Adhesion and Young's Modulus of CVD Diamond Thin Films Grown Over Various Substrates

1995 ◽  
Vol 383 ◽  
Author(s):  
R. Ramesham ◽  
R. F. Askew ◽  
M. F. Rose

ABSTRACTDiamond films were deposited by microwave plasma CVD using H2 and CH4 gas mixture over various substrate materials such as Si, Pd, Be, Cu, Mo, AIN, SiO2, Si3N4, Al2O3, Sapphire, Quartz, Ni-base alloys, single crystal Ni, boron nitride, and Ti. We have used a Z-axis pull stud test to determine adhesion strength of diamond film to some of the substrates. Our observations on the adhesion of diamond films to the above substrates are reported. A method will be described to evaluate Young's modulus of CVD diamond films using fabricated diamond cantilever beams.

Vacuum ◽  
2018 ◽  
Vol 147 ◽  
pp. 134-142 ◽  
Author(s):  
J. Weng ◽  
F. Liu ◽  
L.W. Xiong ◽  
J.H. Wang ◽  
Q. Sun

1996 ◽  
Vol 47 (7) ◽  
pp. 611-615
Author(s):  
Hiroyuki TANAKA ◽  
Toshiaki TANAKA ◽  
Hideaki SOHMA ◽  
Masato YOSHIDA ◽  
Akira SAKAI ◽  
...  

2019 ◽  
Vol 92 ◽  
pp. 41-46 ◽  
Author(s):  
Yohei Harada ◽  
Ryota Hishinuma ◽  
Nicolae Spătaru ◽  
Yusei Sakurai ◽  
Kazuya Miyasaka ◽  
...  

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).


2012 ◽  
Vol 249 (12) ◽  
pp. 2612-2615 ◽  
Author(s):  
Štěpán Potocký ◽  
Oleg Babchenko ◽  
Karel Hruška ◽  
Alexander Kromka

1986 ◽  
Vol 25 (Part 2, No. 10) ◽  
pp. L808-L810 ◽  
Author(s):  
Akira Ono ◽  
Tetsuya Baba ◽  
Hiroyuki Funamoto ◽  
Akira Nishikawa

Sign in / Sign up

Export Citation Format

Share Document