Atomic layer epitaxy of GaAs using nitrogen carrier gas

1991 ◽  
Vol 59 (17) ◽  
pp. 2148-2149 ◽  
Author(s):  
Haruki Yokoyama ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Carrier Gas

In SituObservation of Halogen-Transport Atomic Layer Epitaxy of GaAs in Inert Carrier Gas System

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1277-L1280 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Minoru Yagi ◽  
Akinori Koukitu ◽  
Hisashi Seki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Carrier Gas ◽  
Gas System ◽  
Inert Carrier

Atomic layer epitaxy of GaAs using N2 carrier gas

1991 ◽  
Vol 115 (1-4) ◽  
pp. 89-93 ◽  
Author(s):  
Haruki Yokoyama ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Carrier Gas

A Possibility of ALE Growth of InN by using InCl3

1991 ◽  
Vol 222 ◽  
Author(s):  
Kazuhito Higuchi ◽  
Akio Unno ◽  
Tadashi Shiraishi
Keyword(s):  
Growth Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
Inert Gas ◽  
Atomic Layer Epitaxy ◽  
Structural Defects ◽  
Carrier Gas ◽  
Temperature Range

ABSTRACTA possibility of the Atomic Layer Epitaxy, ALE, for InN was demonstrated by using InC13/N2 and NH3/N2. The InCl3 is a solid at room temperature and can be supplied in the reactor by heating with N2 carrier gas. When the solid InCl3 is heated in an inert gas, InCl, InCl3 and In2Cl3 gases are formed. It was clear that the In2Cl5 which is the largest molecule of the three results in solid structural defects. The ALE growth temperature was from 440°C to 505°C. The fact that the ALE was performed at the temperature range from 440°C to 505°C indicates that In was supplied as InC13, suggesting the possibility of InN ALE by using InCl3 and NH3.

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Steric hindrance effects in atomic layer epitaxy of InAs

1989 ◽  
Vol 55 (3) ◽  
pp. 244-246 ◽  
Author(s):  
Weon G. Jeong ◽  
E. P. Menu ◽  
P. D. Dapkus
Keyword(s):  
Steric Hindrance ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy

1994 ◽  
Vol 33 (Part 2, No. 9B) ◽  
pp. L1292-L1294 ◽  
Author(s):  
Haruki Yokoyama ◽  
Masafumi Tanimoto ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Growth Processes ◽  
Force Microscopy ◽  
Atomic Force
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