Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature

2008 ◽  
Vol 92 (17) ◽  
pp. 172107 ◽  
Author(s):  
Manav Sheoran ◽  
Dong Seop Kim ◽  
Ajeet Rohatgi ◽  
H. F. W. Dekkers ◽  
G. Beaucarne ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Hydrogen Diffusion ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Chemical Vapor Deposited

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

The Effects of Chemical Vapor Cleaning Chemistries on Silicon Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
S.E. Beck ◽  
A.G. Gilicinski ◽  
B.S. Felker ◽  
J.G. Langan ◽  
D.A. Bohling ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Treatment ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Silicon Surfaces ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Thin Silicon

ABSTRACTThis study explores the effects of two chemical vapor cleaning chemistries on silicon surfaces. The silicon surfaces are not significantly roughened by exposure to either process. Trace amounts of fluorine are found on the surfaces exposed to 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (HFAC). A thin silicon nitride film forms on the silicon surface as a result of exposure to the HMDS process and is attributed to the H2/N2 plasma treatment used in the first step of the process.

Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KD12 ◽  
Author(s):  
Ken Mishina ◽  
Atsufumi Ogishi ◽  
Kiyoshi Ueno ◽  
Sachiko Jonai ◽  
Norihiro Ikeno ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
High Resistance ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film

Reaction study of cobalt and silicon nitride

1993 ◽  
Vol 8 (9) ◽  
pp. 2354-2361 ◽  
Author(s):  
Tue Nguyen ◽  
Herbert L. Ho ◽  
David E. Kotecki ◽  
Tai D. Nguyen
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Nitride Film ◽  
Cobalt Silicide ◽  
Physical Damage ◽  
Reaction Study ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

The interaction of cobalt (Co) and low-pressure chemical-vapor-deposited silicon nitride (LPCVD Si3N4) during anneals from 200 °C−1000 °C in vacuum, Ar, and Ar–H2 ambient (95% Ar and 5% H2) has been studied. After the anneals, reduction of Si3N4 by Co to form cobalt silicide and cobalt nitride phases has been observed. Reduction of Si3N4 initially occurs at 600 °C; however, gross physical damage occurs at temperatures of ∼900 °C in Ar. The addition of hydrogen to the ambient enhances the onset of physical damage to the nitride film by as much as 200 °C. Mechanisms governing the Co/Si3N4 reaction have been proposed.

In Situ Contamination Control Investigation of Silicon Nitride Low Pressure Chemical Vapor Deposition Process in Vertical Thermal Reactors

1992 ◽  
Vol 259 ◽  
Author(s):  
Mansour Moinpour ◽  
K. Bohannan ◽  
M. Shenasa ◽  
A. Sharif ◽  
G. Guzzo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Contamination Control ◽  
Pressure Chemical

ABSTRACTA contamination control study of a Silicon Valley Group Thermco Systems Vertical Thermal Reactor(VTR) is presented. Trace elements of contaminants such as water vapor and oxygen have been shown to significantly affect the integrity of the silicon nitride film deposited by the low pressure chemical vapor deposition (LPCVD) process. This study documented the effects of process parameters on gaseous contamination levels, i.e., O2 and H2O vapor. Starting with a baseline process, the effects of an excursion of pre-deposition temperature ramp-up and stabilization condition, wafer load/unload and various post deposition conditions were explored. An axial profile of moisture and oxygen levels along the wafer load was obtained using Linde's Low Pressure Reactor Analysis(LPRAS) methodology. In addition, other process parameters such as gas flow rates during load and unload of wafers, pre-deposition N2 purge and process tube exposure time to ambient environment were- investigated. The wafers were analyzed for contaminants on the wafer surface or in the deposited silicon nitride film using FTIR and Auger spectroscopy techniques. They showed low levels of Si-O and no measurable Si-H or N-H bonds.

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