The Role of Ions for the Deposition of Hydrocarbon Films, investigated by In-Situ Ellipsometry

1995 ◽  
Vol 388 ◽  
Author(s):  
A. Von Keudell
Keyword(s):  
Growth Rate ◽  
Film Surface ◽  
Ion Bombardment ◽  
Floating Potential ◽  
Film Properties ◽  
Ecr Plasma ◽  
Hydrocarbon Films ◽  
Self Bias

AbstractThe growth mechanisms for the deposition of hydrocarbon films (C:H-films) from a methane electron cyclotron resonance (ECR) plasma are investigated by means of in-situ ellipsometry. Ion bombardment during plasma-enhanced chemical vapor deposition of hydrocarbon films mainly governs the properties of the films and the total growth rate. the role of ions for the growth rate and the film properties is discussed in this paper. Films were deposited with varying RF-bias, resulting in a DC self-bias ranging from floating potential up to 100 V. the ion-induced modification of the film properties was investigated by a new technique using a double layer consisting of a polymer-like film with low optical absorption and a hard carbon film with high absorption on top. the interface between these layers was analysed after deposition by a layer-by-layer etching in an oxygen plasma at floating potential. From these data it is possible to determine with high accuracy the range of the ion-induced modification of the optical properties in the underlying polymer-like film. the thickness of this modified layer ranges from 6 Å at 30 V self-bias to 40 Å at 100 V self-bias, which is consistent with the range of hydrogen ions in polymerlike films as calculated by the computer code TRIM.SP.Based on the presented results, the growth of C:H-films and the resulting film properties can be modelled by the growth at activated sites at the film surface. these activated sites are represented by dangling bonds, induced by the ion bombardment. they also show up in the ellipsometric results during the deposition of C:H-films by a change of the optical response of the film surface.

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

Role of atomic oxygen produced by ECR plasma in the oxidation of YBa2Cu3O7-Xthin films studied by in-situ resistivity measurement

1991 ◽  
Vol 4 (1S) ◽  
pp. S382-S384
Author(s):  
K Yamamoto ◽  
B M Liarson ◽  
C B Eom ◽  
R H Hammond ◽  
J C Bravman ◽  
...  
Keyword(s):  
Atomic Oxygen ◽  
Resistivity Measurement ◽  
Ecr Plasma

ECR Plasma Deposition of Dielectrics for Optoelectronic Applications

1989 ◽  
Vol 165 ◽  
Author(s):  
Steven Dzioba
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Plasma Source ◽  
Optoelectronic Device ◽  
Dielectric Films ◽  
Film Properties ◽  
Ecr Plasma ◽  
Device Applications ◽  
Inp Substrates

A UHV electron cyclotron resonance (ECR) plasma source has been used to deposit SiNx, SiOxNy and amorphous Si thin films on InP substrates for optoelectronic device applications. High quality dielectric films can be deposited at temperatures significantly lower than conventional techniques, namely less than 110°C. Selected applications pertinent to optoelectronic devices are used to establish the role of ion/electron fluxes in thin film properties.

Room Temperature Nitridation and Oxidation of Si, Ge and Mbegrown Sige Using Low Energy Ion Beams (0.1-1 Kev).

1991 ◽  
Vol 223 ◽  
Author(s):  
O. Vancauwenberghe ◽  
O. C. Hellman ◽  
N. Herbots ◽  
J. L. Olson ◽  
W. J. Tan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Film Properties ◽  
Dielectric Thin Films ◽  
Ion Energy ◽  
Insulating Films ◽  
Ion Energies ◽  
Energy Dependent

ABSTRACTDirect Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase formation and film properties. Si0.8Ge0.2 films were grown by MBE on Si (100) and transferred in UHV to the ion beam processing chamber. The modification of composition and chemical binding was measured as a function of ion beam exposure by in situ XPS analysis. The samples were nitridized or oxidized using until the N or O 1s signal reached saturation for ion doses between 5×1016 to 1×1017 ions/cm2. Combined characterization by XPS, SEM, ellipsometry and cross-section TEM showed that insulating films of stoichiometric SiO2 and Si-rich Si3N4 were formed during IBO and IBN of Si at all energies used. The formation of Ge dielectric thin films by IBO and IBN was found to be strongly energy dependent and insulating layers could be grown only at the lower energies (E ≤ 200 eV). In contrast to pure Ge, insulating SiGe-oxide and SiGe-nitride were successfully formed on Si0.8Ge0.20.2 at all energies studied.

The Role of Heavy Hydrocarbons in Cvd Diamond Growth

1992 ◽  
Vol 270 ◽  
Author(s):  
Ching-Hsong Wu ◽  
T. J. Potter ◽  
M. A. Tamor
Keyword(s):  
Growth Rate ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Spectrometric Analysis ◽  
Heavy Hydrocarbons ◽  
Hot Filament Cvd ◽  
Hot Filament ◽  
Deposition Conditions

ABSTRACTA mass spectrometric analysis of heavy hydrocarbons (HHCs) during hot-filament CVD diamond growth was performed together with in situ monitoring of the growth rate. Many HHCs were detected and tentatively identified. Of all HHCs studied, only diacetylene shows good correlation with the diamond growth rate under various deposition conditions. Its possible role is discussed.

Role of ion bombardment in forming CNx and CNxHy films deposited by r.f.-magnetron reactive sputtering and ECR plasma-activated CVD methods

1999 ◽  
Vol 113 (1-2) ◽  
pp. 134-139 ◽  
Author(s):  
L.R. Shaginyan ◽  
A.A. Onoprienko ◽  
V.M. Vereschaka ◽  
F. Fendrych ◽  
V.G. Vysotsky
Keyword(s):  
Ion Bombardment ◽  
Reactive Sputtering ◽  
Ecr Plasma

The Growth Of High-Quality MCT Films by MBE Using in Situ Ellipsometry

1994 ◽  
Vol 299 ◽  
Author(s):  
K.K. Svitashev ◽  
S.A. Dvorwetsky ◽  
V.A. Shvets ◽  
A.S. Mardezhov ◽  
YU.G. Sidoroy ◽  
...  
Keyword(s):  
Growth Rate ◽  
Initial Temperature ◽  
Film Surface ◽  
Life Time ◽  
Optimal Growth ◽  
Ellipsometric Parameter ◽  
High Quality ◽  
Initial Stage ◽  
Optimal Growth Condition

AbstractThe ellipsometry and RHEED study of MCT grown on (112) CdTe and GaAs by MBE was carried out. The dependence of ellipsometric parameter on composition is evaluated. As shown we can measure the growth rate, the roughness changing, initial temperature and composition by ellipsometry in situ. We investigated the evolution of roughness of film surface. We observed the appearance of surface roughness at initial stage of MCT growth under various composition (XcdTe0÷0.4). The following growth in optimal growth condition (including constancy of substrate temperature) gives us the smoothing of the surface and supplies us the high-quality MCT films. It is found that under constant temperature of substrate heater we can not grow the thick, perfect film of MCT. The concentration, mobility and life time of carriers in MCT films were respectively: n=1.8*1014 ÷8.2*1015cm−3, μn=44000÷370000cm2 V−1 s−1, τ=40÷220ns;p=1.8*1015÷8.4*1015 cm−3, μp=215÷284 cm2V−1 s−1 τ=12÷20ns.

The Effects of ion Bombardment in Plasma Polymerization

1986 ◽  
Vol 68 ◽  
Author(s):  
Richard J. Buss
Keyword(s):  
Plasma Polymerization ◽  
Molecular Beam ◽  
Vacuum Chamber ◽  
Uv Light ◽  
Film Surface ◽  
Ion Bombardment ◽  
Ir Absorption ◽  
Ir Absorption Spectra ◽  
Plasma Species

AbstractA molecular beam probe technique has been used to investigate the role of ion bombardment of the film surface during the plasma polymeriz-ation process.Thin films have been deposited in a vacuum chamber from a molecular beam containing all the plasma species and these were compared with similar deposits from a beam with the charged particles deflected away.A comparison was made of deposition rates, vis/UV and IR absorption spectra of the films.It was found that the deposition rate was increased 20% with the elimination of ion bombardment.Ions incident on the film surface during deposition cause a net ablation of the film.The ion bombardment also causes an increased absorption of UV and near UV light by the film resulting in a noticeable yellowing.No change was observed in the IR spectra of the films with ion deflection.

Influence of Plasma Chemistry on the Properties of Amorphous (Si,Ge) Alloy Devices

1998 ◽  
Vol 507 ◽  
Author(s):  
Vikram L. Dalal ◽  
Tim Maxson ◽  
Sohail Haroon
Keyword(s):  
Momentum Transfer ◽  
Plasma Deposition ◽  
Hydrogen Plasma ◽  
Plasma Chemistry ◽  
Ion Bombardment ◽  
Film Properties ◽  
Efficient Energy ◽  
Ecr Plasma ◽  
Amorphous Si ◽  
Energy And Momentum

ABSTRACTWe report on the growth and properties of a-(Si,Ge):H films and p-i-n solar cell devices prepared using a remote, low pressure ECR plasma deposition technique. The films and devices were prepared using either He or H2 as the diluent gas. The plasma conditions were controlled so as to induce significant ion bombardment during growth. We find that there is a dramatic influence of plasma chemistry on the growth and properties of a-(Si,Ge):H films and devices. In particular, with hydrogen as the diluent gas, changing the pressure in the reactor dramatically changes both the Germanium incorporation in the film, and the electronic properties. Lower pressures lead to less Ge being incorporated, and higher mobility-lifetime product for holes for a given Tauc gap, as well as better p-i-n devices. In contrast, changing the pressure when He is the diluent gas does not produce such large changes. We speculate that the changes in device and film properties are due to the influence of ion bombardment on growth chemistry, and that both efficient energy and momentum transfer to the growing surface are necessary to achieve the best devices. The differences between He and hydrogen may simply be due to the fact that He plasma is much more energetic than a comparable hydrogen plasma, and there is more efficient momentum transfer when He is used as compared to when hydrogen is used. We have also produced very good single junction a-(Si,Ge) devices using the ECR technique.

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