Su
Keyword(s):  
Monte Carlo ◽  
Temperature Measurement ◽  
Good Accuracy ◽  
Monte Carlo Model ◽  
Radiation Thermometer ◽  
Effective Emissivity ◽  
Semiconductor Wafer ◽  
Wafer Processing ◽  
Radiometric Temperature Measurement

The radiometric temperature measurement is often applied to the in-situ and real-time monitor for rapid thermal processing of semiconductor wafer. To obtain good accuracy, the effective emissivity of measured spot is determined simultaneously as well. However, the effective emissivity strongly depends on the characteristics of wafer, processing chamber, and sensors. This paper presents a Monte Carlo model with bi-directional reflection distribution function to estimate the related effective emissivity of wafer. The ends of radiation thermometer considered are located either on the inner surface of processing chamber or at the proximity of wafer. The results are checked and compared with those of the previous work. Finally the primary effects on radiometric temperature measurement are analyzed and discussed.

Reverse Monte Carlo Modeling of Signal Transport in Light-Pipe Radiation Thermometers

2008 ◽  
Author(s):  
Hakan Erturk ◽  
Ofodike A. Ezekoye ◽  
John R. Howell
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Thermal Processing ◽  
Manufacturing Industry ◽  
Monte Carlo Model ◽  
Rapid Thermal Processing ◽  
Extreme Temperature ◽  
Total System ◽  
Reverse Monte Carlo ◽  
Light Pipe

Rapid thermal processing (RTP) has been widely used by the semiconductor manufacturing industry. Light-pipe radiation thermometers are the predominant method to monitor the wafer temperature during rapid thermal processing. The errors associated with light-pipe measurements are great concerns across the industry due the extreme temperature sensitivity of the processes used to fabricate semiconductor devices during rapid thermal processing. Modeling of the light-pipes has helped understand the signal transport process and errors associated with the light pipe measurements. However, due to the smaller size of the light-pipe sensor area with respect to the total system area full scale modeling of such a system including the light pipe thermometer have not been possible due to the computational demand. In this paper, a reverse Monte Carlo method is developed to model the signal transport through a light-pipe thermometer used in a RTP system. The Monte Carlo model considers the spectral and angle dependent optical properties of the chamber and quartz materials. The reverse Monte Carlo model is applied to a simpler system with a quartz light pipe probe for verification against a model developed using a forward Monte Carlo method.

Difference between Wafer Temperature and Thermocouple Reading during rapid Thermal Processing

1998 ◽  
Vol 525 ◽  
Author(s):  
T. Borca-Tasciuc ◽  
D. A. Achimov ◽  
G. Chen
Keyword(s):  
Temperature Measurement ◽  
Thermophysical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Simple Analytical Model ◽  
Calibration Standard ◽  
Wafer Temperature ◽  
Thermocouple Reading ◽  
The Difference ◽  
Thermocouple Temperature

ABSTRACTThermocouples are often used as a calibration standard for rapid thermal processing. Although it has been recognized that the thermocouple temperature can be different from the wafer temperature, the magnitude of the temperature difference is difficult to quantify. In this work, we present a simple analytical model to demonstrate the difference between the thermocouple temperature and the true wafer temperature. The results show that a large difference can exist between the thermocouple and the wafer temperature. This is because the optical and thermophysical properties of the thermocouple and the glue material are different from those of the wafer. The model results show that temperature measurement becomes more accurate if fine diameter thermocouple wires with very low emissivity are used.

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