High Quality Si and Sil-xGex, Films and Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD)

1989 ◽  
Vol 146 ◽  
Author(s):  
M. L. Green ◽  
D. Brasen ◽  
H. Temkin ◽  
V. C. Kannan ◽  
H. S. Luftman
Keyword(s):  
Chemical Vapor Deposition ◽  
Heterojunction Bipolar Transistors ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Processing Technique ◽  
Thin Layers ◽  
High Quality ◽  
Power Switching ◽  
Thermal Chemical Vapor Deposition

ABSTRACTRapid thermal chemical vapor deposition (RTCVD) is a processing technique that results from the combination of radiant heating lamps and a CVD chamber. It is the ultimate cold-wall CVD reactor and allows one to clean wafers in-situ and immediately thereafter deposit epitaxial layers. Very thin layers (<100 Å) can be deposited by either gas or lamp power switching. We report here the growth of high quality Si and Si-Ge layers, both intrinsic and in-situ doped, and the in-situ growth of a heterojunction bipolar transistor. These HJBT's show gains as high as 350 and are promising as microwave transistors. RTCVD processing is a production-worthy technology that will play an important role in the manufacture of future heterostructural devices.

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

1992 ◽  
Vol 21 (1) ◽  
pp. 61-64 ◽  
Author(s):  
M. Sanganeria ◽  
D. T. Grider ◽  
M. C. öztürk ◽  
J. J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

Improvement of crystallinity of epitaxial Si1−xGex films with SiH4 treatment in in-situ rapid thermal chemical vapor deposition

1992 ◽  
Vol 60-61 ◽  
pp. 597-601
Author(s):  
Kinya Ashikaga ◽  
Morifumi Ohno ◽  
Toshiyuki Nakamura ◽  
Hisashi Fukuda ◽  
Seigo Ohno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

A Novel Implantation Free Raised Source/Drain Mosfet Process Using Selective Rapid Thermal Chemical Vapor Deposition Of In-Situ Boron Doped SixGe1-x

1993 ◽  
Vol 303 ◽  
Author(s):  
Xiaowei Ren ◽  
Mehmet C. Öztürk ◽  
Douglas T. Grider ◽  
Mahesh Sanganeria ◽  
Stanton Ashburn
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sacrificial Layer ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Mos Transistors ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

ABSTRACTIn this paper, we report electrical characterization of raised source/drain MOS transistors fabricated using selectively deposited, in-situ boron doped SixGe1-x as a solid diffusion source to form the source/drain junctions. The alloy can be deposited with an enhanced selectivity at temperatures as low as 600°C resulting in an abrupt doping profile at the SixGe1-x/Si interface. After deposition, junctions are formed by diffusion of boron from the deposited layer into the silicon substrate. The selectively deposited alloy can serve as a sacrificial layer for self-aligned silicide formation elimintaing the problem of silicon consumption in the substrate. In this work, selective depositions were performed in a typical cold-walled, lamp heated rapid thermal chemical vapor deposition (RTCVD) system at ∼ 610 °C using SiH2C12, GeH4 and B2H6 as the reactive gases. Using this process, MOS transistors with effective channel lengths down to 0.45 gtm were successfully fabricated.

Synthesis of high-quality graphene films on nickel foils by rapid thermal chemical vapor deposition

Carbon ◽  
2012 ◽  
Vol 50 (2) ◽  
pp. 551-556 ◽  
Author(s):  
L. Huang ◽  
Q.H. Chang ◽  
G.L. Guo ◽  
Y. Liu ◽  
Y.Q. Xie ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition ◽  
Graphene Films

The Growth of β-SiC on Si and Poly-Si on β-SiC by Rapid Thermal Chemical Vapor Deposition

1997 ◽  
Vol 470 ◽  
Author(s):  
C. W. Liu ◽  
J. C. Sturm
Keyword(s):  
Chemical Vapor Deposition ◽  
Heterojunction Bipolar Transistors ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Initial Growth ◽  
Initial Surface ◽  
Single Crystalline ◽  
Thermal Chemical Vapor Deposition ◽  
Si Films

ABSTRACTThe growth properties of β-SiC on (100) Si grown by rapid thermal chemical vapor deposition, using a single precursor (methylsilane) without an initial surface carbonization step, were investigated. An optimun growth temperature at 800°C was found to grow single crystalline SiC. The single crystalline SiC films were used to be the buffer layers for the growth of subsequent poly Si films. For the poly Si grown at low temperature (625°C), the (110) Si diffraction was found to be the dominant peak in the X-ray diffraction spectra at the initial growth stage, while the poly Si grown on oxide was dominated by (111) texture. A small average misfit (4 %) between (110) Si planes and (100) SiC planes was proposed to explain this effect. To apply the Si/SiC/Si multilayers, SiC/Si heterojunction bipolar transistors (HBT's) were fabricated and compared to Si bipolar junction transistors.

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