High Quality Si and Si-based Heterostructures And Devices Produced By Rapid Thermal Chemical Vapor Deposition (RTCVD)

1990 ◽  
Author(s):  
Martin L. Green ◽  
H. Temkin ◽  
D. Brasen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition

Synthesis of high-quality graphene films on nickel foils by rapid thermal chemical vapor deposition

Carbon ◽  
2012 ◽  
Vol 50 (2) ◽  
pp. 551-556 ◽  
Author(s):  
L. Huang ◽  
Q.H. Chang ◽  
G.L. Guo ◽  
Y. Liu ◽  
Y.Q. Xie ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition ◽  
Graphene Films

Fabrication of high-quality graphene by hot-filament thermal chemical vapor deposition

Carbon ◽  
2015 ◽  
Vol 86 ◽  
pp. 1-11 ◽  
Author(s):  
Syed Muhammad Hafiz ◽  
Su Kong Chong ◽  
Nay Ming Huang ◽  
Saadah Abdul Rahman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition ◽  
Hot Filament

High Quality Si and Sil-xGex, Films and Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD)

1989 ◽  
Vol 146 ◽  
Author(s):  
M. L. Green ◽  
D. Brasen ◽  
H. Temkin ◽  
V. C. Kannan ◽  
H. S. Luftman
Keyword(s):  
Chemical Vapor Deposition ◽  
Heterojunction Bipolar Transistors ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Processing Technique ◽  
Thin Layers ◽  
High Quality ◽  
Power Switching ◽  
Thermal Chemical Vapor Deposition

ABSTRACTRapid thermal chemical vapor deposition (RTCVD) is a processing technique that results from the combination of radiant heating lamps and a CVD chamber. It is the ultimate cold-wall CVD reactor and allows one to clean wafers in-situ and immediately thereafter deposit epitaxial layers. Very thin layers (<100 Å) can be deposited by either gas or lamp power switching. We report here the growth of high quality Si and Si-Ge layers, both intrinsic and in-situ doped, and the in-situ growth of a heterojunction bipolar transistor. These HJBT's show gains as high as 350 and are promising as microwave transistors. RTCVD processing is a production-worthy technology that will play an important role in the manufacture of future heterostructural devices.

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

1996 ◽  
Vol 25 (3) ◽  
pp. 527-535 ◽  
Author(s):  
Veena Misra ◽  
Xiaoli Xu ◽  
Brian E. Hornung ◽  
Richard T. Kuehn ◽  
Donald S. Miles ◽  
...  
Keyword(s):  
Nitrous Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition

High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane

1995 ◽  
Vol 67 (2) ◽  
pp. 259-261 ◽  
Author(s):  
J. Mi ◽  
P. Warren ◽  
P. Letourneau ◽  
M. Judelewicz ◽  
M. Gailhanou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition
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