Lattice Strain Measurements In Silicon Micropositioning Elements By X-Ray Topography

1989 ◽  
Author(s):  
D. Windisch ◽  
P. Becker
Keyword(s):  
Lattice Strain ◽  
Strain Measurements ◽  
X Ray

Formalism for the determination of intermediate stress gradients using X-ray diffraction

2009 ◽  
Vol 42 (2) ◽  
pp. 192-197 ◽  
Author(s):  
Thomas Gnäupel-Herold
Keyword(s):  
Lattice Strain ◽  
Narrow Line ◽  
X Ray Diffraction ◽  
Beam Spot ◽  
Strain Measurements ◽  
One Dimensional ◽  
X Ray ◽  
Stress Gradients ◽  
Shaped Beam

A method is outlined that allows the determination of one-dimensional stress gradients at length scales greater than 0.2 mm. By using standard four-circle X-ray diffractometer equipment and simple aperture components, length resolutions down to 0.05 mm in one direction can be achieved through constant orientation of a narrow, line-shaped beam spot. Angle calculations are given for the adjustment of goniometer angles, and for the effective azimuth and tilt of the scattering vector for general angle settings in a four-circle goniometer. The latter is necessary for the computation of stresses from lattice strain measurements.

Damage Removal and Activation in Rapid-Thermally-Annealed Silicon Implanted Semi-Insulating GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
J. L. Tandon ◽  
J. H. Madok ◽  
I. S. Leybovich ◽  
G. Bai
Keyword(s):  
Electron Concentration ◽  
Lattice Strain ◽  
Extended Defects ◽  
Strain Measurements ◽  
X Ray ◽  
Depth Profiles ◽  
Annealing Temperatures ◽  
Implantation Damage ◽  
Long Tails ◽  
Concentration Depth Profiles

ABSTRACTIn the Rapid-Thermal-Annealing of Si-implanted undoped semi-insulating GaAs three regimes are broadly identified. At ˜ 600°C, ion implantation damage is largely removed, as indicated by lattice-strain measurements performed by X-ray rocking curves. Between ˜ 600 – 900°C, “extended defects”, which presumably account for the long tails in the electron concentration depth profiles, are annealed. Higher annealing temperatures in this range result in profiles with successively shorter tails. Finally, beyond ˜ 900°C, “acceptor levels” in the material are revealed, which become effective in compensating the Si activation.

scholarly journals Statistical effects in X-ray diffraction lattice strain measurements of ferritic steel using crystal plasticity

2018 ◽  
Vol 153 ◽  
pp. 159-165 ◽  
Author(s):  
T.O. Erinosho ◽  
D.M. Collins ◽  
R.I. Todd ◽  
A.J. Wilkinson ◽  
F.P.E. Dunne
Keyword(s):  
Crystal Plasticity ◽  
Ferritic Steel ◽  
Lattice Strain ◽  
X Ray Diffraction ◽  
Strain Measurements ◽  
X Ray ◽  
Diffraction Lattice ◽  
Statistical Effects

X-Ray Measurements of Lattice Strain in Doped Epitaxial Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
A. P. Pogany ◽  
T. E. Preuss
Keyword(s):  
Laser Annealing ◽  
Lattice Strain ◽  
Covalent Radius ◽  
Epitaxial Silicon ◽  
Double Crystal ◽  
Strain Measurements ◽  
Strain Profile ◽  
One Dimensional ◽  
X Ray ◽  
Pulsed Laser Annealing

ABSTRACT(100) silicon amorphized by antimony ion implantation was epitaxially regrown by either furnace or pulsed laser annealing. Rocking curves were measured on a double-crystal X-ray diffractometer, and compared with calculations based on a one-dimensional strain profile. For laser annealed samples the strain profile followed that of the antimony (redistributed by surface melting), with a proportionality constant given by the Pauling covalent radius ratio. For furnace annealed samples however the strain was found to be deeper, but of smaller peak magnitude, than that expected from the antimony distribution. This is attributed to formation and movement of defects acting to relax lattice strain. Other X-ray strain measurements on epitaxial silicon containing other dòpants are briefly reviewed.

Interpretation of Diffraction Data from In Situ Stress Measurements during Biaxial Sheet Metal Forming

2013 ◽  
Vol 768-769 ◽  
pp. 441-448
Author(s):  
Thomas Gnäupel-Herold ◽  
Mark Iadicola ◽  
Adam Creuziger ◽  
Tim Foecke ◽  
Lin Hu
Keyword(s):  
Sheet Metal Forming ◽  
Metal Forming ◽  
Lattice Strain ◽  
Hybrid Approach ◽  
Yield Behavior ◽  
Strain Measurements ◽  
X Ray ◽  
Lattice Strains ◽  
Model Predictions

Biaxial yield behavior is determined in-situ through X-ray lattice strain measurements. The distributions of d-spacings in different sample directions is affected both by the changes in diffraction elastic constants (DEC) from evolving texture and by the intergranular (IG) strains. Model predictions were found to be lacking, thus, a hybrid approach was developed based on measurements of DEC and IG strains at selected biaxial deformations. In order to convert measured lattice strains to stress for any given biaxial plastic strain a theoretical approximation was fitted to the experimental data, thus allowing the estimation of the evolution of DEC and IG strains with plastic deformation.

X-ray measurement of minute lattice strain in perfect silicon crystals

1981 ◽  
Vol 156 (3-4) ◽  
Author(s):  
U. Bonse ◽  
I. Hartmann
Keyword(s):  
Residual Strain ◽  
Lattice Strain ◽  
High Sensitivity ◽  
Neutron Interferometry ◽  
Double Crystal ◽  
Strain Measurements ◽  
X Ray ◽  
Silicon Crystals ◽  
Float Zone ◽  
Quantitative Manner

AbstractThe residual strain still present in nearly perfect silicon single crystals has been measured quantitatively by using double crystal topography at high reflexion orders.High quality float zone crystals from different suppliers were found to vary in residual strain from 2 × 10The high sensitivity strain measurements are very useful to measure in a quantitative manner the degree of lattice perfection of so-called nearly perfect crystals. The results are already useful for neutron interferometry and, possibly, may become so for microintegration of devices.

An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

2004 ◽  
Vol 19 (4) ◽  
pp. 347-351
Author(s):  
J. Xu ◽  
X. S. Wu ◽  
B. Qian ◽  
J. F. Feng ◽  
S. S. Jiang ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Lattice Strain ◽  
Lattice Mismatch ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Large Lattice ◽  
Scattering Study

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

Strain Measurement by X-ray Diffraction Methods

1949 ◽  
Vol 1 (3) ◽  
pp. 211-224
Author(s):  
G. B. Greenough
Keyword(s):  
Strain Measurement ◽  
Plastic Anisotropy ◽  
Stress And Strain ◽  
Routine Method ◽  
X Ray Diffraction ◽  
Strain Measurements ◽  
X Ray ◽  
The Past ◽  
Polycrystalline Metals ◽  
The Individual

SummaryMany papers have been written on the measurement of strain by X-ray diffraction methods and on the interpretation of these strains in terms of stresses. Whereas, during the past few years, the experimental methods of determining the strains have. remained largely unchanged, research has shown that the older techniques for calculating stresses from strains are not always valid.In this paper an attempt is made to describe some of the principles of strain measurement by X-ray diffraction methods to those who are unfamiliar with the methods. The types of stress and strain systems which may exist in polycrystalline metals are then considered, particular attention being paid to the effect of the elastic and plastic anisotropy of the individual crystals. Some indication is given as to how the earlier methods of interpreting X-ray strain measurements should be modified, but no rigid routine method is proposed for use in a general case.

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