scholarly journals Synthesis of nanocrystalline diamond thin films from an Ar–CH4 microwave plasma

1998 ◽  
Vol 83 (1) ◽  
pp. 540-543 ◽  
Author(s):  
D. Zhou ◽  
T. G. McCauley ◽  
L. C. Qin ◽  
A. R. Krauss ◽  
D. M. Gruen
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Nanocrystalline Diamond ◽  
Diamond Thin Films

NANOCRYSTALLINE DIAMOND THIN FILMS AS INFRARED OPTICAL PROTECTIVE COATINGS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1013-1017 ◽  
Author(s):  
JINGQI LI ◽  
DEYAN HE ◽  
WANTU GUO ◽  
JIHUA ZHANG ◽  
YINING SUN ◽  
...  
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Protective Coatings ◽  
Chemical Vapor ◽  
Surface Damage ◽  
Nanocrystalline Diamond ◽  
Diamond Surface ◽  
Infrared Transmission ◽  
Infrared Wavelength ◽  
Diamond Thin Films

Nanocrystalline diamond thin films have been grown on both sides of Si wafer by microwave plasma-enhanced chemical vapor deposition using a mixture of CH4 and H2 as source gas. It was shown that infrared transmission of Si has been greatly enhanced and the maximum transmittance reaches 85%. By optimizing the film thickness, we can obtain the maximum increment in the desired infrared wavelength range. Sand spraying test showed that, while the bare Si substrate exhibited obvious surface damage, no damage could be observed on the diamond surface after the sand spraying. The results confirm that the nanocrystalline diamond films coated on Si can not only increase the infrared transmission but also act as a protective coating.

Photoemission properties of nanocrystalline diamond thin films on silicon

2015 ◽  
Vol 33 (3) ◽  
pp. 03C105 ◽  
Author(s):  
Jean-Paul Mazellier ◽  
Cyril Di Giola ◽  
Pierre Legagneux ◽  
Clément Hébert ◽  
Emmanuel Scorsone ◽  
...  
Keyword(s):  
Thin Films ◽  
Nanocrystalline Diamond ◽  
Diamond Thin Films

Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition

2016 ◽  
Vol 15 (4) ◽  
pp. 614-618 ◽  
Author(s):  
Hideyuki Watanabe ◽  
Hitoshi Umezawa ◽  
Toyofumi Ishikawa ◽  
Kazuki Kaneko ◽  
Shinichi Shikata ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Centers ◽  
Diamond Thin Films

Oxygen Effect in Diamond Deposition at Low Temperatures

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gas Mixtures ◽  
Diamond Growth ◽  
Oxygen Effect ◽  
Gas Mixture ◽  
Diamond Thin Films ◽  
Deposited Films

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

Electrical property dependence on thickness and morphology of nanocrystalline diamond thin films

2009 ◽  
Vol 40 (3) ◽  
pp. 615-617 ◽  
Author(s):  
T. Ižák ◽  
M. Vojs ◽  
M. Veselý ◽  
J. Škriniarová ◽  
I. Novotný ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Property ◽  
Nanocrystalline Diamond ◽  
Diamond Thin Films

Si-related color centers in nanocrystalline diamond thin films

2014 ◽  
Vol 251 (12) ◽  
pp. 2603-2606 ◽  
Author(s):  
Štěpán Potocký ◽  
Jakub Holovský ◽  
Zdeněk Remeš ◽  
Martin Müller ◽  
Jan Kočka ◽  
...  
Keyword(s):  
Thin Films ◽  
Nanocrystalline Diamond ◽  
Color Centers ◽  
Diamond Thin Films

Selective and low temperature synthesis of polycrystalline diamond

1991 ◽  
Vol 6 (6) ◽  
pp. 1278-1286 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis ◽  
D.A. Jaworske ◽  
W. Baugh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Plasma ◽  
Diamond Particle ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Crystal Silicon ◽  
Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

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