Remote Ecr Plasma Deposition of Diamond Thin Films from Water-Methanol Mixtures

1992 ◽  
Vol 242 ◽  
Author(s):  
R. K. Singh ◽  
D. Gilbert ◽  
R. Tellshow ◽  
R. Koba ◽  
R. Ochoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Diamond Films ◽  
Processing Parameters ◽  
Gas Composition ◽  
X Ray Diffraction ◽  
Ecr Plasma ◽  
Diamond Thin Films ◽  
Bonding Characteristics

ABSTRACTWe have applied an electron cyclotron resonance technique to deposit diamond thin films on various substrates under remote plasma, low temperature (600°C) and low pressure (60 mTorr) conditions. Diamond films were grown on different substrates (silicon, molybdenum) with varying concentrations of precursor gases (methanol and water). A positive substrate bias (50 to 60 V) was found to be essential for the growth of diamond films onto substrates positioned 16 cm below the ECR plasma. The films were characterized by Raman, X-ray diffraction and scanning electron microscopy for microstructure, phase purity and chemical bonding characteristics. The effect of various processing parameters including gas pressure, gas composition, substrate temperature and bias have also been analyzed.

Using Electron Cyclotron Resonance Plasma for Depositing Epitaxial Titanium Nitride Thin Films

1995 ◽  
Vol 396 ◽  
Author(s):  
I.H. Murzin ◽  
N. Hayashi ◽  
I. Sakamoto
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Electron Cyclotron ◽  
X Ray Diffraction ◽  
Ecr Plasma ◽  
Positive Voltage

AbstractWe have employed a 2.45 GHz electron cyclotron resonance (ECR) plasma source to deposit single-crystal thin films of titanium nitride onto MgO substrates of (100) orientation. During deposition the ECR plasma beam delivering a mixture of excited species of molecular and atomic nitrogen ions, strikes a substrate while an electron beam deposits on the same substrate species of titanium. We have studied the formation of films at substrate temperatures of 200, 400, and 600°C, as well as at room temperature. X-Ray diffraction (XRD) revealed that a cubic Bl phase of titanium nitride forms predominantly at all the temperatures explored. Both channeling and Rutherford backscattering spectroscopy (RBS) showed epitaxial layers forming at the temperature as low as 400°C. The minimum relative backscattering yield, χmin decreased as the temperature increased, with the best result of 7.3% obtained for the film deposited at 600°C. Biasing the substrates with either negative or positive voltage at room temperature directly affects film crystallography.

Ion-Beam Polishing of Diamond Thin Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Dong-Gu Lee ◽  
Rajiv K. Singh
Keyword(s):  
Thin Films ◽  
Oxygen Plasma ◽  
Electron Cyclotron Resonance ◽  
Incident Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Diamond Films ◽  
Film Surface ◽  
Chemical Vapor ◽  
Diamond Thin Films

AbstractPlanarization of diamond thin films has been carried out using a remote electron cyclotron resonance (ECR) oxygen plasma under a negative bias. Diamond thin films were synthesized by hot filament chemical vapor deposition (HFCVD). The surface roughness (RJ of the diamond films could be considerably reduced from 0.2 μπι to 0.05 μπι using the ECR oxygen plasma. Low planarization and a high etching rate of diamond films were observed for an incident angle of the ion beam to the film surface normal below 45 degrees. High applied bias above -600 V caused secondary discharge effects, resulting in inhomogeneous etching. With an increase in incident angle, needlelike morphology was observed in the diamond film.

scholarly journals Surface Morphology and Microstructure of Al-O Alloys Grown by ECR Plasma Deposition

1995 ◽  
Vol 403 ◽  
Author(s):  
D. A. Marshall ◽  
J. C. Barbour ◽  
D. M. Follstaedt ◽  
A. J. Howard ◽  
R. J. Lad
Keyword(s):  
Surface Roughness ◽  
Deposition Temperature ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Plasma Deposition ◽  
Processing Parameters ◽  
Second Phase ◽  
Applied Bias ◽  
Force Microscopy ◽  
Ecr Plasma

AbstractThe growth of polycrystalline and amorphous aluminum-oxygen alloy films using electronbeam evaporation of Al in the presence of an O2 electron-cyclotron-resonance (ECR) plasma was investigated for film compositions varying from 40% Al (A12O3) to near 100% Al (A1Ox). Processing parameters such as deposition temperature and ion energy were varied to study their effects on surface texture and film microstructure. The Al-rich films (AlOx) contain polycrystalline fcc Al grains with finely dispersed second-phase particles of γ-A12O3 (1–2 nm in size). The surface roughness of these films was measured by atomic force microscopy and found to increase with sample bias and deposition temperature. Stoichiometric A12O3 films grown at 100°C and 400°C without an applied bias were amorphous, while an applied bias of -140 V formed a nanocrystalline γ-A12O3 film at 400°C. The surface roughness of the A12O3 increased with temperature while ion irradiation produced a smoother surface

Oxygen Effect in Diamond Deposition at Low Temperatures

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gas Mixtures ◽  
Diamond Growth ◽  
Oxygen Effect ◽  
Gas Mixture ◽  
Diamond Thin Films ◽  
Deposited Films

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

Preparation of pzt thin films on Pt/Ti/SiO2 and Pt/SiO2 Substrates by ECR Plasma Enhanced DC Magnetron Multi-target Reactive Sputtering

1996 ◽  
Vol 441 ◽  
Author(s):  
Sung-Tae Kim ◽  
Hyun-Ho Kim ◽  
Moon-Yong Lee ◽  
Won-Jong Lee
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Electron Cyclotron Resonance ◽  
Perovskite Phase ◽  
Early Stage ◽  
Reactive Sputtering ◽  
Deposition Process ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Ecr Plasma

AbstractPerovskite-phase lead zirconate titanate (PZT) thin films were fabricated at 4751C by the electron cyclotron resonance (ECR) plasma enhanced DC magnetron multi-target reactive sputtering method on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates. Stoichiometric perovskite PZT films were readily obtained on Pt/Ti/SiO2/Si substrates because Ti atoms which were out-diffused to the Pt surface facilitated Pb incorporation by forming lead titanate at the early stage of deposition process. Activation of oxygen by ECR plasma facilitated the oxidation reaction and Pb incorporation into the film. Thus perovskite-phase PZT can be obtained on the Pt/SiO2/Si substrate.

Measuring the Adhesion of Diamond Thin Films to Substrates Using the Blister Test

1995 ◽  
Vol 383 ◽  
Author(s):  
Jim Sizemore ◽  
R. J. Hohlfelder ◽  
J. J. Vlassak ◽  
W. D. Nix
Keyword(s):  
Thin Films ◽  
Test Data ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Simple Equation ◽  
Testing Technique ◽  
Blister Test ◽  
Plasma Enhanced Cvd ◽  
Si Substrates ◽  
Diamond Thin Films

ABSTRACTIt is shown that the blister testing technique can be used to measure the adhesion of thin films to their substrates. A brief discussion of blister test mechanics is presented here, leading to a simple equation relating adhesion to the height of the blister and the pressure causing it to grow. Blister test data for plasma-enhanced CVD diamond films on Si substrates have been analyzed using this relation. The tests show adhesion energies of 1.8– 2.6 J/m2.

Effects of Seeding Over the Microstructure and Stresses of Diamond Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
S. Gupta ◽  
G. Morell ◽  
R. S. Katiyar ◽  
D. R. Gilbert ◽  
R. K. Singh
Keyword(s):  
Electron Cyclotron Resonance ◽  
Raman Band ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Interfacial Stress ◽  
Intrinsic Stress ◽  
Seeding Density ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray

AbstractWe have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550–700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1 × 109 nuclei/cm2). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp3 phase, O/C ratio, and total intrinsic stress.

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