scholarly journals Ion Beam-Induced Changes in Optical Properties of MgO

1995 ◽  
Vol 396 ◽  
Author(s):  
Ying Qian ◽  
D. Ila ◽  
K. X. He ◽  
M. Curley ◽  
D. B. Poker ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Sample Characterization ◽  
Ag Clusters ◽  
Induced Changes ◽  
Optical Spectrophotometry

AbstractThe implantation of Ag into MgO (100) single crystals, followed by thermal annealing at 1100°C, leads to dramatic changes in their optical properties. The changes in the optical properties are due to the presence of small Ag clusters which are formed in the annealed samples. The small Ag clusters are obtained by thermal annealing of the implanted MgO crystals between 600°C and 1100°C to investigate the changes in cluster sizes and to correlate with changes in their optical properties. Sample characterization is carried out using optical spectrophotometry to confirm the effective presence of Ag clusters and Rutherford Backscattering Spectrometry (RBS) to study the profile of Ag clusters.

Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing

1994 ◽  
Vol 299 ◽  
Author(s):  
M. Fernandez ◽  
T. Rodriguez ◽  
A. Almendra ◽  
J. Jimenez-Leube ◽  
H. Wolters
Keyword(s):  
Auger Electron Spectroscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Oxygen Effect ◽  
Silicide Formation

AbstractIridium silicide formation by rapid thermal annealing (RTA) in an Ar atmosphere or under vacuum has been investigated. The evolution of the silicide front and the identification of the phases were monitored by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). Oxygen was incorporated during the RTA process in an Ar atmosphere. The oxygen effect is to slow down the silicide formation and eventually to stop it. In all the cases, the oxygen piled-up at the iridium-iridium silicide interface. No distinguishable phase was formed by RTA in an Ar atmosphere. No oxygen contarsi'nation was detected when the RTA was performed under a vacuum lower than 2×10−5 Torr. In this case Ir1Si1 and Ir1Si1.75 phases were formed.

scholarly journals Photoluminescence Spectroscopy and Rutherford Backscattering Channeling Evaluation of Various Capping Techniques for Rapid Thermal Annealing of Ion-Implanted ZnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
E.L. Allen ◽  
F.X. Zach ◽  
K.M. Yu ◽  
E.D. Bourret
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Rutherford Backscattering ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Ion Implanted

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

A rutherford backscattering spectrometry study of Zn implanted BeO single crystals

1999 ◽  
Vol 150 (1-4) ◽  
pp. 157-160 ◽  
Author(s):  
M. V. Yakushev ◽  
A. N. Varaksin ◽  
I. N. Ogorodnikov ◽  
A. V. Kruzhalov
Keyword(s):  
Single Crystals ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering

Pulsed Ion Beam Interface Melting of Ptcr and Crta Alloys on Si Structures

1982 ◽  
Vol 13 ◽  
Author(s):  
C. J. Palmstrom ◽  
R. Fastow
Keyword(s):  
Phase Separation ◽  
Thermal Annealing ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Composition Profiles ◽  
Backscattering Analysis

ABSTRACTComposition profiles of thermal and pulsed ion beam annealed PtCr/Si and CrTa/Si have been determined using Rutherford backscattering analysis. Thermal annealing resulted in layered phase separation with Pt-silicide in the PtCr/Si case, and CrSi 2 in the CrTa/Si case, forming at the Si surface. Pulsed ion beam annealing, 300–380 keV protons at energy densities ~0.75–1.6 J/cm2 , produced interface melting with no layered phase separation.

scholarly journals INFLUENCE OF THERMAL ANNEALING ON THE STRUCTURE AND OPTICAL PROPERTIES OF THIN ALUMINUM NITRIDE FILMS ON SAPPHIRE

2020 ◽  
pp. 591-600
Author(s):  
Олег Васильевич Девицкий ◽  
Александр Александрович Кравцов ◽  
Александр Сергеевич Пащенко ◽  
Игорь Александрович Сысоев
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Surface Morphology ◽  
Aluminum Nitride ◽  
Thermal Annealing ◽  
Wavelength Range ◽  
Ion Beam ◽  
Nitrogen Atmosphere ◽  
Root Mean Square Roughness ◽  
Maximum Height

Представлены результаты экспериментального исследования влияния термического отжига на структуру, морфологию поверхности и оптические свойства тонких пленок нитрида алюминия на сапфире. Тонкие пленки нитрида алюминия на сапфире толщиной 200 нм отжигались на воздухе и в атмосфере азота при остаточном давлении газов в вакуумной камере установки ионно-лучевого осаждения не менее 100 Па при температуре 850 °C. Установлено, что при термическом отжиге пленок нитрида алюминия на сапфире в атмосфере азота происходит уменьшение среднеквадратичной шероховатости пленок до 0,8 нм, увеличение коэффициента пропускания в диапазоне длин волн 300 -1100 нм вплоть до 96 %, а также повышение стехиометрии пленок. Показано, что для пленок нитрида алюминия на сапфире, отожжённых на воздухе, происходит окисление нитрида алюминия с образованием аморфного оксида алюминия при температуре 850 °C. Результаты энергодисперсионного анализа показали полное отсутствие азота на поверхности этих пленок. Снижение коэффициента пропускания во всем диапазоне длин волн для пленок AlN, отожжённых на воздухе, делает их не пригодными для применения в оптоэлектронике. Морфология поверхности этих пленок представляет собой массив остроконечных образований с максимальной высотой 190,7 нм и среднеарифметической шероховатостью поверхности 3,7 нм. The results of an experimental study of the effect of thermal annealing on the structure, surface morphology and optical properties of thin films of aluminum nitride on sapphire are presented. Thin films of aluminum nitride on sapphire with a thickness of 200 nm were annealed in air and in a nitrogen atmosphere at a residual gas pressure in the vacuum chamber of the ion-beam deposition unit of no less than 100 Pa at a temperature of 850 °C. It was found that thermal annealing of aluminum nitride films on sapphire in a nitrogen atmosphere leads to a decrease in the root mean square roughness of the films to 0,8 nm, an increase in the transmittance in the wavelength range of 300 -1100 nm up to 96 %, and an increase in the stoichiometry of the films. It is shown that for aluminum nitride films annealed in air on sapphire, aluminum nitride is oxidized to form amorphous aluminum oxide at a temperature of 850 °C. The results of energy dispersive analysis showed the complete absence of nitrogen on the surface of these films. A decrease in the transmittance over the entire wavelength range for films AlN annealed in air makes them unsuitable for use in optoelectronics. The surface morphology of these films is an array of pointed formations with a maximum height 190,7 nm and an arithmetic mean surface roughness 3,7 nm.

Thermal Neutron Irradiation of LiNbO3 Crystals Doped with Hf and Hfmg

1996 ◽  
Vol 439 ◽  
Author(s):  
J. G. Marques ◽  
A. Kling ◽  
J. C. Soares ◽  
M. F. Da Silva ◽  
E. Diétguez ◽  
...  
Keyword(s):  
Thermal Neutron ◽  
Single Crystals ◽  
Thermal Annealing ◽  
Neutron Irradiation ◽  
Ion Beam ◽  
Thermal Neutrons ◽  
Interaction Techniques ◽  
Thermal Neutron Irradiation

AbstractThe effects of irradiation with thermal neutrons on LiNbO3 single crystals doped with Hf and Hf,Mg were studied with ion beam and hyperfme interaction techniques, using Hf as a probe. In crystals where Hf occupies both Li and Nb sites, the fraction in Nb sites is strongly reduced after irradiation. The initial situation is recovered after thermal annealing at 973 K, in air.

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