Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

Modeling and control of rapid thermal processing

1992 ◽  
Author(s):  
Charles D. Schaper ◽  
Young M. Cho ◽  
Poogyeon Park ◽  
Stephen A. Norman ◽  
Paul Gyugyi ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Modeling And Control ◽  
And Control

Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control

1991 ◽  
Vol 224 ◽  
Author(s):  
Hisham Z. Massoud ◽  
Ronald K. Sampson ◽  
Kevin A. Conrad ◽  
Yao-Zhi Hu ◽  
Eugene A. Irene
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Index Of Refraction ◽  
Strong Temperature Dependence ◽  
Heating And Cooling ◽  
Wafer Processing ◽  
And Control ◽  
Measurement And Control

AbstractThe applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.

Characterization of Process Uniformity and Control of Titanium Silicide Formed by Rapid Thermal Processing (RTP)

1987 ◽  
Vol 92 ◽  
Author(s):  
David Hodul David Hodul ◽  
Sandeep Mehta Sandeep Mehta
Keyword(s):  
Thermal Processing ◽  
Low Temperatures ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Film Properties ◽  
Rapid Annealing ◽  
Oxygen Contamination ◽  
Process Uniformity ◽  
And Control

ABSTRACTSputtered titanium films with thicknesses in the range of 300 to 1200Å were processed in a commercial rapid annealing system to form TiSi2 films. The films were first reacted at low temperatures (500-700°C), etched in ammonia/peroxide solution, and then reacted at 850-900°C to simulate a typical self-alignedsilicide (salicide) process. A method to correctfor dynamic temperature nonuniformities and the resulting etch nonuniformities will be discussed. Sheet resistance maps of the resulting films will be presented. In addition, film properties were measured as a function of annealing ambient in particular, the effects of oxygen contamination were studied.

An Overview and Comparison of Rapid Thermal Processing Equipment: a Users Viewpoint

1985 ◽  
Vol 52 ◽  
Author(s):  
S. R. Wilson ◽  
R. B. Gregory ◽  
W. M. Paulson
Keyword(s):  
Thermal Processing ◽  
Room Temperature ◽  
Rapid Thermal Processing ◽  
High Volume ◽  
Temperature Measurements ◽  
Processing Equipment ◽  
Radiation Sources ◽  
Serial Processor ◽  
Semiconductor Fabrication ◽  
And Control

ABSTRACTFive different RTP units have been examined. These are the Varian RTP-800, the Eaton ROA-400, the A.G. Associates 2101/2106, the Tamarack 180A-C and the Varian IA-200. Each system is a cassette-to-cassette serial processor designed for use in a high volume semiconductor fabrication line. These units will heat a wafer from room temperature to 400–1400C in times on the order of a few seconds. Each unit uses radiation to heat and cool the wafer. The different radiation sources, wafer handling systems, temperature measurements and control computers are discussed. The control of slip and nonuniform temperatures is presented as well as information regarding the types of ambients that can be used in each system.

Rapid Thermal Processing: How Well is it Doing and Where is it Going?

1987 ◽  
Vol 92 ◽  
Author(s):  
T.O. Sedgwick
Keyword(s):  
Thermal Processing ◽  
Film Growth ◽  
Rapid Thermal Processing ◽  
Semiconductor Technology ◽  
Productivity Cost ◽  
Wafer Processing ◽  
And Control ◽  
Measurement And Control ◽  
Reactive Mode ◽  
Made In

ABSTRACTThe use of Rapid Thermal Processing (RTP) as a processing tool in semiconductor technology is still increasing and and becoming more diverse. The use of RTP in a reactive mode for film growth and deposition is an important new direction. The strong interest in III-V compound annealing studies represents one of the most important application areas. Although RTP is predominantly exploratory and developmental in nature it is slowly being introduced into the manufacture of Si devices. The technological necessity for the greater use of RTP in routine production will depend on either demonstrated productivity/cost advantages or on some intrinsic advantage of RTP. The intrinsic advantages of RTP are due to the single wafer processing nature of the operation or due to the possibility of selectively enhancing one desired process over another undesired reaction in a partically fabricated structure. Although significant impovements in commercially available reactors have been made in the last several years, better temperature measurement and control and particularly temperature uniformity of the wafer are still sorely needed.

The Expanding Role of Rapid Thermal Processing in CMOS Manufacturing

2008 ◽  
Vol 573-574 ◽  
pp. 3-19 ◽  
Author(s):  
Jim Nakos ◽  
Joe Shepard
Keyword(s):  
International Business ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Thermal Exposure ◽  
Recent Time ◽  
Wide Spread ◽  
Semiconductor Processing ◽  
Fundamental Limitations ◽  
And Control

The role of single wafer Rapid Thermal Processing (RTP) in semiconductor manufacturing has been steadily expanding over the last 2 decades. There are several reasons for the successful adaptation of this technology. These include more critical requirements by advanced semiconductor technologies with respect to thermal exposure and control, as well as tremendous improvements by the RTP equipment community in resolving some fundamental limitations of the tooling, historically restricting wide spread implementation. From rather humble beginnings, RTP technology has now established itself as indispensable to the production of advanced semiconductor products. We review the history and implementation of RTP technology in semiconductor processing technology at International Business Machines Corporation (IBM) from the late 1980s to recent time.

Rapid Thermal Processing — A User'S Perspective

1987 ◽  
Vol 92 ◽  
Author(s):  
R. T. Fulks
Keyword(s):  
Ion Implantation ◽  
High Throughput ◽  
Thermal Processing ◽  
Research Laboratory ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
User Perspective ◽  
Initial Application ◽  
Implantation Damage ◽  
And Control

ABSTRACTThe technique of rapid thermal processing (RTP) has evolved from research laboratory efforts to quickly heat small pieces of semiconductor material using pulsed or scanned lasers to high throughput, production RTP equipment capable of rapidly heating eight-inch silicon wafers to greater than 1000 deg C in 10 seconds. Furthermore, the initial application of annealing ion implantation damage has expanded to include silicide formation, oxide reflow, contact formation, hillock control and more recently oxidation and nitridation. Nearly a dozen vendors now produce RTP equipment and the potential user must answer the question — “Which equipment is best for me?” The researcher's principal concerns for RTP equipment are flexibility and control while the production engineer wants unifomity, reproducibility, and a reasonable throughput. Meanwhile, the device designer wants a “safe” process with no contamination or other adverse device degradation effects. This paper will focus on these and other issues associated with the use of rapid thermal processing from a user' perspective including some thoughts on where RTP may be headed in the future.

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