Large Area Plasma Enhanced Chemical Vapor Deposition of Nonstoichiometric Silicon Nitride

1992 ◽  
Vol 282 ◽  
Author(s):  
Yue Kuo
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Etch Rate ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Gas Composition ◽  
Large Area ◽  
Film Properties ◽  
Low Refractive Index

ABSTRACTThis paper presents results on PECVD of low refractive index silicon nitride in a large area system. Film deposition characteristics, suchas deposition rate and thickness uniformity, were investigated over awide range of process parameters, such as gas composition, power, pressure, and N2 pressure. Film properties, such as RI, absorbance, stress, and etch rate, have also been studied. A general model, which includes both the deposition and etching mechanisms, has been developed to explain these results. This model could explain the film uniformity issue in the process.

High Quality RTCVD Sidewall Spacer Dielectrics

1995 ◽  
Vol 387 ◽  
Author(s):  
D. S. Miles ◽  
M. R. Mirabedini ◽  
D. Venables ◽  
J. J. Wortman ◽  
D. M. Maher
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Etch Rate ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
Structural Quality ◽  
Aspect Ratios ◽  
Wide Range

AbstractRapid thermal chemical vapor deposition (RTCVD) has been investigated as an alternative to low pressure chemical vapor deposition (LPCVD) for formation of sidewall spacer dielectric. Silane (SiH 4 ) and tetraethylorthosilicate (TEOS) were chosen as the silicon gas sources in these studies. Reasonable deposition rates were obtained for RTCVD oxides, oxynitrides and nitrides for use in thin sidewall spacer application. Refractive index and etch rate measurements suggest that oxides deposited with a 2 % flow rate ratio of SiH 4 /N2O and annealed at 900 °C for 10 seconds produces films with excellent structural quality. Refractive index and wet etch rate both exhibit a linear dependence with the gas flow ratio. An increase in deposition pressure decreased the refractive index while increasing the etch rate. Oxide and oxynitride dielectrics formed using SiH 4 had a much superior step coverage over a wide range of aspect ratios than TEOS dielectrics. Dit and breakdown fields for oxides and oxynitrides with 3 atomic % nitrogen were comparable to that of thermal oxide indicating their good electrical quality. The results reported suggest that RTCVD sidewall spacers are a promising candidate for use in future MOSFET devices.

High Hydrogen Content Silicon Nitride For Photovoltaic Applications Deposited By Hot-Wire Chemical Vapor Deposition

2002 ◽  
Vol 715 ◽  
Author(s):  
Jason K. Holt ◽  
Maribeth Swiatek ◽  
David G. Goodwin ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Flow Ratio ◽  
Hot Wire ◽  
Film Properties ◽  
High Hydrogen ◽  
Silicon Nitride Films ◽  
Photovoltaic Applications

AbstractSilicon nitride films have been grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. Quadrupole mass spectrometry measurements revealed that NH3 should be present in large excess relative to SiH4 (<10), due to its lower decomposition probability on the wire. Silicon nitride films were produced with refractive indices ranging from 1.8-2.5 and H-content from 9-18 atomic % as the flow ratio increased from 1% to 8%. Fourier Transform Infrared Spectroscopy revealed a change from predominantly N-H to Si-H bonding as the flow ratio increases beyond 6%. Subsequent annealing studies showed different kinetics for H release from Si versus N. Films grown with a low SiH4/NH3 ratio were found to oxidize readily (23 atomic %), while larger ratios yielded no oxygen incorporation.

Effect of growth parameters on refractive index and film composition of plasma enhanced chemical vapor deposition silicon oxynitride films

2004 ◽  
Vol 848 ◽  
Author(s):  
S. Naskar ◽  
C. A. Bower ◽  
L. N. Yadon ◽  
S.D. Wolter ◽  
B.R. Stoner ◽  
...  
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Film Properties ◽  
Film Composition ◽  
Material Chemistry ◽  
Deposition Conditions

ABSTRACTThe importance of silicon oxynitride (SiOxNy) for optoelectronic device applications is ever increasing owing to its tunable refractive index. In this research, the influence of deposition conditions on film properties, correlated with film composition and bonding, have been investigated. Thick SiOxNy films were deposited in a plasma enehanced chemical vapor deposition reactor using silane (SiH4) and nitrous oxide (N2O) as precursor gases. To investigate the influence of deposition conditions on film properties, three different parameters were studied; gas flow ratio, RF plasma mixed frequency ratio and RF power. Several different SiOxNy films were deposited at varying conditions. The temperature and pressure were maintained at 350°C and 1 Torr during all the experimental runs. The films were characterized for refractive index, growth rate and residual stress. The refractive index and the thickness of the films were measured using a prism-coupling technique. For composition analysis, x-ray photoelectron spectroscopy studies and elastic recoil detection analysis were undertaken. The materials analysis was used to determine the correlation between growth parameters and material chemistry. In addition, the correlation between material chemistry and refractive index was also investigated.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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