Ion-Beam Induced Silicide Formation: Markers and Moving Species

1985 ◽  
Vol 54 ◽  
Author(s):  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Thermal Annealing ◽  
Noble Metal ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Collision Cascade ◽  
Silicide Formation ◽  
Amorphous Si ◽  
Ni Silicides

ABSTRACTThe moving species in near-noble metal suicide formation was investigated using embedded markers and Rutherford backscattering. With thermal annealing of Ni-silicides, Ni is the dominant diffusing species while in ion-induced reactions both Ni and Si diffuse across the suicide. This difference in behavior is not a result of the formation of amorphous Si during ion irradiation nor is it caused by release of Si. We propose that the diffusion of Si is associated with the formation of defects in the suicide layer generated within the collision cascade.

Size characterisation of noble-metal nano-crystals formed in sapphire by ion irradiation and subsequent thermal annealing

2012 ◽  
Vol 259 ◽  
pp. 574-581 ◽  
Author(s):  
Pablo-Ernesto Mota-Santiago ◽  
Alejandro Crespo-Sosa ◽  
José-Luis Jiménez-Hernández ◽  
Hector-Gabriel Silva-Pereyra ◽  
Jorge-Alejandro Reyes-Esqueda ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Noble Metal ◽  
Ion Irradiation ◽  
Subsequent Thermal Annealing

Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing

1994 ◽  
Vol 299 ◽  
Author(s):  
M. Fernandez ◽  
T. Rodriguez ◽  
A. Almendra ◽  
J. Jimenez-Leube ◽  
H. Wolters
Keyword(s):  
Auger Electron Spectroscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Oxygen Effect ◽  
Silicide Formation

AbstractIridium silicide formation by rapid thermal annealing (RTA) in an Ar atmosphere or under vacuum has been investigated. The evolution of the silicide front and the identification of the phases were monitored by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). Oxygen was incorporated during the RTA process in an Ar atmosphere. The oxygen effect is to slow down the silicide formation and eventually to stop it. In all the cases, the oxygen piled-up at the iridium-iridium silicide interface. No distinguishable phase was formed by RTA in an Ar atmosphere. No oxygen contarsi'nation was detected when the RTA was performed under a vacuum lower than 2×10−5 Torr. In this case Ir1Si1 and Ir1Si1.75 phases were formed.

Changing the Structural State of Amorphous Silicon by Ion Irradiation

1989 ◽  
Vol 157 ◽  
Author(s):  
S. Roorda ◽  
W.C. Sinke ◽  
J.M. Poate ◽  
D.C. Jacobson ◽  
S. Dierker ◽  
...  
Keyword(s):  
Structural Relaxation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beams ◽  
Nuclear Collision ◽  
Important Ingredient ◽  
Scanning Calorimetry ◽  
Amorphous Si ◽  
Induced Defects ◽  
Kinetics Of

ABSTRACTIon beams of keV and MeV energies have been used to bombard amorphous Si (a-Si), which had previously been annealed (‘relaxed’). Analysis by Raman spectroscopy and differential scanning calorimetry shows that when 1 out of every 20 Si atoms is displaced by a nuclear collision, the a-Si returns to its unrelaxed state and cannot be distinguished from as implanted a-Si. Moreover, the kinetics of the heat release on annealing of similarly bombarded crystalline Si (c-Si) are qualitatively identical to those of structural relaxation in a-Si. This implies that the population of ion beam induced defects in a-Si is very similar to that in c-Si. It also shows that defect annihilation is an important ingredient in the mechanism of structural relaxation of a-Si.

Ion Beam Induced Structural and Electrical Modifications in Crystalline and Amorphous Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Coffa ◽  
A. Battaglia ◽  
F. Priolo
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Ion Irradiation ◽  
Deep Level ◽  
Ion Beam ◽  
Defect Structures ◽  
Transmission Electron ◽  
Defect Accumulation ◽  
Amorphous Si ◽  
Transient Spectroscopy

ABSTRACTThe mechanisms of defect accumulation and dynamic annealing in ion-implanted crystalline and amorphous Si are elucidated by performing conductivity and Raman spec-trascopy measurements in-situ during ion irradiation. In amorphous Si the entire gamut of defect structures has been characterized by analyzing the annealing kinetics from 77 K to ~ 800 K both during and after irradiation. Moreover the modifications in the electronic properties of crystalline Si produced by ion-irradiation have been investigated. The use of in-situ techniques in combination with transmission electron microscopy and deep-level transient spectroscopy allowed us to demonstrate the correlation between structural and electrical defects produced by ion-irradiation in Si.

Selective tungsten silicide formation by ion‐beam mixing and rapid thermal annealing

1985 ◽  
Vol 57 (6) ◽  
pp. 1890-1894 ◽  
Author(s):  
B‐Y. Tsaur ◽  
C. K. Chen ◽  
C. H. Anderson ◽  
D. L. Kwong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Silicide Formation ◽  
Ion Beam Mixing ◽  
Tungsten Silicide

scholarly journals Ion Beam-Induced Changes in Optical Properties of MgO

1995 ◽  
Vol 396 ◽  
Author(s):  
Ying Qian ◽  
D. Ila ◽  
K. X. He ◽  
M. Curley ◽  
D. B. Poker ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Sample Characterization ◽  
Ag Clusters ◽  
Induced Changes ◽  
Optical Spectrophotometry

AbstractThe implantation of Ag into MgO (100) single crystals, followed by thermal annealing at 1100°C, leads to dramatic changes in their optical properties. The changes in the optical properties are due to the presence of small Ag clusters which are formed in the annealed samples. The small Ag clusters are obtained by thermal annealing of the implanted MgO crystals between 600°C and 1100°C to investigate the changes in cluster sizes and to correlate with changes in their optical properties. Sample characterization is carried out using optical spectrophotometry to confirm the effective presence of Ag clusters and Rutherford Backscattering Spectrometry (RBS) to study the profile of Ag clusters.

Refractory metal silicide formation by ion beam mixing and rapid thermal annealing

1985 ◽  
Vol 47 (7) ◽  
pp. 688-691 ◽  
Author(s):  
D. L. Kwong ◽  
D. C. Meyers ◽  
N. S. Alvi ◽  
L. W. Li ◽  
E. Norbeck
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Refractory Metal ◽  
Ion Beam ◽  
Metal Silicide ◽  
Silicide Formation ◽  
Ion Beam Mixing

Ion Irradiation Effects on Pt Contacts To Si with and without Interfacial Chemical Oxide

1982 ◽  
Vol 14 ◽  
Author(s):  
Thomas Banwell ◽  
Manuela Finetti ◽  
Ilkka Suni ◽  
Marc-A. Nicolet ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Thermal Annealing ◽  
Power Law ◽  
Ion Irradiation ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Silicide Formation ◽  
Reduced Rate ◽  
Ion Backscattering ◽  
Interfacial Oxygen

ABSTRACTThe electrical properties of ion irradiated metal-semiconductor contacts are investigated. Silicide contacts are fabricated by depositing Pt on chemically clean or slightly oxidized (∼14 Å SiO2) n+-and n-type <111> Si, followed by a Si ion irradiation (1014 − 6×1015 Si/cm2) through the metal-Si interface at various substrate temperatures, and a final thermal annealing in vacuum to form the silicide. Forward I-V measurements are employed for electrical characterization. Metal-Si interaction and substrate damage are measured by MeV ion backscattering and channeling, and interfacial oxygen monitored by nuclear 16O(d,α)14N reaction.Platinum contacts prepared on clean n-type substrates are Schottky diodes with a barrier height øBn = 0.83 eV. After Si irradiation, the forward I(V) is a power law whose form is largely independent of the dose. Subsequent thermal annealing induces silicide formation, but at a reduced rate compared to irradiated samples. The do characteristics is roughly exponential again, but departures from the original Schottky characteristics remain and are largest for the highest Si doses. The effect is attributed to radiation damage in the Si that is not consumed by the silicide reaction.Platinum contacts prepared on chemically oxidized samples behave differently for different substrate materials, although the total amount of interfacial oxygen is always the same. On n+-type samples, the silicide formation at 400°C is laterally uniform for Si doses ≥ 2 × 1014 cm−2, but is nonuniform for all doses (≤ 2 × 1015 Si/cm2) on n-type samples. For n+-type samples at 250°C, a dose of 2 × 1015 Si/cm2 is required to induce (uniform) silicide formation; the kinetics displays a time delay compared with that of clean n+ substrates. On oxidized n-type substrates, the I(V) characteristics of Pt contacts before irradiation is not Schottky-like, but power-law-type. After irradiation, the characteristic is the same as for the clean irradiated samples. Thermal annealing induces only incomplete recovery toward an exponential behavior.These results demonstrate that radiation damage in the unreacted Si remains significant for the electrical behavior of all.These results demonstrate that radiation damage determines the I(V) characteristics of as-irradiated Pt contacts to n-type Si regardless of the presence of an interfacial oxide layer. After annealing at 400°C for 30 min, radiation damage is still significant, but the oxidized samples recover less than the clean ones. The results are attributed to radiation damage in the unreacted Si substrate.

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