Oxygen Effect in Diamond Deposition at Low Temperatures

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gas Mixtures ◽  
Diamond Growth ◽  
Oxygen Effect ◽  
Gas Mixture ◽  
Diamond Thin Films ◽  
Deposited Films

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

Adhesion and Young's Modulus of CVD Diamond Thin Films Grown Over Various Substrates

1995 ◽  
Vol 383 ◽  
Author(s):  
R. Ramesham ◽  
R. F. Askew ◽  
M. F. Rose
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Microwave Plasma ◽  
Young's Modulus ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Gas Mixture ◽  
Cantilever Beams ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

ABSTRACTDiamond films were deposited by microwave plasma CVD using H2 and CH4 gas mixture over various substrate materials such as Si, Pd, Be, Cu, Mo, AIN, SiO2, Si3N4, Al2O3, Sapphire, Quartz, Ni-base alloys, single crystal Ni, boron nitride, and Ti. We have used a Z-axis pull stud test to determine adhesion strength of diamond film to some of the substrates. Our observations on the adhesion of diamond films to the above substrates are reported. A method will be described to evaluate Young's modulus of CVD diamond films using fabricated diamond cantilever beams.

Effect of Oxygen on the Textured Diamond Growth over Nickel Substrates

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Ramesham ◽  
M. F. Rose ◽  
R. F. Askew ◽  
M. Bozack
Keyword(s):  
Etch Rate ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Diamond Growth ◽  
Entire Surface ◽  
Raman Analysis ◽  
Nickel Substrates ◽  
Effect Of Oxygen ◽  
Deposited Films

ABSTRACTMicrowave plasma has been used to grow diamond films using CH4 and H2 over nickel substrates. Nucleation of the diamond has been achieved by manual scratching and ultrasonic agitation of the substrates. The substrate was left in the H 2 microwave plasma to remove any oxide film present prior to the diamond growth. According to SEM the morphology of the grown films was (100) textured over the entire surface. Our interest is to study the effect of O2 on the growth rate and the morphology of as-deposited diamond films. Infact, O2 has a tendency to preferentially etch the diamond (etch rate: 111 > 110 >100). Injection of O2 into the reaction mixture could enhance the 100 texture further. Raman analysis confirms the deposited films as diamond. Effect of O2 on the nature of the films and the characterization of as-deposited films is described.

Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition

2016 ◽  
Vol 15 (4) ◽  
pp. 614-618 ◽  
Author(s):  
Hideyuki Watanabe ◽  
Hitoshi Umezawa ◽  
Toyofumi Ishikawa ◽  
Kazuki Kaneko ◽  
Shinichi Shikata ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Centers ◽  
Diamond Thin Films

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2020 ◽  
Vol 22 (12) ◽  
pp. 2138-2146 ◽  
Author(s):  
G. Shu ◽  
V. G. Ralchenko ◽  
A. P. Bolshakov ◽  
E. V. Zavedeev ◽  
A. A. Khomich ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Surface Relief ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Step Growth ◽  
Growth Features

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.

scholarly journals Synthesis of nanocrystalline diamond thin films from an Ar–CH4 microwave plasma

1998 ◽  
Vol 83 (1) ◽  
pp. 540-543 ◽  
Author(s):  
D. Zhou ◽  
T. G. McCauley ◽  
L. C. Qin ◽  
A. R. Krauss ◽  
D. M. Gruen
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Nanocrystalline Diamond ◽  
Diamond Thin Films

Measuring the Adhesion of Diamond Thin Films to Substrates Using the Blister Test

1995 ◽  
Vol 383 ◽  
Author(s):  
Jim Sizemore ◽  
R. J. Hohlfelder ◽  
J. J. Vlassak ◽  
W. D. Nix
Keyword(s):  
Thin Films ◽  
Test Data ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Simple Equation ◽  
Testing Technique ◽  
Blister Test ◽  
Plasma Enhanced Cvd ◽  
Si Substrates ◽  
Diamond Thin Films

ABSTRACTIt is shown that the blister testing technique can be used to measure the adhesion of thin films to their substrates. A brief discussion of blister test mechanics is presented here, leading to a simple equation relating adhesion to the height of the blister and the pressure causing it to grow. Blister test data for plasma-enhanced CVD diamond films on Si substrates have been analyzed using this relation. The tests show adhesion energies of 1.8– 2.6 J/m2.

Selective and low temperature synthesis of polycrystalline diamond

1991 ◽  
Vol 6 (6) ◽  
pp. 1278-1286 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis ◽  
D.A. Jaworske ◽  
W. Baugh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Plasma ◽  
Diamond Particle ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Crystal Silicon ◽  
Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

Quantitative Adhesion Measures of Diamond Films Using A Blister Test

2007 ◽  
Vol 329 ◽  
pp. 551-556
Author(s):  
Xiao Gang Jian ◽  
L.D. Shi ◽  
Ming Chen ◽  
Fang Hong Sun
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Adhesive Strength ◽  
Diamond Films ◽  
Free Standing ◽  
Adhesion Properties ◽  
Blister Test ◽  
Diamond Thin Film ◽  
Diamond Thin Films ◽  
Micrometer Scale

Adhesion properties of diamond thin films are essential to their performance in technical applications. To obtain the adhesive strength precisely and quantitatively has been the frontier issue to the related scientists and engineers. In this paper, a new experimental equipment for blister tests was designed purposely and fabricated considering related influencing facts. A free-standing window of diamond thin film with the support of silicon wafer was obtained by the aid of photolithography and anisotropic wet etching technology so as to improve the precision of quantitative adhesion measures of diamond films. The mechanics for calculating the quantitative driving force of blister-induced delamination of diamond thin film is presented, which is on base of intensive modeling and simulation. The laser interferometer measurement with fine solution was used to pick up dynamic signals of diamond thin film bulge deformation in micrometer scale and the relationship demonstration of stress to strain of the diamond thin film was available, as a consequence, the adhesive strength could be obtained precisely and quantitatively by the valid model. The paper confirms the accessibility to precise quantitative adhesion measures of diamond films and the results will be beneficial to wide application of diamond thin films in the related fields.

Sign in / Sign up

Export Citation Format

Share Document