X-Ray Measurements of Lattice Strain in Doped Epitaxial Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
A. P. Pogany ◽  
T. E. Preuss
Keyword(s):  
Laser Annealing ◽  
Lattice Strain ◽  
Covalent Radius ◽  
Epitaxial Silicon ◽  
Double Crystal ◽  
Strain Measurements ◽  
Strain Profile ◽  
One Dimensional ◽  
X Ray ◽  
Pulsed Laser Annealing

ABSTRACT(100) silicon amorphized by antimony ion implantation was epitaxially regrown by either furnace or pulsed laser annealing. Rocking curves were measured on a double-crystal X-ray diffractometer, and compared with calculations based on a one-dimensional strain profile. For laser annealed samples the strain profile followed that of the antimony (redistributed by surface melting), with a proportionality constant given by the Pauling covalent radius ratio. For furnace annealed samples however the strain was found to be deeper, but of smaller peak magnitude, than that expected from the antimony distribution. This is attributed to formation and movement of defects acting to relax lattice strain. Other X-ray strain measurements on epitaxial silicon containing other dòpants are briefly reviewed.

Formalism for the determination of intermediate stress gradients using X-ray diffraction

2009 ◽  
Vol 42 (2) ◽  
pp. 192-197 ◽  
Author(s):  
Thomas Gnäupel-Herold
Keyword(s):  
Lattice Strain ◽  
Narrow Line ◽  
X Ray Diffraction ◽  
Beam Spot ◽  
Strain Measurements ◽  
One Dimensional ◽  
X Ray ◽  
Stress Gradients ◽  
Shaped Beam

A method is outlined that allows the determination of one-dimensional stress gradients at length scales greater than 0.2 mm. By using standard four-circle X-ray diffractometer equipment and simple aperture components, length resolutions down to 0.05 mm in one direction can be achieved through constant orientation of a narrow, line-shaped beam spot. Angle calculations are given for the adjustment of goniometer angles, and for the effective azimuth and tilt of the scattering vector for general angle settings in a four-circle goniometer. The latter is necessary for the computation of stresses from lattice strain measurements.

Lattice Strain from Holes in Heavily Doped Si:Ga

1989 ◽  
Vol 147 ◽  
Author(s):  
K. L. Kavanagh ◽  
G. S. Cargill ◽  
R. F. Boehme ◽  
J. C. P. Chang
Keyword(s):  
Experimental Error ◽  
Laser Annealing ◽  
Lattice Strain ◽  
Nearest Neighbor ◽  
X Ray Diffraction ◽  
Lattice Contraction ◽  
Double Crystal ◽  
X Ray ◽  
Heavily Doped ◽  
X Ray Absorption

AbstractHeavily doped Si:Ga has been prepared by liquid phase epitaxy (LPE) and by ionimplantation with rapid thermal annealing (RTA) or laser annealing (LA). Peak substitutional Ga concentrations obtained by each technique were 1.5, 2.5 and 2.9 ×1020cm-3, respectively. Substitutional fractions (>90%) were similar in the three types of samples, and the conductivity scaled with the total Ga concentration. A lattice expansion per substitutional Ga atom in Si of +0.9 ± 0. l×10-24cm3 /atom was measured by double crystal x-ray diffraction. The average nearest neighbor Si-Ga bond length measured with extended x-ray absorption fine structure (EXAFS) was 0.237 ± 0.004 nm, indistinguishable, to within experimental error, from the intrinsic Si-Si bond lngth, 0.235 nm. Combining these two results the lattice strain per hole in the Si valence band was calculated, +0.4 ± 0.8x10G-cm3. This result complements the lattice contraction per electron in the Si conduction band (-1.8 ± 0.4x10-24cm 3) already reported for Si:As [G. S. Cargill III, J. Angilelloand K. L. Kavanagh, Phys. Rev. Letters 61, 1748 (1988)].

Double-Crystal X-ray Diffraction Studies of Si ion-Implanted and Pulsed Laser-Annealed GaAs

1990 ◽  
Vol 34 ◽  
pp. 531-541
Author(s):  
P. M. Adams ◽  
J. F. Knudsen ◽  
R. C. Bowman
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
Double Crystal ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Microelectronic Devices

Ion-implantation has many applications in the fabrication and processing of microelectronic devices from semiconductors, but thermal treatments are required to remove defects produced by the implant and to electrically activate dopants. Recently, pulsed laser annealing has been used to activate surface layers of GaAs that have been heavily doped with 28Si+ by ion implantation, and carrier concentrations of > 1 x 1019 cm-3 have been achieved (Ref. 1). Double-crystal x-ray diffraction techniques are very sensitive to strains and defects in single crystals and provide a means for characterizing and quantifying the damage produced by ion-implantation and the subsequent relief of damage by pulsed laser annealing.

X-ray measurement of minute lattice strain in perfect silicon crystals

1981 ◽  
Vol 156 (3-4) ◽  
Author(s):  
U. Bonse ◽  
I. Hartmann
Keyword(s):  
Residual Strain ◽  
Lattice Strain ◽  
High Sensitivity ◽  
Neutron Interferometry ◽  
Double Crystal ◽  
Strain Measurements ◽  
X Ray ◽  
Silicon Crystals ◽  
Float Zone ◽  
Quantitative Manner

AbstractThe residual strain still present in nearly perfect silicon single crystals has been measured quantitatively by using double crystal topography at high reflexion orders.High quality float zone crystals from different suppliers were found to vary in residual strain from 2 × 10The high sensitivity strain measurements are very useful to measure in a quantitative manner the degree of lattice perfection of so-called nearly perfect crystals. The results are already useful for neutron interferometry and, possibly, may become so for microintegration of devices.

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

Nanosecond resolved X-ray diffraction during pulsed laser annealing of silicon

1983 ◽  
Vol 208 (1-3) ◽  
pp. 511-517 ◽  
Author(s):  
D.M. Mills ◽  
B.C. Larson ◽  
C.W. White ◽  
T.S. Noggle
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing

X-Ray Investigations of Dislocations in an Implanted Si Crystal Induced by Pulsed Laser Annealing

1995 ◽  
Vol 147 (2) ◽  
pp. K69-K71 ◽  
Author(s):  
J. Auleytner ◽  
M. Skorokhod ◽  
L. Datsenko ◽  
V. Khrupa ◽  
A. Briginets
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray ◽  
Pulsed Laser Annealing

Damage Removal and Activation in Rapid-Thermally-Annealed Silicon Implanted Semi-Insulating GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
J. L. Tandon ◽  
J. H. Madok ◽  
I. S. Leybovich ◽  
G. Bai
Keyword(s):  
Electron Concentration ◽  
Lattice Strain ◽  
Extended Defects ◽  
Strain Measurements ◽  
X Ray ◽  
Depth Profiles ◽  
Annealing Temperatures ◽  
Implantation Damage ◽  
Long Tails ◽  
Concentration Depth Profiles

ABSTRACTIn the Rapid-Thermal-Annealing of Si-implanted undoped semi-insulating GaAs three regimes are broadly identified. At ˜ 600°C, ion implantation damage is largely removed, as indicated by lattice-strain measurements performed by X-ray rocking curves. Between ˜ 600 – 900°C, “extended defects”, which presumably account for the long tails in the electron concentration depth profiles, are annealed. Higher annealing temperatures in this range result in profiles with successively shorter tails. Finally, beyond ˜ 900°C, “acceptor levels” in the material are revealed, which become effective in compensating the Si activation.

X-ray studies: CO2 pulsed laser annealing effects on the crystallographic properties, microstructures and crystal defects of vacuum-deposited nanocrystalline ZnSe thin films

CrystEngComm ◽  
2018 ◽  
Vol 20 (44) ◽  
pp. 7120-7129 ◽  
Author(s):  
Ahmed Saeed Hassanien ◽  
Alaa A. Akl
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Crystal Defects ◽  
Microstructural Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Annealing Effects ◽  
Znse Thin Films

The influence of CO2 pulsed laser annealing on microstructural properties and crystal defects of nanocrystalline ZnSe thin films have been studied. X-ray diffraction was utilized to study these issues. Laser annealing led to enhance the film quality and decrease the crystal defects.

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