Properties of Doped a-Si:H Films Deposited by Ecr Plasma CVD

1990 ◽  
Vol 204 ◽  
Author(s):  
H. Murai ◽  
M. Hayama ◽  
K. Kobayashi ◽  
T. Yamazaki
Keyword(s):  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Dark Conductivity ◽  
Deposition Condition ◽  
Plasma Cvd ◽  
Film Properties ◽  
Plasma Properties ◽  
Hydrogen Incorporation ◽  
Ecr Plasma ◽  
Hydrogenated Amorphous

ABSTRACTPhosphorous doped hydrogenated amorphous silicon films were deposited by microwave electron cyclotron resonance (ECR) plasma CVD at a substrate temperature of 100°C. Electrical, optical and hydrogen-incorporation properties of the films have been investigated. By optimizing the deposition condition, the dark conductivity of 3×10−4S/cm is realized without subsequent annealing. Relations between the film properties and ECR plasma properties have been studied by means of optical emission spectroscopy (OES) and quadrupole mass spectroscopy (QMS).

High Rate Deposition of Hydrogenated Amorphous Silicon Films by ECR Plasma CVD

1989 ◽  
Vol 165 ◽  
Author(s):  
S. Ozaki ◽  
T. Akahori ◽  
T. Tani ◽  
S. Nakayama
Keyword(s):  
Amorphous Silicon ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Utilization Efficiency ◽  
High Rate ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Hydrogenated Amorphous

AbstractA new electron cyclotron resonance (ECR) plasma CVD system has been developed in order to obtain high deposition rates. By using this system, hydrogenated amorphous silicon (a-Si:H) films have been prepared at a deposition rate of 1.0. μ m/min. The utilization efficiency of SiH4 gas is 16% under such conditions. Films prepared at 1.0 μ m/min have high photoconductivity (σ ph) of 10-6 S/cm and low dark conductivity (σ d) of 10-12 S/cm, leading to a high photosensitivity of σ ph/σ d=106. Both high microwave power and high SiH4 gas flow rates are essential to the high rate deposition of sufficiently photosensitive a-Si:H films. Annealing at 300° C improves the photosensitivity up to σ ph/σ d=107.

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

Spectroscopy of Ecr Plasma Used for Depositing Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
Marsela Pontoh ◽  
Vikram L. Dalal ◽  
Neha Gandhi
Keyword(s):  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Surprising Result ◽  
Ion Density ◽  
Ecr Plasma ◽  
The Standard Model ◽  
Langmuir Probe Measurements ◽  
Si Films ◽  
Mass Spectrometery ◽  
Probe Measurements

AbstractElectron-cyclotron-resonance (ECR) plasma are used extensively to deposit amorphous and microcrystalline Si and (Si,Ge) films, and for depositing oxides and nitrides of Si. In this paper, we discuss the results of optical emission spectroscopy, Langmuir probe measurements and mass-spectrometery measurements of the ECR plasma when used to deposit a-Si films. We study He and H diluted plasmas. We find that the addition of hydrogen to the gas mixture immediately reduces the flux of the active (e.g. SiH, SiH2,SiH3) radicals and ions that are responsible for the growth of films. Thus, introducing hydrogen in the mixture reduces the growth rate significantly, not only because it etches the film during growth, but primarily because it reduces the production of the needed growth radicals. We find an excellent correlation between growth rates and SiH intensity signal. A surprising result is that the densities of all three ions, SiH, SiH2 and SiH3, arriving at the substrate are comparable in magnitude in this low pressure reactor, with the SiH ion density becoming larger than the SiH3 density at higher powers. This observation raises some doubt about the standard model for growth that states that SiH3 is the dominant radical responsible for growth during plasma CVD processes. We also find that decreasing the pressure increases the ratio of H/H2 arriving at the substrate, which in turn means that more H ions and atoms are available to do etching of the growing film and change its properties at lower pressures.

ECR Plasma Deposition of Dielectrics for Optoelectronic Applications

1989 ◽  
Vol 165 ◽  
Author(s):  
Steven Dzioba
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Plasma Source ◽  
Optoelectronic Device ◽  
Dielectric Films ◽  
Film Properties ◽  
Ecr Plasma ◽  
Device Applications ◽  
Inp Substrates

A UHV electron cyclotron resonance (ECR) plasma source has been used to deposit SiNx, SiOxNy and amorphous Si thin films on InP substrates for optoelectronic device applications. High quality dielectric films can be deposited at temperatures significantly lower than conventional techniques, namely less than 110°C. Selected applications pertinent to optoelectronic devices are used to establish the role of ion/electron fluxes in thin film properties.

Electron Cyclotron Resonance CVD of Silicon Oxynitride for Optoelectronic Applications

1993 ◽  
Vol 300 ◽  
Author(s):  
M. Boudreau ◽  
M. Boumerzoug ◽  
R. V. Kruzelecky ◽  
P. Mascher ◽  
P. E. Jessop ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Organic Liquid ◽  
Chemical Vapour ◽  
Optical Emission ◽  
Electron Cyclotron ◽  
Silicon Oxynitride ◽  
Ecr Plasma ◽  
Trade Name ◽  
Low Levels

ABSTRACTSilicon oxynitrides with compositions varying from Si3N4 to SiO2 were deposited on silicon substrates by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECRPECVD). The silicon source used is an organic liquid, Tris Dimethyl Amino Silane (trade name SiN – 1000TM). Optical emission spectroscopy is used to characterize the ECR plasma, this information then is correlated with the optical properties of the deposited film, as determined by in situ ellipsometry. Auger electron spectroscopy showed that only low levels of carbon (< 3 at%) are present. The SiO2 and Si3N4 films are close to stoichiometric, with low levels of bonded hydrogen as determined by infrared absorption spectroscopy.Planar waveguide structures were fabricated and tested using the prism coupling technique to determine the mode effective indices. These are compared to those expected from the ellipsometry measurements.

Amorphous Silicon-Carbon Alloys and Amorphous Carbon from Direct Methane and Ethylene Activation by ECR

1997 ◽  
Vol 467 ◽  
Author(s):  
J. P. Conde ◽  
V. Chu ◽  
F. Giorgis ◽  
C. F. Pirrt ◽  
S. Arekat
Keyword(s):  
Carbon Source ◽  
Amorphous Silicon ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Plasma Stream ◽  
Ecr Plasma ◽  
Silicon Carbon ◽  
Gas Flow Ratio ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition. Hydrogen is introduced into the source resonance cavity as an excitation gas. Silane is introduced in the main chamber in the vicinity of the plasma stream, whereas the carbon source gases, methane or ethylene, are introduced either with the silane or with the hydrogen as excitation gases. The effect of the type of carbon-source gas, excitation gas mixture and silane-to-carbon source gas flow ratio on the deposition rate, bandgap, subgap density of states, spin density and hydrogen evolution are studied.

Properties of amorphous silicon-germanium films and devices deposited at higher growth rates

2002 ◽  
Vol 715 ◽  
Author(s):  
Yong Liu ◽  
Vikram L. Dalal
Keyword(s):  
Amorphous Silicon ◽  
Growth Rates ◽  
Silicon Germanium ◽  
Urbach Energy ◽  
Dark Conductivity ◽  
Film Properties ◽  
Ecr Plasma ◽  
Device Properties ◽  
Amorphous Silicon Germanium ◽  
Defect Densities

AbstractWe report on the growth and properties of amorphous Silicon-Germanium [a–(Si,Ge):H] films and devices fabricated at growth rates of ∼ 5 Å/sec using a remote ECR plasma growth process. The films and devices were made using mixtures of germane and silane along with dilution with hydrogen and helium. The addition of He to the gas mixture significantly increased the growth rates. It was found that hydrogen was always necessary in order to achieve the best film and device properties. Films and devices were made across the entire bandgap range, from a-Si to a-Ge. High ratios of photo/dark conductivity and low values of Urbach energy ( > 50 meV) indicate good film properties. The defect densities were measured using space charge limited current techniques. The defect densities were in the range of 1-2 x 10 16/cm 3 –eV, about 5 times higher than for a-Si:H. Electron mobility-lifetime products were measured and found to be in the range of 2-4 x 10-7 cm2/V, even for low gap materials (1.35 eV). Single and graded gap devices were fabricated in these materials. Device fill factors of ∼ 70% were obtained in graded gap devices.

The Effects of the Addition of CF4, Cl2, and N2 TO O2 ECR Plasma on the ETCH Rate, Selectivity and Etched Profile of RuO2 Film

1997 ◽  
Vol 493 ◽  
Author(s):  
Eung-Jik Lee ◽  
Jong-Sam Kim ◽  
Jin-Woong Kim ◽  
Ki-Ho Baik ◽  
Won-Jong Lee
Keyword(s):  
Cyclotron Resonance ◽  
Emission Spectroscopy ◽  
Etch Rate ◽  
Oxygen Radicals ◽  
Optical Emission Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Quadrupole Mass ◽  
Plasma System ◽  
Ecr Plasma

ABSTRACTIn this study, we investigated the effects of the addition of CF4, Cl2, and N2 gases to oxygen electron cyclotron resonance (ECR) plasma on the reactive ion etching (RIE) properties of RuO2 film such as etch rate, selectivity, and etched profile. The concentration of the etching species in the plasma was analyzed with an optical emission spectroscopy (OES) and a quadrupole mass spectrometer (QMS). The etch product was also examined with QMS.The addition of a small amount of CF4, Cl2, or N2 to the O2 plasma increases the concentration of oxygen radicals and accordingly increases the etch rate of the RUO2 films appreciably. The etch rate of the RuO2 film was enhanced more with the addition of a small amount of CF4 and CI2 than with the addition of N2. On the contrary, the etched profile obtained in O2/N2 plasma was superior, without any damaged layer at the sidewall, to O2/CF4 and O2/Cl2 plasma. The selectivity of RuO2 to Si)2 mask was over 20:1 for each of the additive gas proportion at which the etch rate was maximum for each plasma system.

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