Silicon nitride film deposition by hot-wall plasma-enhanced CVD for GaAs LSI

1984 ◽  
Vol 2 (1) ◽  
pp. 49 ◽  
Author(s):  
Yasunobu Ishii
Keyword(s):  
Silicon Nitride ◽  
Film Deposition ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Enhanced Cvd

scholarly journals Improvement of Silicon Nitride Film Deposition Rate by Low Frequency Double Plasma CVD Methode.

Shinku ◽  
1991 ◽  
Vol 34 (4) ◽  
pp. 427-431
Author(s):  
Mitsuo. SHIMOZUMA ◽  
Jin. MURAKAMI ◽  
Gen. TOCHITANI ◽  
Takashi. TSUJI ◽  
Hiroaki. TAGASHIRA
Keyword(s):  
Silicon Nitride ◽  
Deposition Rate ◽  
Low Frequency ◽  
Film Deposition ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Cvd ◽  
Film Deposition Rate

Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp

2007 ◽  
Vol 46 (6A) ◽  
pp. 3534-3536 ◽  
Author(s):  
Yoshinari Maezono ◽  
Kiyohiko Toshikawa ◽  
Kou Kurosawa ◽  
Kouichi Amari ◽  
Sou Ishimura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Vapor Deposition ◽  
Film Deposition ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Excimer Lamp ◽  
Photochemical Vapor Deposition

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

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