Hydrogen Diffusion Between Plasma-Deposited Silicon Nitridepolyimide Polymer Interfaces

1987 ◽  
Vol 108 ◽  
Author(s):  
Son Van Nguyen ◽  
Mike Kerbaugh
Keyword(s):  
Silicon Nitride ◽  
Depth Profile ◽  
Etch Rate ◽  
Hydrogen Diffusion ◽  
Annealing Treatment ◽  
Film Deposition ◽  
Nuclear Reaction Analysis ◽  
Nitride Film ◽  
Rate Variation ◽  
Plasma Etch

ABSTRACTA Nuclear Reaction Analysis (NRA) for Hydrogen technique was used to analyze the hydrogen concentration near Plasma Enchanced Chemical Vapor Deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF4 + O2 (8% O2) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate.

scholarly journals Improvement of Silicon Nitride Film Deposition Rate by Low Frequency Double Plasma CVD Methode.

Shinku ◽  
1991 ◽  
Vol 34 (4) ◽  
pp. 427-431
Author(s):  
Mitsuo. SHIMOZUMA ◽  
Jin. MURAKAMI ◽  
Gen. TOCHITANI ◽  
Takashi. TSUJI ◽  
Hiroaki. TAGASHIRA
Keyword(s):  
Silicon Nitride ◽  
Deposition Rate ◽  
Low Frequency ◽  
Film Deposition ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Cvd ◽  
Film Deposition Rate

Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp

2007 ◽  
Vol 46 (6A) ◽  
pp. 3534-3536 ◽  
Author(s):  
Yoshinari Maezono ◽  
Kiyohiko Toshikawa ◽  
Kou Kurosawa ◽  
Kouichi Amari ◽  
Sou Ishimura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Vapor Deposition ◽  
Film Deposition ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Excimer Lamp ◽  
Photochemical Vapor Deposition

Hydrogen in RF Reactive Magnetron Sputtered Silicon Nitride Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Chi-Hsien Lin ◽  
J. B. Wachtman ◽  
G. H. Sigel ◽  
R. L. Pfeffer ◽  
T. P. Monahan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Etch Rate ◽  
Hydrogen Gas ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Reactive Magnetron ◽  
Diffusion Behavior ◽  
Silicon Nitride Films ◽  
Silicon Target ◽  
Secondary Ion

ABSTRACTABSTRACT: Silicon nitride films (a-SixN1−x:H) have been prepared by rf reactive magnetron sputtering from a silicon target in a mixture gas of Ar, N2, and H2. The effects of the presence of hydrogen gas have been related to the refractive index, deposition rate, etch rate, and the Si-H and N-H bonding in the films. Hydrogen contents were measured by a quadrupole secondary ion mass spectrometer (SIMS) using deuterium implanted samples as reference standards. The deuterium implanted samples were annealed at 900°C for various periods of time to study the diffusion behavior of deuterium and hydrogen in a Si-rich and a nearly stoichiometric silicon nitride film.

Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

2009 ◽  
Vol 30 (9) ◽  
pp. 096005 ◽  
Author(s):  
Tang Longjuan ◽  
Zhu Yinfang ◽  
Yang Jinling ◽  
Li Yan ◽  
Zhou Wei ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Etch Rate ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Annealing Conditions ◽  
Wet Etch

PECVD Silicon Nitride for Damascene Applications

2002 ◽  
Vol 715 ◽  
Author(s):  
Albert Lee ◽  
Nagarajan Rajagopalan ◽  
Maggie Le ◽  
Bok Heon Kim ◽  
Hichem M'Saad
Keyword(s):  
Silicon Nitride ◽  
Etch Rate ◽  
Barrier Properties ◽  
Dielectric Materials ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Nitride Layers ◽  
Wet Etch

AbstractA Pecvd silicon nitride film, Damascene Nitride™, is deposited in a PECVD chamber with a hollow cathode faceplate using silane and ammonia as precursor gases. Various techniques (FTIR, RBS-HFS, SIMS, TDS and BTS) were used to characterize the structure, composition, density and wet etch rate of the film. FTIR analysis indicates that Damascene Nitride is very similar to a high density plasma (HDP) nitride film. HFS analysis shows the film's hydrogen content to be 13%,∼6% less than other PECVD nitride films, leading to a 20% improvement in etch selectivity to FSG. The film wet etch rate is 2 times slower than that of other PECVD nitrides, and the dielectric constant k was measured to be 6.8, which is lower compared to other PECVD nitrides and HDP CVD nitrides where k∼ 7.0 and 7.5, respectively. SIMS analysis shows that Cu diffusion is <250Å in the nitride, and low leakage current (10-10 A) is confirmed through BTS testing. The higher density of Damascene Nitride leads to higher etch selectivity and better Cu barrier properties, allowing a thinner nitride film to be used. Thinner nitride layers, in addition to the lower k of Damascene Nitride, leads to a 5-6% reduction in RC delay when Damascene Nitride is used with low k dielectric materials.

Large Area Plasma Enhanced Chemical Vapor Deposition of Nonstoichiometric Silicon Nitride

1992 ◽  
Vol 282 ◽  
Author(s):  
Yue Kuo
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Etch Rate ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Gas Composition ◽  
Large Area ◽  
Film Properties ◽  
Low Refractive Index

ABSTRACTThis paper presents results on PECVD of low refractive index silicon nitride in a large area system. Film deposition characteristics, suchas deposition rate and thickness uniformity, were investigated over awide range of process parameters, such as gas composition, power, pressure, and N2 pressure. Film properties, such as RI, absorbance, stress, and etch rate, have also been studied. A general model, which includes both the deposition and etching mechanisms, has been developed to explain these results. This model could explain the film uniformity issue in the process.

Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature

2008 ◽  
Vol 92 (17) ◽  
pp. 172107 ◽  
Author(s):  
Manav Sheoran ◽  
Dong Seop Kim ◽  
Ajeet Rohatgi ◽  
H. F. W. Dekkers ◽  
G. Beaucarne ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Hydrogen Diffusion ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Chemical Vapor Deposited
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