scholarly journals 3-D SRIM Simulation of Focused Ion Beam Sputtering with an Application-Oriented Incident Beam Model

2019 ◽  
Vol 9 (23) ◽  
pp. 5133 ◽  
Author(s):  
Lirong Zhao ◽  
Yimin Cui ◽  
Wenping Li ◽  
Wajid Ali Khan ◽  
Yutian Ma
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Incident Beam ◽  
Coulomb Repulsion ◽  
Ion Source ◽  
Material Surface ◽  
Thermal Source ◽  
Beam Model ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Ion beam sputter etching has been widely used in material surface modification and transmission electron microscope (TEM) sample preparation. Due to the complexity of the ion beam etching process, the quantitative simulation of ion beam sputtering is necessary to guarantee precision in surface treatment and sculpting under different energies and beam currents. In this paper, an application-oriented incident ion beam model was first built with aberrations and Coulomb repulsion forces being considered from the Ga ion source to the sample. The sputtering process of this model on the sample was then analyzed and simulated with an improved stopping and range of ions in matter (SRIM) program. The sputtering performance of this model, the point-like incident beam and the typical Gaussian incident beam was given in the end. Results show that the penetration depth of Ga ions having 30 keV energy in silicon is 28 nm and the radial range is 29.6 nm with 50 pA beam current. The application-oriented model has been verified by our focused ion beam-scanning electron microscopy (FIB-SEM) milling experiment and it will be a potential thermal source in simulating the process of FIB bombarding organic samples.

High Resolution FIB as a General Materials Science Tool

1998 ◽  
Vol 4 (S2) ◽  
pp. 492-493 ◽  
Author(s):  
M.W. Phaneuf ◽  
J. Li ◽  
T. Malis
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Materials Science ◽  
Ion Beam ◽  
General Purpose ◽  
Ion Source ◽  
Specimen Preparation ◽  
Ion Beam Sputtering ◽  
Imaging Characteristics ◽  
Beam Sputtering

Focused Ion Beam or FIB systems have been used in integrated circuit production for some time. The ability to combine rapid, precision focused ion beam sputtering or gas-assisted ion etching with focused ion beam deposition allows for rapid-prototyping of circuit modifications and failure analysis of defects even if they are buried deep within the chip's architecture. Inevitably, creative TEM researchers reasoned that a FIB could be used to produce site specific parallel-sided, electron transparent regions, thus bringing about the rather unique situation wherein the specimen preparation device often was worth as much as the TEM itself.More recently, FIB manufacturers have concentrated on improving the resolution and imaging characteristics of these instruments, resulting in a more general-purpose characterization tool. The Micrion 2500 FIB system used in this study is capable of 4 nm imaging resolution using either secondary electron or secondary ions, both generated by a 50 kV liquid metal gallium ion source.

scholarly journals Micrometer-scale machining of metals and polymers enabled by focused ion beam sputtering

1998 ◽  
Vol 546 ◽  
Author(s):  
D. P. Adams ◽  
G. L. Benavides ◽  
M. J. vasile
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
End Mills ◽  
Ultra Precision ◽  
Tool Shank ◽  
Micrometer Scale ◽  
Tool Cutting ◽  
Micro Tools

AbstractThis work combines focused ion beam sputtering and ultra-precision machining for microfabrication of metal alloys and polymers. Specifically, micro-end mills are made by Ga ion beam sputtering of a cylindrical tool shank. Using an ion energy of 20keV, the focused beam defines the tool cutting edges that have submicrometer radii of curvature. We demonstrate 25μm diameter micromilling tools having 2, 4 and 5 cutting edges. These tools fabricate fine channels, 26–28 microns wide, in 6061 aluminum, brass, and polymethyl methacrylate. Micro-tools are structurally robust and operate for more than 5 hours without fracture.

TiOxCy Thin Film Deposition by CO2+-Ion Beam Sputtering of Titanium

1993 ◽  
Vol 316 ◽  
Author(s):  
BERTILO E. KEMPF
Keyword(s):  
Near Infrared ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Ion Source ◽  
Film Deposition ◽  
Refractive Indices ◽  
Ion Beam Sputtering ◽  
Infrared Wavelength ◽  
Beam Sputtering ◽  
Current Densities

ABSTRACTTitanium metal is sputtered by ion beams using a Kaufman-type ion source with carbondioxide as working gas. Deposition takes place on watercooled substrates of silicon and InP. The films obtained are amorphous; they adhere excellently. SEM-pictures reveal a featureless dense fracture and a smooth surface. Despite a carbon content of 9 at % the films are highly transparent in the visible and near infrared wavelength range. Refractive indices center around 2.15 at values typically found for amorphous TiO2. The electrical properties are characterized by dielectric constant of ε = 26 ± 3, leakage current densities at breakdown of jL = 3.65 . 10-3 A/cm2 and breakdown fields EB > 1 MeV/cm.

The Phase Composition and Structure of Silicon-Carbon Coatings

2019 ◽  
Vol 970 ◽  
pp. 283-289
Author(s):  
Alexander S. Rudenkov ◽  
Alexander V. Rogachev ◽  
Alexander N. Kupo ◽  
Petr A. Luchnikov ◽  
Nataliya Chicherina
Keyword(s):  
Heat Treatment ◽  
Silicon Carbide ◽  
Phase Composition ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Sputtering ◽  
Carbon Coatings ◽  
Silicon Carbon ◽  
Composition And Structure ◽  
Beam Sputtering

The effect of the formation and heat treatment modes of silicon-carbon coatings deposited by ion-beam sputtering of silicon carbide on their morphology, chemical and phase composition is determined. It has been established that an increase in the power of the ion source from 432 W to 738 W leads to a decrease in the sp3/sp2 phase ratio by 1.7 times and an increase in the ratio of Si-C/Si-O bonds by 1.9 times. It is shown that doping of carbon coatings with silicon carbide increases their heat resistance.

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