InNxSb1−x Light Emitting Diodes Grown by MBE

1999 ◽  
Vol 607 ◽  
Author(s):  
A. D. Johnson ◽  
R. H. Bennett ◽  
J. Newey ◽  
G J Pryce ◽  
G M Williams ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Electron Cyclotron Resonance ◽  
Secondary Ion Mass Spectrometry ◽  
Active Regions ◽  
Plasma Source ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Light Emitting ◽  
Ecr Plasma ◽  
Transmission Electron

We present the first reported MBE growth of light emitting diodes (LED's) with active regions made up of InSb/ InNxSbl−x (O<x<0.02) superlattices, grown onto InSb(100) substrates. Such dilute alloys of nitrogen in other III-V materials have been shown to exhibit very large bandgap bowing parameters due to differences in atomic size and the electro-negativity of nitrogen. Novel growth techniques have been developed to enable epitaxy of high quality InNxSbl−x, using an electron cyclotron resonance (ECR) plasma source. Material characterisation was performed by double crystal x-ray diffraction (DXRD) and transmission electron microscopy (TEM), and nitrogen composition has been determined using DXRD and secondary ion mass spectrometry (SIMS). To determine the effect of nitrogen on bandgap, the structures have been fabricated into LED's with InSb/InNxSbl−x superlattice active regions with period ∼1100A. For a nitrogen content of ∼0.3%, the peak emission of the diodes shifts from ∼6pm to >71µm at room temperature.

Using Electron Cyclotron Resonance Plasma for Depositing Epitaxial Titanium Nitride Thin Films

1995 ◽  
Vol 396 ◽  
Author(s):  
I.H. Murzin ◽  
N. Hayashi ◽  
I. Sakamoto
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Electron Cyclotron ◽  
X Ray Diffraction ◽  
Ecr Plasma ◽  
Positive Voltage

AbstractWe have employed a 2.45 GHz electron cyclotron resonance (ECR) plasma source to deposit single-crystal thin films of titanium nitride onto MgO substrates of (100) orientation. During deposition the ECR plasma beam delivering a mixture of excited species of molecular and atomic nitrogen ions, strikes a substrate while an electron beam deposits on the same substrate species of titanium. We have studied the formation of films at substrate temperatures of 200, 400, and 600°C, as well as at room temperature. X-Ray diffraction (XRD) revealed that a cubic Bl phase of titanium nitride forms predominantly at all the temperatures explored. Both channeling and Rutherford backscattering spectroscopy (RBS) showed epitaxial layers forming at the temperature as low as 400°C. The minimum relative backscattering yield, χmin decreased as the temperature increased, with the best result of 7.3% obtained for the film deposited at 600°C. Biasing the substrates with either negative or positive voltage at room temperature directly affects film crystallography.

scholarly journals SYNTHESIS OF CARBON NANOTUBES BY ECR PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION

2004 ◽  
Vol 03 (06) ◽  
pp. 845-851
Author(s):  
S. K. PATRA ◽  
G. MOHAN RAO
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Plasma Source ◽  
Ecr Plasma ◽  
Transmission Electron ◽  
Synthesis Of Carbon Nanotubes

Carbon nanotubes have been grown using electron cyclotron resonance (ECR) plasma source at a substrate temperature of 500°C. Methane has been used as the source gas. A network of carbon nanotubes have been observed in Scanning Electron Microscopy (SEM). Transmission Electron Microscopy (TEM) revealed that the structure consists of straight, Y-junction and ring-like nanotubes. Further, electron diffraction (ED) of the nanotubes confirms graphite crystal structure.

Hexagonal Pyramids Shaped GaN Light Emitting Diodes Array by N-polar Wet Etching

2013 ◽  
Vol 1538 ◽  
pp. 353-359
Author(s):  
Jun Ma ◽  
Liancheng Wang ◽  
Zhiqiang Liu ◽  
Guodong Yuan ◽  
Xiaoli Ji ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Active Regions ◽  
Wet Etching ◽  
Conductive Atomic Force Microscopy ◽  
Light Emitting ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Vertical Injection ◽  
Reduced Density

ABSTRACTIn this work, we investigated the influence of N-polar wet etching on the properties of nitride-based hexagonal pyramids array (HPA) vertical-injection light emitting diodes (V-LEDs). The cathodeluminescence images showed the randomly distribution of hexagonal pyramids with isolated active regions. The transmission electron microscopy images demonstrated the reduced density of threading dislocations. The IQE was estimated by temperature dependence of photoluminescence, which showed 30% increase for HPA V-LEDs compared with broad area (BA) V-LEDs. The improved extraction efficiency was verified by finite difference time domain simulation, which was 20% higher than that of roughened BA V-LEDs. The electrical properties of HPA V-LEDs were measured by conductive atomic force microscopy (CAFM) measurements. HPA V-LEDs exhibited much lower leakage current due to the improved crystal quality.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

1989 ◽  
Vol 162 ◽  
Author(s):  
Z. Sitar ◽  
M. J. Paisley ◽  
B. Yan ◽  
R. F. Davis
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Structural Defects ◽  
Effusion Cell ◽  
Gas Source ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Gas Source Mbe ◽  
Inversion Domain Boundaries ◽  
Resonance Plasma

ABSTRACTSingle crystal cubic or hexagonal GaN thin films have been grown on various substrates, using a modified gas source MBE technique. A standard effusion cell was employed for the evaporation of gallium. A compact electron cyclotron resonance plasma source was used to activate the nitrogen prior to deposition. The films were examined by transmission electron microscopy. The major defects in the wurtzite GaN were double positioning boundaries, inversion domain boundaries, and dislocations. The zinc-blende GaN showed microtwins, stacking faults, and dislocations. The connection between the observed structural defects and the poor electrical properties of GaN is noted.

Structure and Magnetic Properties of Fe-N Thin Films Grown by ECR Deposition

1999 ◽  
Vol 562 ◽  
Author(s):  
Š émeth ◽  
H. Akinaga ◽  
H. Boeve ◽  
H. Bender ◽  
J. de Boeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
High Vacuum ◽  
Plasma Source ◽  
Columnar Structure ◽  
Ultra High Vacuum ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe growth of FexNy thin films on GaAs, In0.2Ga0.8As, and SiO2/Si substrates using an ultra high-vacuum (UHV) deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma source is presented. The structural properties of the deposited films have been measured using various techniques as x-ray diffraction (XRD), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The results of XRD measurements show that the films consist of a combination of α-Fe, α'-Fe, y-Fe4N, and α”- Fe16N2 phases. The depth profiles, calculated from the Auger peak intensities, show a uniform nitrogen concentration through the films. The TEM reveals a columnar structure of these films. The properties of the different Fe-N layers have been exploited in the fabrication of Fe(N) / FexNy / Fe trilayer structures, where Fe(N) means a slightly nitrogen doped Fe film. The magneto-transport properties of this trilayer structure grown on In0.2Ga0.8As substrates are presented.

scholarly journals Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 492 ◽  
Author(s):  
Ha Quoc Thang Bui ◽  
Ravi Teja Velpula ◽  
Barsha Jain ◽  
Omar Hamed Aref ◽  
Hoang-Duy Nguyen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Active Regions ◽  
Core Shell ◽  
Next Generation ◽  
Light Emitting ◽  
Full Color

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

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