scholarly journals Morphological Transition in Diamond Thin-Films Induced by Boron in a Microwave Plasma Deposition Process

Materials ◽  
2017 ◽  
Vol 10 (11) ◽  
pp. 1305 ◽  
Author(s):  
Paul Baker ◽  
David Goodloe ◽  
Yogesh Vohra
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Plasma Deposition ◽  
Deposition Process ◽  
Morphological Transition ◽  
Diamond Thin Films

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition

2016 ◽  
Vol 15 (4) ◽  
pp. 614-618 ◽  
Author(s):  
Hideyuki Watanabe ◽  
Hitoshi Umezawa ◽  
Toyofumi Ishikawa ◽  
Kazuki Kaneko ◽  
Shinichi Shikata ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Centers ◽  
Diamond Thin Films

Oxygen Effect in Diamond Deposition at Low Temperatures

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gas Mixtures ◽  
Diamond Growth ◽  
Oxygen Effect ◽  
Gas Mixture ◽  
Diamond Thin Films ◽  
Deposited Films

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

scholarly journals Synthesis of nanocrystalline diamond thin films from an Ar–CH4 microwave plasma

1998 ◽  
Vol 83 (1) ◽  
pp. 540-543 ◽  
Author(s):  
D. Zhou ◽  
T. G. McCauley ◽  
L. C. Qin ◽  
A. R. Krauss ◽  
D. M. Gruen
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Nanocrystalline Diamond ◽  
Diamond Thin Films

Selective and low temperature synthesis of polycrystalline diamond

1991 ◽  
Vol 6 (6) ◽  
pp. 1278-1286 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis ◽  
D.A. Jaworske ◽  
W. Baugh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Plasma ◽  
Diamond Particle ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Crystal Silicon ◽  
Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

Remote Ecr Plasma Deposition of Diamond Thin Films from Water-Methanol Mixtures

1992 ◽  
Vol 242 ◽  
Author(s):  
R. K. Singh ◽  
D. Gilbert ◽  
R. Tellshow ◽  
R. Koba ◽  
R. Ochoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Diamond Films ◽  
Processing Parameters ◽  
Gas Composition ◽  
X Ray Diffraction ◽  
Ecr Plasma ◽  
Diamond Thin Films ◽  
Bonding Characteristics

ABSTRACTWe have applied an electron cyclotron resonance technique to deposit diamond thin films on various substrates under remote plasma, low temperature (600°C) and low pressure (60 mTorr) conditions. Diamond films were grown on different substrates (silicon, molybdenum) with varying concentrations of precursor gases (methanol and water). A positive substrate bias (50 to 60 V) was found to be essential for the growth of diamond films onto substrates positioned 16 cm below the ECR plasma. The films were characterized by Raman, X-ray diffraction and scanning electron microscopy for microstructure, phase purity and chemical bonding characteristics. The effect of various processing parameters including gas pressure, gas composition, substrate temperature and bias have also been analyzed.

Cutting performance of tungsten carbide tools coated with diamond thin films after etching for various times

2018 ◽  
Vol 32 (20) ◽  
pp. 1850236 ◽  
Author(s):  
Jong Seok Kim ◽  
Yeong Min Park ◽  
Mun Ki Bae ◽  
Chi Whan Kim ◽  
Dae Weon Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Tungsten Carbide ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Cutting Performance ◽  
Etching Time ◽  
Cutting Test ◽  
Reinforced Plastic ◽  
Coated Tool ◽  
Diamond Thin Films

In this study, diamond thin films were deposited on tungsten carbide tools using surface-wave plasma-enhanced chemical vapor deposition (SWP-CVD). To eliminate the adverse effects of cobalt on the diamond deposition process, the cobalt was removed from the surface of the tools by etching with Murakami’s reagent for various times (30, 60, and 120 min). The cutting performance of the untreated and the diamond-coated WC tools was examined by performing cutting test on carbon fiber-reinforced plastic (CFRP). The results showed that all the diamond-coated tools exhibited great improvement on the durability and wear resistance compared to the uncoated one. In addition, the diamond-coated tool lift time is found to be proportional to the etching time. An increase more than twofold has been achieved when the etch time was increased from 30 min to 120 min.

scholarly journals Morphology and Electron Emission Properties of Nanocrystalline CVD Diamond Thin Films

1997 ◽  
Vol 495 ◽  
Author(s):  
Alan R. Krauss ◽  
Dieter M. Gruen ◽  
Daniel Zhou ◽  
Thomas G. Mccauley ◽  
Lu Chang Qin ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Hydrogen Concentration ◽  
Electron Emission ◽  
Microwave Plasma ◽  
Initial Growth ◽  
Average Grain Size ◽  
Diamond Thin Films

ABSTRACTNanocrystalline diamond thin films have been produced by microwave plasma-enhanced chemical vapor deposition (MPECVD) using C60/Ar/H2 or CH4/Ar/H2 plasmas. Films grown with H2 concentration ≤ 20% are nanocrystalline, with atomically abrupt grain boundaries and without observable graphitic or amorphous carbon phases. The growth and morphology of these films are controlled via a high nucleation rate resulting from low hydrogen concentration in the plasma. Initial growth is in the form of diamond, which is the thermodynamic equilibrium phase for grains < 5 nm in diameter. Once formed, the diamond phase persists for grains up to at least 15–20 nm in diameter. The renucleation rate in the near-absence of atomic hydrogen is very high (∼1010 cm2sec−1), limiting the average grain size to a nearly constant value as the film thickness increases, although the average grain size increases as hydrogen is added to the plasma. For hydrogen concentrations less than ∼20%, the growth species is believed to be the carbon dimer, C2, rather than the CH3* growth species associated with diamond film growth at higher hydrogen concentrations. For very thin films grown from the C60 precursor, the threshold field (2 to ∼60 volts/micron) for cold cathode electron emission depends on the electrical conductivity and on the surface topography, which in turn depends on the hydrogen concentration in the plasma. A model of electron emission, based on quantum well effects at the grain boundaries is presented. This model predicts promotion of the electrons at the grain boundary to the conduction band of diamond for a grain boundary width ∼3–4 Å, a value within the range observed by TEM.

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