The method to attach seed to crucible lid as well as seed quality is very important for obtaining high quality crystals. Therefore, modified seeding method was developed for improving adhesive layer between seed and graphite crucible lid. SiC single crystal grown with modified seeding method definitely exhibited lower micropipe density (MPD) and lower full width at half maximum (FWHM) values comparing with values from conventional seeding method. Etch pit density of SiC crystal was successfully decreased with using the modified seeding method.
The etch pits on the C-face 4H-SiC substrate was produced by chlorine trifluoride gas at various temperatures. The etch pit density showed the comparable value to the current dislocation density level of the Si-face 4H-SiC, when the etching was performed around 713 K. Thus, the etch pit density obtained by this technique is expected to reveal the crystal quality.
The etch pit density produced on the C-face 4H-SiC substrate using chlorine trifluoride gas at various temperatures was evaluated. Because the etch pit density formed at the substrate temperature of 713 K showed the comparable value to the current dislocation level of the Si-face 4H-SiC, the etch pit density obtained by this technique is considered to have a relationship with the crystal quality.
Automatic etch pit density analysis in multicrystalline silicon