Characterization of Polycrystalline Silicon Multilayers with thin Nitride/Oxide Films Using Spectroscopic Ellipsometry

1993 ◽  
Vol 324 ◽  
Author(s):  
L.M. Asinovsky
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Strongly Correlated ◽  
Si Substrate ◽  
Lorentz Oscillator ◽  
Pressure Chemical ◽  
Complete Recrystallization ◽  
Nitride Oxide

AbstractSpectroscopic ellipsometry has been used to characterize oxide/poly-Si/oxide with thin nitride/oxide layer. Films were deposited on Si substrate using low-pressure chemical vapor deposition (LPCVD) techniques. The measurements were taken at angles of incidence of 65 and 70 degrees in the wavelength range from 300 to 800 nm. The analysis of the data using effective medium and two-dimensional Lorentz oscillator approximations identified complete recrystallization of the poly-Si after annealing and and its transformation to µ c-Si. Three wafers taken at the sequential stages of the manufacturing process were studied. Although parameters of the thin nitride/oxide layers are strongly correlated, reasonable estimates of the thicknesses were found. The resuilts were consistent with the measured Auger electron spectroscopy (AES) profiles.

Polycrystalline Silicon Gettering Layers with Controlled Residual Stress

2013 ◽  
Vol 205-206 ◽  
pp. 284-289 ◽  
Author(s):  
David Lysáček ◽  
Petr Kostelník ◽  
Petr Pánek
Keyword(s):  
Residual Stress ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Opposite Sign ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Novel Method ◽  
The Individual ◽  
Scanning Electron

We report on a novel method of low pressure chemical vapor deposition of polycrystalline silicon layers used for external gettering in silicon substrate for semiconductor applications. The proposed method allowed us to produce layers of polycrystalline silicon with pre-determined residual stress. The method is based on the deposition of a multilayer system formed by two layers. The first layer is intentionally designed to have tensile stress while the second layer has compressive stress. Opposite sign of the residual stresses of the individual layers enables to pre-determine the residual stress of the gettering stack. We used scanning electron microscopy for structural characterization of the layers and intentional contamination for demonstration of the gettering properties. Residual stress of the layers was calculated from the wafer curvature.

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

1998 ◽  
Vol 13 (2) ◽  
pp. 406-412 ◽  
Author(s):  
Christian A. Zorman ◽  
Shuvo Roy ◽  
Chien-Hung Wu ◽  
Aaron J. Fleischman ◽  
Mehran Mehregany
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Pressure Chemical ◽  
Temperature Deposition ◽  
Sic Films

X-ray diffraction, transmission electron microscopy, and Rutherford backscattering spectroscopy were used to characterize the microstructure of polycrystalline SiC films grown on as-deposited and annealed polysilicon substrates. For both substrate types, the texture of the SiC films resembles the polysilicon at the onset of SiC growth. During the high temperature deposition process, the as-deposited polysilicon recrystallizes without influencing the crystallinity of the overlying SiC. An investigation of the SiC/polysilicon interface reveals that a heteroepitaxial relationship exists between polysilicon and SiC grains. From this study, a method to control the orientation of highly textured polycrystalline SiC films has been developed.

Characterization of the Thin Oxide-Nitride-Oxide (ONO) Structure Using Spectroscopic Ellipsometry

1994 ◽  
Vol 358 ◽  
Author(s):  
Leo M. Asinovsky ◽  
Steve Zierer
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Chemical Vapor ◽  
Transmission Electron ◽  
Plausible Model ◽  
Layer Structures ◽  
Pressure Chemical ◽  
Adequate Representation ◽  
Oxynitride Film ◽  
Thin Oxide ◽  
Nitride Oxide

ABSTRACTSpectroscopic ellipsometry has been used to characterize thin oxide/nitride/oxide (ONO) layer structures. Films were deposited on top of the Si/oxide/polysilicon filmstack using a low-pressure chemical vapor deposition (LPCVD) technique. Different approaches to modeling this structure are compared to select an adequate representation. Analysis of the data for the three-layer-with-abrupt-interfaces ONO model using an effective-medium or Cauchy approximation shows strong correlation of the parameters and ambiguity of the results. A more robust and physically plausible model of the ONO structure as an inhomogeneous oxynitride film with Gaussian distribution of the silicon nitride component is suggested. This interpretation of the ONO structure is supported by the results of Auger electron spectroscopy (AES) and transmission electron microscopy (XTEM).

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