Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics

2002 ◽  
Vol 92 (5) ◽  
pp. 2807-2809 ◽  
Author(s):  
S. J. Lee ◽  
T. S. Jeon ◽  
D. L. Kwong ◽  
R. Clark
1994 ◽  
Vol 33 (Part 1, No. 6A) ◽  
pp. 3339-3342 ◽  
Author(s):  
Tetsuya Satake ◽  
Tetsuji Sorita ◽  
Hirofumi Fujioka ◽  
Hiroshi Adachi ◽  
Hiroyuki Nakajima

2019 ◽  
Vol 9 (2) ◽  
pp. 119-126 ◽  
Author(s):  
Sivamaran Venkatesan ◽  
Balasubramanian Visvalingam ◽  
Gopalakrishnan Mannathusamy ◽  
Viswabaskaran Viswanathan ◽  
A. Gourav Rao

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