Channeling Studies of Ion-Implantation Damage in Titanium Dioxide

1987 ◽  
Vol 93 ◽  
Author(s):  
N. G. Stoffel ◽  
D. L. Hart
Keyword(s):  
Ion Implantation ◽  
Extended Defects ◽  
Annealing Temperatures ◽  
Defect Annealing ◽  
Implantation Damage ◽  
Oxygen Ion ◽  
Reducing Environment ◽  
Higher Doses ◽  
Oxygen Ion Implantation ◽  
Original Crystal

ABSTRACTRutherford backscattering in the channeling alignment was used to characterize the damage produced in rutile TiO2 by oxygen ion implantation at energies of 200 and 400 keV. Backscattering g{om the dajnaged layer increases sublinearly with ion dose above 4×1015 ions/cm2. Complete amorphization was not achieved even for much higher doses and implant temperatures well below room temperature, and remnants of the original crystal lattice remain in the damaged layer. Substantial defect annealing occurs at 450 C, and essentially complete lattice recovery is observed at 750 C when the annealing takes place in a reducing environment. In an oxidizing ambient, higher annealing temperatures are required to achieve the same degree of crystal regrowth, and dechanneling actually increases at lower annealing temperatures, apparently due to the coalescence of point defects into extended defects. The optical properties of the implanted layer were also probed by ellipsometry.

Effect of Oxygen ION Implantation in Gallium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
W. Jiang ◽  
W.J. Weber ◽  
S. Thevuthasan ◽  
G.J. Exarhos ◽  
B.J. Bozlee
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ceramic Materials ◽  
Saturation State ◽  
Implantation Damage ◽  
Oxygen Ion ◽  
Asymmetric Shape ◽  
Effect Of Oxygen ◽  
Oxygen Ion Implantation

AbstractEpitaxial single crystal GaN films (2.0 μtm thick) were implanted 60° off the <0001> surface normal with 600 keV O+ ions at 190 or 210 K over a range of ion fluences from 4.8x 1017 to 5.0 × 1020 ions/m2. The implantation damage, as determined by in-situ Rutherford Backscattering Spectrometry in a <0001> channeling geometry (RBS/C), ranged from dilute defects up to the formation of a disorder saturation state that was not fully amorphous. The relative disorder on the Ga sublattice exhibited a sigmoidal dependence on ion fluence. Results show that GaN crystals are extremely resistant to the ion implantation damage as compared to other ceramic materials like SiC. An asymmetric shape in the angular scan curve around the <0001> axis, which might be associated with the Ga lattice distortion in the crystal structure, was observed for the as-irradiated material to the highest ion fluence (5.o× 1020 O+/m2) at 210 K. Comparisons of Ga disorder depth-profiles from the experiment and SRIM97 simulations suggest that the damage peaks shift to greater depths at the low irradiation temperature (210 K). Significant recovery of these defects was not observed in the isochronal annealing steps (20-min) up to 970 K.

scholarly journals Effect of Oxygen Ion Implantation in Gallium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 622-627 ◽  
Author(s):  
W. Jiang ◽  
W.J. Weber ◽  
S. Thevuthasan ◽  
G.J. Exarhos ◽  
B.J. Bozlee
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ceramic Materials ◽  
Saturation State ◽  
Implantation Damage ◽  
Oxygen Ion ◽  
Asymmetric Shape ◽  
Effect Of Oxygen ◽  
Oxygen Ion Implantation

Epitaxial single crystal GaN films (2.0 μm thick) were implanted 60° off the <0001> surface normal with 600 keV O+ ions at 190 or 210 K over a range of ion fluences from 4.8×1017 to 5.0×1020 ions/m2. The implantation damage, as determined by in-situ Rutherford Backscattering Spectrometry in a <0001> channeling geometry (RBS/C), ranged from dilute defects up to the formation of a disorder saturation state that was not fully amorphous. The relative disorder on the Ga sublattice exhibited a sigmoidal dependence on ion fluence. Results show that GaN crystals are extremely resistant to the ion implantation damage as compared to other ceramic materials like SiC. An asymmetric shape in the angular scan curve around the <0001> axis, which might be associated with the Ga lattice distortion in the crystal structure, was observed for the as-irradiated material to the highest ion fluence (5.0×1020 O+/m2) at 210 K. Comparisons of Ga disorder depth-profiles from the experiment and SRIM97 simulations suggest that the damage peaks shift to greater depths at the low irradiation temperature (210 K). Significant recovery of these defects was not observed in the isochronal annealing steps (20-min) up to 970 K.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Improved surface corrosion resistance of WE43 magnesium alloy by dual titanium and oxygen ion implantation

2013 ◽  
Vol 529 ◽  
pp. 407-411 ◽  
Author(s):  
Ying Zhao ◽  
Guosong Wu ◽  
Qiuyuan Lu ◽  
Jun Wu ◽  
Ruizhen Xu ◽  
...  
Keyword(s):  
Corrosion Resistance ◽  
Magnesium Alloy ◽  
Ion Implantation ◽  
Surface Corrosion ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
We43 Magnesium Alloy

Microstructural and Compositional Characterization of SiC-On-Insulator Structures

1999 ◽  
Vol 5 (S2) ◽  
pp. 770-771
Author(s):  
Manabu Ishimaru ◽  
Robert M. Dickerson ◽  
Kurt E. Sickafus
Keyword(s):  
Ion Implantation ◽  
Integrated Circuit ◽  
High Speed ◽  
Scanning Transmission Electron Microscope ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Oxygen Ion Implantation

As the size of Si integrated circuit structures is continually reduced, interest in semiconductor-oninsulator (SOI) structures has heightened. SOI structures have already been developed for Si using oxygen ion implantation. However, the application of Si devices is limited due to the physical properties of Si. As an alternative to Si, SiC is a potentially important semiconductor for high-power, high-speed, and high-temperature electronic devices. Therefore, this material is a candidate for expanding the capabilities of Si-based technology. In this study, we performed oxygen ion implantation into bulk SiC to produce SiC-on-insulator structures. We examined the microstructures and compositional distributions in implanted specimens using transmission electron microscopy and a scanning transmission electron microscope equipped with an energy-dispersive X-ray spectrometer (STEM-EDX).Figures 1(a) and 2(a) show bright-field images of 6H-SiC implanted with 180 keV oxygen ions at 650 °C to fluences of 7xl017 and 1.4xl018 cm−2, respectively. Three regions with distinct image contrast are apparent in Figs. 1(a) and 2(a), as indicated by A, B, and C.

Nucleation & Growth of Octahedral Oxide Particles in Silicon: Oxygen Ion Implantation

1985 ◽  
Vol 59 ◽  
Author(s):  
R. W. Carpenter ◽  
G. Vanderschaeve ◽  
C. J. Varkera ◽  
S. R. Wilson
Keyword(s):  
Ion Implantation ◽  
High Density ◽  
Czochralski Silicon ◽  
Oxygen Ion ◽  
Oxide Particles ◽  
Oxygen Ion Implantation ◽  
Silicon Oxygen ◽  
Plate Type ◽  
Nucleation Growth

ABSTRACTCzochralski silicon was implanted with oxygen at 0.4 and 3.5MeV to obtain concentrations near 1020 oxygen/cm3 in the implanted region. Following implantation the wafers were aged at about 1000°C for 7 hours, and the resulting precipitates were examined by HREM. A high density of octahedral SiOx precipitates (∼1015/cm3) was the dominant morphology. Plate type precipitates and dislocations were also present at lower density. The data indicate octahedra grow from the plates.

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