Epitaxial Growth of Inp on Si by Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
F. Konushi ◽  
A. Seki ◽  
J. Kudo ◽  
H. Sato ◽  
S. Kakimoto ◽  
...  
Keyword(s):  
Residual Stress ◽  
Epitaxial Growth ◽  
Intermediate Layer ◽  
Lattice Mismatch ◽  
Single Domain ◽  
Etch Pit Density ◽  
Si Substrates ◽  
Etch Pit

AbstractThe heteroepitaxy of InP on Si substrates was investigated using MOCVD. A thin GaAs intermediate layer was used to alleviate the 8.4% lattice mismatch between InP and Si. With the use of this intermediate layer, four inch size, single domain InP epilayer with small residual stress was reproducibly grown on off-(100) oriented Si substrates. The etch pit density (EPD) of as-grown InP layer was 5x107~1x108 cm-2 . The post growth annealing of this epilayer at 800~850ºC in aPH3+H2 ambient reduced EPD to 1~2x107 cm-2

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas

2008 ◽  
Vol 600-603 ◽  
pp. 247-250 ◽  
Author(s):  
Yasuo Hirabayashi ◽  
Satoru Kaneko ◽  
Kensuke Akiyama
Keyword(s):  
Epitaxial Growth ◽  
Heating Rate ◽  
Smooth Surface ◽  
Early Stage ◽  
Low Pressure ◽  
Single Domain ◽  
Single Crystalline ◽  
Si Substrates

The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without thermal pits is studied. Subsequent hetero-epitaxial 3C-SiC with smooth surface have been grown by low-pressure CVD. Single-crystalline carbonized layers could be grown at 1050°C by using suitable carbonization processes. The surfaces of Si were covered with single-crystalline 3C-SiC layers at an early stage of carbonization, preventing out-diffusion of Si atoms from Si substrates. 3C-SiC epi-film have RMS = 0.4nm but no single domain. The protrusion density of the film was an order of 1000 cm-2.

Influence of stress on structural and dielectric anomaly of Bi2(Zn1/3Ta2/3)207 thin films

2005 ◽  
Vol 875 ◽  
Author(s):  
Jun Hong Noh ◽  
Hee Bum Hong ◽  
Kug Sun Hong
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Interfacial Layer ◽  
Monoclinic Phase ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Dielectric Anomaly ◽  
Laser Deposition ◽  
Cubic Phase ◽  
Si Substrates

AbstractBi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.

Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers

2006 ◽  
Vol 527-529 ◽  
pp. 147-152 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Tomohisa Kato ◽  
Satoshi Kuroda ◽  
Hajime Okumura ◽  
Kazuo Arai
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Etch Pit Density ◽  
High Conversion Efficiency ◽  
Etch Pit ◽  
Edge Dislocations

We have investigated the generation of new dislocations during the epitaxial growth of 4H-SiC layers. Dislocations were mainly propagated from the substrate into the epitaxial layer. However, it was found that some amount of new threading edge dislocations (TEDs) and basal plane dislocations (BPDs) were generated during the epitaxial growth. The generation of those dislocations appeared to depend on the in-situ H2 etching conditions, not the epitaxial growth conditions. By optimizing in-situ H2 etching condition, we were able to effectively suppress the generation of new dislocations during epitaxial growth, and obtain 4H-SiC epitaxial layers which have the equivalent etch pit density (EPD) to the substrates. Our additional investigation of the conversion of BPDs to TEDs revealed that its efficiency similarly depends on in-situ H2 etching. We were able to obtain a high conversion efficiency of 97 % by optimizing the in-situ H2 etching conditions before epitaxial growth.

MOCVD Growth of III-V Compounds on Si Using Strained Superlattices

1986 ◽  
Vol 67 ◽  
Author(s):  
Shiro Sakai ◽  
Tetsuo Soga ◽  
Masanari Takeyasu ◽  
Masayoshi Umeno
Keyword(s):  
Electronic Properties ◽  
Intermediate Layer ◽  
Lattice Mismatch ◽  
Gaas Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Mocvd Growth ◽  
Structural And Electronic Properties

ABSTRACTGaAs and GaAsP with the entire compositional range are grow on Si using an intermediate layer of GaAsP strained superlattices to relax the lattice mismatch. The orientation of the overgrown GaAs layer is found to be determined by the direction of the off-angle of the Si (100) surface. The grown layers are characterized by photoluminescence, x-ray diffraction, electro reflectance and DLTS. GaAs/GaAlAs double heterostructure lasers and GaAsP visible LED's are fabricated on Si substrates. The structural and electronic properties of the grown layers and the device performances are reported in this paper.

Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates

2004 ◽  
Vol 815 ◽  
Author(s):  
S. Nishino ◽  
A. Shoji ◽  
T. Nishiguchi ◽  
S. Ohshima
Keyword(s):  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Misfit Dislocations ◽  
High Electron ◽  
Large Area ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Cubic Silicon Carbide

AbstractCubic silicon carbide (3C-SiC) is a suitable semiconductor material for high temperature, high power and high frequency electronic devices, because of its wide bandgap, high electron mobility and high saturated electron drift velocity. The usage of Si substrates has the advantage of large area substrates for the growth of 3C-SiC layers. However, large lattice mismatch between 3C-SiC and Si (>20%) has caused the generation of defects such as misfit dislocations, twins, stacking faults and threading dislocations at the SiC/Si interface. Lateral epitaxial overgrowth (ELOG) of 3C-SiC on Si substrates using SiO2 has been reported to reduce the defect density. In this report, epitaxial growth of 3C-SiC on T-shape patterned (100) Si substrates has been investigated to reduce interfacial defects.

Tem Characterization of Dislocations in GaAs-ON-Si Heterostructures Wite Sjpereatlice Intermediate Iayers

1990 ◽  
Vol 198 ◽  
Author(s):  
T. Soga ◽  
H. Nishikawa ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Intermediate Layer ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Gaas Layer ◽  
Si Substrate ◽  
Etch Pit ◽  
Thermal Cycle Annealing ◽  
Intermediate Layers ◽  
Strained Layer Superlattice

ABSTRACTGaAs was grown on Si substrate by metalorganic chemical vapor deposition using GaAs/GaAsP strained layer superlattice (SLS) intermediate layers. The dislocation density decreases at the interface between GaAs and SLS, but does not decrease in the SLS. When GaAs/GaAsP SLS is used as the intermediate layer, a part of the dislocation propagates into the top GaAs layer because of the lattice mismatch of GaAs and SLS. The low etch-pit-density of (3-5) x 105 cm−2 was obtained by using the intermediate layer of GaAs/GaAsP SLS and AlAs/GaAs superlattice with thermal-cycle annealing.

4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS)

2012 ◽  
Vol 717-720 ◽  
pp. 101-104 ◽  
Author(s):  
Takashi Aigo ◽  
Wataru Ito ◽  
Hiroshi Tsuge ◽  
Hirokatsu Yashiro ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Growth Temperature ◽  
Defect Density ◽  
Stacking Faults ◽  
Optimal Conditions ◽  
Etch Pit Density ◽  
Etch Pit ◽  
Good Surface ◽  
Fault Density ◽  
Band Pass

4H-SiC epitaxial growth on 2˚ off-axis substrates using trichlorosilane (TCS) is presented. Good surface morphology was obtained for epilayers with C/Si ratios of 0.6 and 0.8 at a growth temperature of 1600°C. The triangle defect density was reduced to a level below 5 cm-2 at 1600°C and below 1 cm-2 at 1625°C for a C/Si ratio of 0.8. Photoluminescence (PL) measurements were carried out with band-pass filters of 420 nm, 460 nm, and 480 nm to detect stacking faults. A stacking fault density of below 5 cm-2 was achieved at 1600°C and 1625°C with a C/Si ratio of 0.8. The optimal conditions for TCS growth were a C/Si ratio of 0.8 and a growth temperature of 1600°C. The evaluation of stacking faults and etch pit density indicated that the use of 2˚ off-axis substrates and TCS is effective for reducing basal plane dislocations. Comparing these results to those using silane (SiH4) with HCl added, it was demonstrated that TCS is much more suitable for obtaining high-quality epilayers on 2º off-axis substrates.

Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films

1994 ◽  
Vol 357 ◽  
Author(s):  
Jinshan Li ◽  
Robert Sinclair ◽  
Stephen S. Rosenblum ◽  
Hidetaka Hayashi
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Transition Layer ◽  
Barium Ferrite ◽  
Lattice Mismatch ◽  
Interface Reaction ◽  
Magnetic Thin Films ◽  
Point Of View ◽  
Si Substrates ◽  
Out Of Plane

AbstractUsing facing target sputtering, crystalline magnetoplumbite-type barium ferrite (BaFe12O19 or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as ZnFe2O4, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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