Pulsed Ion Beam Interface Melting of Ptcr and Crta Alloys on Si Structures

1982 ◽  
Vol 13 ◽  
Author(s):  
C. J. Palmstrom ◽  
R. Fastow
Keyword(s):  
Phase Separation ◽  
Thermal Annealing ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Composition Profiles ◽  
Backscattering Analysis

ABSTRACTComposition profiles of thermal and pulsed ion beam annealed PtCr/Si and CrTa/Si have been determined using Rutherford backscattering analysis. Thermal annealing resulted in layered phase separation with Pt-silicide in the PtCr/Si case, and CrSi 2 in the CrTa/Si case, forming at the Si surface. Pulsed ion beam annealing, 300–380 keV protons at energy densities ~0.75–1.6 J/cm2 , produced interface melting with no layered phase separation.

scholarly journals Ion Beam-Induced Changes in Optical Properties of MgO

1995 ◽  
Vol 396 ◽  
Author(s):  
Ying Qian ◽  
D. Ila ◽  
K. X. He ◽  
M. Curley ◽  
D. B. Poker ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Sample Characterization ◽  
Ag Clusters ◽  
Induced Changes ◽  
Optical Spectrophotometry

AbstractThe implantation of Ag into MgO (100) single crystals, followed by thermal annealing at 1100°C, leads to dramatic changes in their optical properties. The changes in the optical properties are due to the presence of small Ag clusters which are formed in the annealed samples. The small Ag clusters are obtained by thermal annealing of the implanted MgO crystals between 600°C and 1100°C to investigate the changes in cluster sizes and to correlate with changes in their optical properties. Sample characterization is carried out using optical spectrophotometry to confirm the effective presence of Ag clusters and Rutherford Backscattering Spectrometry (RBS) to study the profile of Ag clusters.

Ion-Beam Induced Silicide Formation: Markers and Moving Species

1985 ◽  
Vol 54 ◽  
Author(s):  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Thermal Annealing ◽  
Noble Metal ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Collision Cascade ◽  
Silicide Formation ◽  
Amorphous Si ◽  
Ni Silicides

ABSTRACTThe moving species in near-noble metal suicide formation was investigated using embedded markers and Rutherford backscattering. With thermal annealing of Ni-silicides, Ni is the dominant diffusing species while in ion-induced reactions both Ni and Si diffuse across the suicide. This difference in behavior is not a result of the formation of amorphous Si during ion irradiation nor is it caused by release of Si. We propose that the diffusion of Si is associated with the formation of defects in the suicide layer generated within the collision cascade.

Rutherford backscattering analysis of GaN decomposition

2003 ◽  
Vol 21 (3) ◽  
pp. 1080 ◽  
Author(s):  
H. W. Choi ◽  
M. G. Cheong ◽  
M. A. Rana ◽  
S. J. Chua ◽  
T. Osipowicz ◽  
...  
Keyword(s):  
Rutherford Backscattering ◽  
Backscattering Analysis

scholarly journals Ion-Beam Mixing and Tribology of Fe/B Multilayers

1989 ◽  
Vol 157 ◽  
Author(s):  
Renyuan Hu ◽  
L. E. Rehn ◽  
G. R. Fenske ◽  
P. M. Baldo
Keyword(s):  
Electron Microscopy ◽  
Irradiation Dose ◽  
Activation Enthalpy ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Arrhenius Behavior ◽  
Ion Beam Mixing ◽  
Steel Substrates ◽  
M50 Steel

ABSTRACTInterdiffusion of Fe and B trilayer specimens during 1-MeV Kr+ bombardment was studied using Rutherford backscattering and electron microscopy. The square of the interdiffusion distance during mixing at 300°C was found to depend linearly on the irradiation dose. Arrhenius behavior with an apparent activation enthalpy of 0.7 eV was observed for the mixing between 200 and 500°C. Electron microscopy of ion-beam mixed multilayer specimens revealed that two crystalline compounds, Fe2B and Fe3B, formed during bombardment at 450°C, while two different amorphous Fe/B phases formed at 300°C. Substantially improved adhesion and reduced friction were observed for Fe/B multilayers ion-beam mixed onto M50 steel substrates at 450°C.

A Comparison of Thermal Annealing and Ion Beam Mixing in the Fe/Al Bilayer

1989 ◽  
Vol 112 (1) ◽  
pp. 105-114 ◽  
Author(s):  
M. A. Z. Vasconcellos ◽  
J. A. T. Borges da Costa ◽  
W. H. Schreiner ◽  
I. J. R. Baumvol
Keyword(s):  
Thermal Annealing ◽  
Ion Beam ◽  
Ion Beam Mixing

Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and Rutherford backscattering and channeling

1993 ◽  
Vol 70 (1) ◽  
pp. 45-48 ◽  
Author(s):  
N. Hayashi ◽  
R. Suzuki ◽  
M. Hasegawa ◽  
N. Kobayashi ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Slow Positron

Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
J. O. Olowolafe ◽  
R. Fastow
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Reaction Rates ◽  
Rutherford Backscattering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Crystal Silicon ◽  
Transmission Electron

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

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