Effect of Oxygen on the Textured Diamond Growth over Nickel Substrates

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Ramesham ◽  
M. F. Rose ◽  
R. F. Askew ◽  
M. Bozack
Keyword(s):  
Etch Rate ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Diamond Growth ◽  
Entire Surface ◽  
Raman Analysis ◽  
Nickel Substrates ◽  
Effect Of Oxygen ◽  
Deposited Films

ABSTRACTMicrowave plasma has been used to grow diamond films using CH4 and H2 over nickel substrates. Nucleation of the diamond has been achieved by manual scratching and ultrasonic agitation of the substrates. The substrate was left in the H 2 microwave plasma to remove any oxide film present prior to the diamond growth. According to SEM the morphology of the grown films was (100) textured over the entire surface. Our interest is to study the effect of O2 on the growth rate and the morphology of as-deposited diamond films. Infact, O2 has a tendency to preferentially etch the diamond (etch rate: 111 > 110 >100). Injection of O2 into the reaction mixture could enhance the 100 texture further. Raman analysis confirms the deposited films as diamond. Effect of O2 on the nature of the films and the characterization of as-deposited films is described.

Oxygen Effect in Diamond Deposition at Low Temperatures

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gas Mixtures ◽  
Diamond Growth ◽  
Oxygen Effect ◽  
Gas Mixture ◽  
Diamond Thin Films ◽  
Deposited Films

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2020 ◽  
Vol 22 (12) ◽  
pp. 2138-2146 ◽  
Author(s):  
G. Shu ◽  
V. G. Ralchenko ◽  
A. P. Bolshakov ◽  
E. V. Zavedeev ◽  
A. A. Khomich ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Surface Relief ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Step Growth ◽  
Growth Features

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.

Energetic Deposition and Surface Characterization of Thin Carbon Films on Nickel

1998 ◽  
Vol 12 (10) ◽  
pp. 383-391
Author(s):  
K. P. Adhi ◽  
A. K. Sharma ◽  
S. S. Wagal ◽  
D. S. Joag ◽  
S. K. Kulkarni
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Characterization ◽  
Carbon Films ◽  
Polycrystalline Nickel ◽  
Thin Carbon ◽  
Nickel Substrates ◽  
Phase Surface ◽  
Electron Energy Loss ◽  
Deposited Films

Thin films deposited by rapidly quenching the energetic carbon species impinging onto polycrystalline nickel substrates were studied by X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS), and field ion microscopy (FIM). XPS and EELS of the deposited films, when compared with those recorded for graphite and synthetic diamond, indicated the growth of diamond like carbon films and amorphic diamond (a-D) phase. Surface atomic arrangement in the film is observed by FIM which magnifies the surface ~105 to 106 times. Facetting, lack of graphitic ordering, stability of the image inspite of raising or lowering the voltage about the field evaporation voltage indicate that the field ion micrograph is that of a-D.

X-ray Photoelectron Spectroscopy of the Interface Between Diamond Films and Tantalum Substrates

1993 ◽  
Vol 317 ◽  
Author(s):  
M.M. Waitew ◽  
S. Ismat Shah
Keyword(s):  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Stages Of Growth ◽  
Diamond Peak

ABSTRACTDiamond films were deposited in a microwave plasma chemical vapor deposition (MPCVD) system on Ta substrates using a mixture of hydrogen and methane gases. The films were grown for varying lengths of time to provide samples with no diamond growth to a continuous diamond film. These films were analyzed using X-ray photoelectron spectroscopy (XPS) in order to understand the time dependent interactions between the substrate and the incoming carbon flux. Photoelectron peaks in the Ta 4f, C Is and Ols regions have been analyzed. In the initial stages of growth, a layer of carbide forms on the substrate. As the substrate becomes supersaturated with carbon, graphite starts to form on the surface. A diamond peak begins to appear after about 30 Minutes of deposition.

A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

1997 ◽  
Vol 12 (10) ◽  
pp. 2686-2698 ◽  
Author(s):  
L. Fayette ◽  
B. Marcus ◽  
M. Mermoux ◽  
N. Rosman ◽  
L. Abello ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sequential Analysis ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Internal Stresses ◽  
Nucleation Density ◽  
Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

Diamond growth on carbide surfaces using a selective etching technique

1994 ◽  
Vol 9 (8) ◽  
pp. 2154-2163 ◽  
Author(s):  
K.J. Grannen ◽  
R.P.H. Chang
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Nucleation And Growth ◽  
Diamond Growth ◽  
Etching Technique ◽  
Diamond Nucleation ◽  
Nucleation And Growth Mechanism

Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pretreatment is necessary to grow these films with a (100) faceted surface morphology. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves etching of the noncarbon component of the carbide by atomic fluorine to expose surface carbon atoms and diamond nucleation and growth on these exposed carbon atoms. Hydrogen is necessary in the growth process to limit the rapid etching of the carbide substrates by corrosive fluorine atoms.

Characterization of chemical bonding and physical characteristics of diamond-like amorphous carbon and diamond films

1992 ◽  
Vol 7 (2) ◽  
pp. 404-410 ◽  
Author(s):  
Bharat Bhushan ◽  
Andrew J. Kellock ◽  
Nam-Hee Cho ◽  
Joel W. Ager
Keyword(s):  
Chemical Vapor Deposition ◽  
Physical Properties ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Bulk Diamond

Diamond-like (amorphous) carbon (DLC) films were prepared by dc magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) and diamond films were prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). For the first time, chemical and mechanical characterization of the films from each category are carried out systematically and a comparison of the chemical and physical properties is provided. We find that DLC coatings produced by PECVD are superior in microhardness and modulus of elasticity to those produced by sputtering. PECVD films contain a larger fraction of sp3-bonding than the sputtered hydrogenated carbon films. Chemical and physical properties of the diamond films appear to be close to those of bulk diamond.

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