Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and Rutherford backscattering and channeling

1993 ◽  
Vol 70 (1) ◽  
pp. 45-48 ◽  
Author(s):  
N. Hayashi ◽  
R. Suzuki ◽  
M. Hasegawa ◽  
N. Kobayashi ◽  
S. Tanigawa ◽  
...  
Author(s):  
N. Hayashi ◽  
R. Suzuki ◽  
H. Watanabe ◽  
I. Sakamoto ◽  
N. Kobayashi ◽  
...  

2021 ◽  
Author(s):  
Vladimir Krsjak ◽  
Petr Hruška ◽  
Jarmila Degmova ◽  
Stanislav Sojak ◽  
Pavol Noga ◽  
...  

The present work provides an innovative approach to the near-surface slow-positron-beam (SPB) study of structural materials exposed to ion-beam irradiation. This approach enables the use of variable-energy positron annihilation lifetime...


2004 ◽  
Vol 42 (13) ◽  
pp. 2441-2459 ◽  
Author(s):  
R. Zhang ◽  
X. Gu ◽  
H. Chen ◽  
J. Zhang ◽  
Y. Li ◽  
...  

1989 ◽  
Vol 157 ◽  
Author(s):  
Renyuan Hu ◽  
L. E. Rehn ◽  
G. R. Fenske ◽  
P. M. Baldo

ABSTRACTInterdiffusion of Fe and B trilayer specimens during 1-MeV Kr+ bombardment was studied using Rutherford backscattering and electron microscopy. The square of the interdiffusion distance during mixing at 300°C was found to depend linearly on the irradiation dose. Arrhenius behavior with an apparent activation enthalpy of 0.7 eV was observed for the mixing between 200 and 500°C. Electron microscopy of ion-beam mixed multilayer specimens revealed that two crystalline compounds, Fe2B and Fe3B, formed during bombardment at 450°C, while two different amorphous Fe/B phases formed at 300°C. Substantially improved adhesion and reduced friction were observed for Fe/B multilayers ion-beam mixed onto M50 steel substrates at 450°C.


1984 ◽  
Vol 35 ◽  
Author(s):  
J. O. Olowolafe ◽  
R. Fastow

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.


2001 ◽  
Vol 155 (1-4) ◽  
pp. 139-144 ◽  
Author(s):  
E. J. Sendezera ◽  
A. T. Davidson ◽  
A. G. Kozakiewicz ◽  
W. Anwand ◽  
G. Brauer ◽  
...  

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