Damage Removal and Activation in Rapid-Thermally-Annealed Silicon Implanted Semi-Insulating GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
J. L. Tandon ◽  
J. H. Madok ◽  
I. S. Leybovich ◽  
G. Bai
Keyword(s):  
Electron Concentration ◽  
Lattice Strain ◽  
Extended Defects ◽  
Strain Measurements ◽  
X Ray ◽  
Depth Profiles ◽  
Annealing Temperatures ◽  
Implantation Damage ◽  
Long Tails ◽  
Concentration Depth Profiles

ABSTRACTIn the Rapid-Thermal-Annealing of Si-implanted undoped semi-insulating GaAs three regimes are broadly identified. At ˜ 600°C, ion implantation damage is largely removed, as indicated by lattice-strain measurements performed by X-ray rocking curves. Between ˜ 600 – 900°C, “extended defects”, which presumably account for the long tails in the electron concentration depth profiles, are annealed. Higher annealing temperatures in this range result in profiles with successively shorter tails. Finally, beyond ˜ 900°C, “acceptor levels” in the material are revealed, which become effective in compensating the Si activation.

Formalism for the determination of intermediate stress gradients using X-ray diffraction

2009 ◽  
Vol 42 (2) ◽  
pp. 192-197 ◽  
Author(s):  
Thomas Gnäupel-Herold
Keyword(s):  
Lattice Strain ◽  
Narrow Line ◽  
X Ray Diffraction ◽  
Beam Spot ◽  
Strain Measurements ◽  
One Dimensional ◽  
X Ray ◽  
Stress Gradients ◽  
Shaped Beam

A method is outlined that allows the determination of one-dimensional stress gradients at length scales greater than 0.2 mm. By using standard four-circle X-ray diffractometer equipment and simple aperture components, length resolutions down to 0.05 mm in one direction can be achieved through constant orientation of a narrow, line-shaped beam spot. Angle calculations are given for the adjustment of goniometer angles, and for the effective azimuth and tilt of the scattering vector for general angle settings in a four-circle goniometer. The latter is necessary for the computation of stresses from lattice strain measurements.

X-ray diffraction study of concentration depth profiles of binary alloy coatings during thermal diffusion: application to brass coating

1999 ◽  
Vol 32 (1) ◽  
pp. 27-35 ◽  
Author(s):  
B. Bolle ◽  
A. Tidu ◽  
J. J. Heizmann
Keyword(s):  
Thermal Diffusion ◽  
Profile Analysis ◽  
Nondestructive Method ◽  
Line Profile Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Profiles ◽  
Diffraction Line Profile ◽  
Concentration Depth Profile ◽  
Concentration Depth Profiles

Using the Houska method based on X-ray diffraction-line profile analysis, new mathematical treatments are proposed to compute directly the concentration depth profile of thin films obtained by diffusion. As an example, concentration depth profiles of a brass layer have been studied during the thermal diffusion process. This nondestructive method is fast (a few minutes) and allows the sample to be used for complementary analysis if necessary.

Channeling Studies of Ion-Implantation Damage in Titanium Dioxide

1987 ◽  
Vol 93 ◽  
Author(s):  
N. G. Stoffel ◽  
D. L. Hart
Keyword(s):  
Ion Implantation ◽  
Extended Defects ◽  
Annealing Temperatures ◽  
Defect Annealing ◽  
Implantation Damage ◽  
Oxygen Ion ◽  
Reducing Environment ◽  
Higher Doses ◽  
Oxygen Ion Implantation ◽  
Original Crystal

ABSTRACTRutherford backscattering in the channeling alignment was used to characterize the damage produced in rutile TiO2 by oxygen ion implantation at energies of 200 and 400 keV. Backscattering g{om the dajnaged layer increases sublinearly with ion dose above 4×1015 ions/cm2. Complete amorphization was not achieved even for much higher doses and implant temperatures well below room temperature, and remnants of the original crystal lattice remain in the damaged layer. Substantial defect annealing occurs at 450 C, and essentially complete lattice recovery is observed at 750 C when the annealing takes place in a reducing environment. In an oxidizing ambient, higher annealing temperatures are required to achieve the same degree of crystal regrowth, and dechanneling actually increases at lower annealing temperatures, apparently due to the coalescence of point defects into extended defects. The optical properties of the implanted layer were also probed by ellipsometry.

scholarly journals Statistical effects in X-ray diffraction lattice strain measurements of ferritic steel using crystal plasticity

2018 ◽  
Vol 153 ◽  
pp. 159-165 ◽  
Author(s):  
T.O. Erinosho ◽  
D.M. Collins ◽  
R.I. Todd ◽  
A.J. Wilkinson ◽  
F.P.E. Dunne
Keyword(s):  
Crystal Plasticity ◽  
Ferritic Steel ◽  
Lattice Strain ◽  
X Ray Diffraction ◽  
Strain Measurements ◽  
X Ray ◽  
Diffraction Lattice ◽  
Statistical Effects

X-Ray Measurements of Lattice Strain in Doped Epitaxial Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
A. P. Pogany ◽  
T. E. Preuss
Keyword(s):  
Laser Annealing ◽  
Lattice Strain ◽  
Covalent Radius ◽  
Epitaxial Silicon ◽  
Double Crystal ◽  
Strain Measurements ◽  
Strain Profile ◽  
One Dimensional ◽  
X Ray ◽  
Pulsed Laser Annealing

ABSTRACT(100) silicon amorphized by antimony ion implantation was epitaxially regrown by either furnace or pulsed laser annealing. Rocking curves were measured on a double-crystal X-ray diffractometer, and compared with calculations based on a one-dimensional strain profile. For laser annealed samples the strain profile followed that of the antimony (redistributed by surface melting), with a proportionality constant given by the Pauling covalent radius ratio. For furnace annealed samples however the strain was found to be deeper, but of smaller peak magnitude, than that expected from the antimony distribution. This is attributed to formation and movement of defects acting to relax lattice strain. Other X-ray strain measurements on epitaxial silicon containing other dòpants are briefly reviewed.

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