Tem Characterization of Dislocations in GaAs-ON-Si Heterostructures Wite Sjpereatlice Intermediate Iayers

1990 ◽  
Vol 198 ◽  
Author(s):  
T. Soga ◽  
H. Nishikawa ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Intermediate Layer ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Gaas Layer ◽  
Si Substrate ◽  
Etch Pit ◽  
Thermal Cycle Annealing ◽  
Intermediate Layers ◽  
Strained Layer Superlattice

ABSTRACTGaAs was grown on Si substrate by metalorganic chemical vapor deposition using GaAs/GaAsP strained layer superlattice (SLS) intermediate layers. The dislocation density decreases at the interface between GaAs and SLS, but does not decrease in the SLS. When GaAs/GaAsP SLS is used as the intermediate layer, a part of the dislocation propagates into the top GaAs layer because of the lattice mismatch of GaAs and SLS. The low etch-pit-density of (3-5) x 105 cm−2 was obtained by using the intermediate layer of GaAs/GaAsP SLS and AlAs/GaAs superlattice with thermal-cycle annealing.

MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Venkatasubramanian ◽  
P. R. Sharps ◽  
M. L. Timmons ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Lattice Mismatch ◽  
Antiphase Domain ◽  
Multilayer Structures ◽  
Si Substrate ◽  
Mbe Growth ◽  
Etch Pit ◽  
Layer Structures ◽  
Domain Boundaries

ABSTRACTInvestigation has continued into the use of SixGe1−x multilayer structures (MLS) as a buffer layer between a Si substrate and a GaAs epitaxial layer in order to accommodate the 4.1% lattice mismatch. SixGe1−x 4-layer and 5-layer structures terminating in pure Ge have been grown using molecular beam epitaxy. Subsequent GaAs heteroepitaxy has allowed evaluation of these various GaAs/SixGe1−xMLS/Si (100) structures. Antiphase domain boundaries have been eliminated using vicinal Si (100) substrates tilted 6° off-axis toward [011], and the etch pit density in GaAs grown on a 5-layer SixGe1−x MLS on vicinal Si (lOO) was measured to be 106 cm−2.

Growth of Gaas on Si Using Algap Intermediate Layer

1989 ◽  
Vol 148 ◽  
Author(s):  
N. Noto ◽  
S. Nozaki ◽  
T. Egawa ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Chemical Vapor ◽  
Gaas Layer ◽  
Organic Chemical ◽  
Heteroepitaxial Growth ◽  
Etch Pit ◽  
Gaas On Si ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe have studied heteroepitaxial growth of GaAs on Si using an AlxGa1−xP intermediate layer in an atmospheric-pressure metal organic chemical vapor deposition (NOCVD) reactor. The crystallinity of the GaAs layer depends on AlP composition(x) of the intermediate layer. The bett crystal quality of GaAs layer is obtained when the AlP composition(x) of the intermediate layer is close to 0.5. The X-ray FWHX of 180 arcs and the etch pit density (EPD) of 2.5 × 107cm−2 were obtained in this GaAs/AlGaP/Si structure.

Characterization of Polycrystalline Silicon Multilayers with thin Nitride/Oxide Films Using Spectroscopic Ellipsometry

1993 ◽  
Vol 324 ◽  
Author(s):  
L.M. Asinovsky
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Strongly Correlated ◽  
Si Substrate ◽  
Lorentz Oscillator ◽  
Pressure Chemical ◽  
Complete Recrystallization ◽  
Nitride Oxide

AbstractSpectroscopic ellipsometry has been used to characterize oxide/poly-Si/oxide with thin nitride/oxide layer. Films were deposited on Si substrate using low-pressure chemical vapor deposition (LPCVD) techniques. The measurements were taken at angles of incidence of 65 and 70 degrees in the wavelength range from 300 to 800 nm. The analysis of the data using effective medium and two-dimensional Lorentz oscillator approximations identified complete recrystallization of the poly-Si after annealing and and its transformation to µ c-Si. Three wafers taken at the sequential stages of the manufacturing process were studied. Although parameters of the thin nitride/oxide layers are strongly correlated, reasonable estimates of the thicknesses were found. The resuilts were consistent with the measured Auger electron spectroscopy (AES) profiles.

Characterization of diamond nucleation on Fe/Si substrate by hot-filament chemical vapor deposition

Vacuum ◽  
1993 ◽  
Vol 44 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Kenji Kobayashi ◽  
Tomoyasu Nakano ◽  
Nobuki Mutsukura ◽  
Yoshio Machi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Hot Filament

Nucleation and initial growth of diamond film on Si substrate

1994 ◽  
Vol 9 (10) ◽  
pp. 2695-2702 ◽  
Author(s):  
N. Jiang ◽  
B.W. Sun ◽  
Z. Zhang ◽  
Z. Lin
Keyword(s):  
Diamond Film ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Amorphous Layer ◽  
Initial Growth ◽  
Orientation Relationships ◽  
Si Substrate ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Sic Particles

A high resolution electron microscopic (HREM) study of interface structure between diamond film and its silicon substrate is presented. The HREM images reveal that there is an amorphous intermediate layer between the diamond film and its substrate for samples grown by hot filament chemical vapor deposition (HF-CVD). In some cases, β-SiC crystallites and a few graphite microcrystallites may be embedded in this amorphous layer. The HREM images obtained from cross-sectional specimens reveal that the diamond crystallites nucleate directly either on the amorphous intermediate layer, at diamond seed crystallites that were left during pretreatment of Si substrate by diamond paste,β-SiC particles, or at some scratches of the Si substrate. HREM images also reveal that the quantity, distribution, and the size of β-SiC particles in the intermediate layer are different for different processes. Some β-SiC crystallites have certain orientation relationships with the Si substrate. A HREM study of cross-sectional specimens indicates that twins and microtwins in the HF-CVD diamond film are formed during nucleation of the film either from diamond seeds, β-SiC crystallites, or the amorphous intermediate layer. Multiple twins formed from different β-SiC crystallites have also been observed. High densities of “V” shaped microtwins formed during the initial growth of the diamonds and the formation mechanism of these twins are discussed.

Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate

2015 ◽  
Vol 15 (10) ◽  
pp. 7832-7835 ◽  
Author(s):  
Zagarzusem Khurelbaatar ◽  
Yeon-Ho Kil ◽  
Taek Sung Kim ◽  
Kyu-Hwan Shim
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Doping Concentration ◽  
Reverse Bias ◽  
Chemical Vapor ◽  
Antireflection Coating ◽  
Infrared Photodetector ◽  
Si Substrate ◽  
Thermal Chemical Vapor Deposition

We report on the optoelectronic characterization of Ge p–i–n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 × 1018 cm–3 and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530–1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.

Epitaxial Growth of Inp on Si by Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
F. Konushi ◽  
A. Seki ◽  
J. Kudo ◽  
H. Sato ◽  
S. Kakimoto ◽  
...  
Keyword(s):  
Residual Stress ◽  
Epitaxial Growth ◽  
Intermediate Layer ◽  
Lattice Mismatch ◽  
Single Domain ◽  
Etch Pit Density ◽  
Si Substrates ◽  
Etch Pit

AbstractThe heteroepitaxy of InP on Si substrates was investigated using MOCVD. A thin GaAs intermediate layer was used to alleviate the 8.4% lattice mismatch between InP and Si. With the use of this intermediate layer, four inch size, single domain InP epilayer with small residual stress was reproducibly grown on off-(100) oriented Si substrates. The etch pit density (EPD) of as-grown InP layer was 5x107~1x108 cm-2 . The post growth annealing of this epilayer at 800~850ºC in aPH3+H2 ambient reduced EPD to 1~2x107 cm-2

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