Hydrogen in RF Reactive Magnetron Sputtered Silicon Nitride Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Chi-Hsien Lin ◽  
J. B. Wachtman ◽  
G. H. Sigel ◽  
R. L. Pfeffer ◽  
T. P. Monahan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Etch Rate ◽  
Hydrogen Gas ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Reactive Magnetron ◽  
Diffusion Behavior ◽  
Silicon Nitride Films ◽  
Silicon Target ◽  
Secondary Ion

ABSTRACTABSTRACT: Silicon nitride films (a-SixN1−x:H) have been prepared by rf reactive magnetron sputtering from a silicon target in a mixture gas of Ar, N2, and H2. The effects of the presence of hydrogen gas have been related to the refractive index, deposition rate, etch rate, and the Si-H and N-H bonding in the films. Hydrogen contents were measured by a quadrupole secondary ion mass spectrometer (SIMS) using deuterium implanted samples as reference standards. The deuterium implanted samples were annealed at 900°C for various periods of time to study the diffusion behavior of deuterium and hydrogen in a Si-rich and a nearly stoichiometric silicon nitride film.

scholarly journals Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Bangwu Liu ◽  
Sihua Zhong ◽  
Jinhu Liu ◽  
Yang Xia ◽  
Chaobo Li
Keyword(s):  
Solar Cell ◽  
Silicon Nitride ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Black Silicon ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Silicon Nitride Films ◽  
Plasma Immersion Ion Implantation

The passivation process is of significant importance to produce high-efficiency black silicon solar cell due to its unique microstructure. The black silicon has been produced by plasma immersion ion implantation (PIII) process. And the Silicon nitride films were deposited by inline plasma-enhanced chemical vapor deposition (PECVD) to be used as the passivation layer for black silicon solar cell. The microstructure and physical properties of silicon nitride films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, and the microwave photoconductance decay (μ-PCD) method. With optimizing the PECVD parameters, the conversion efficiency of black silicon solar cell can reach as high as 16.25%.

Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

2009 ◽  
Vol 30 (9) ◽  
pp. 096005 ◽  
Author(s):  
Tang Longjuan ◽  
Zhu Yinfang ◽  
Yang Jinling ◽  
Li Yan ◽  
Zhou Wei ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Etch Rate ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Annealing Conditions ◽  
Wet Etch

PECVD Silicon Nitride for Damascene Applications

2002 ◽  
Vol 715 ◽  
Author(s):  
Albert Lee ◽  
Nagarajan Rajagopalan ◽  
Maggie Le ◽  
Bok Heon Kim ◽  
Hichem M'Saad
Keyword(s):  
Silicon Nitride ◽  
Etch Rate ◽  
Barrier Properties ◽  
Dielectric Materials ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Nitride Layers ◽  
Wet Etch

AbstractA Pecvd silicon nitride film, Damascene Nitride™, is deposited in a PECVD chamber with a hollow cathode faceplate using silane and ammonia as precursor gases. Various techniques (FTIR, RBS-HFS, SIMS, TDS and BTS) were used to characterize the structure, composition, density and wet etch rate of the film. FTIR analysis indicates that Damascene Nitride is very similar to a high density plasma (HDP) nitride film. HFS analysis shows the film's hydrogen content to be 13%,∼6% less than other PECVD nitride films, leading to a 20% improvement in etch selectivity to FSG. The film wet etch rate is 2 times slower than that of other PECVD nitrides, and the dielectric constant k was measured to be 6.8, which is lower compared to other PECVD nitrides and HDP CVD nitrides where k∼ 7.0 and 7.5, respectively. SIMS analysis shows that Cu diffusion is <250Å in the nitride, and low leakage current (10-10 A) is confirmed through BTS testing. The higher density of Damascene Nitride leads to higher etch selectivity and better Cu barrier properties, allowing a thinner nitride film to be used. Thinner nitride layers, in addition to the lower k of Damascene Nitride, leads to a 5-6% reduction in RC delay when Damascene Nitride is used with low k dielectric materials.

Molecular Dynamics Study of Nano-Tribological Properties of Silicon Nitride Films

2014 ◽  
Author(s):  
Longqiu Li ◽  
Shufeng Wang ◽  
Andrey Ovcharenko ◽  
Wuyi Wang
Keyword(s):  
Molecular Dynamics ◽  
Silicon Nitride ◽  
Friction Coefficient ◽  
Tribological Properties ◽  
Crystalline Silicon ◽  
High Hardness ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Friction Resistance ◽  
Silicon Nitride Films

Silicon nitride films were attracting extensive research interest in the past few decades as hard disk protective coating, especially the beta-silicon nitride (β-Si3N4) films and amorphous silicon nitride (SiNx) films, which have high hardness, chemical durability and low friction coefficient properties against wear, corrosion and reducing the friction resistance, respectively. Considerable efforts have been made in studying silicon nitride. However, it’s difficult to determine its nano-tribological properties experimentally since the results were affected by a lot of contact and environment conditions. The molecular dynamics (MD) simulation method is employed in this work. A rigid diamond sphere modeled as a spherical tip are sliding over a layered silicon nitride film substrate, respectively, to investigate the tribological properties of silicon nitride films. The effect of the relative sliding velocity and sliding direction, the normal force and the thickness of crystalline silicon nitride films on the friction coefficient of silicon nitride films were investigated.

Infrared ellipsometric characterization of silicon nitride films on textured Si photovoltaic cells

2008 ◽  
Vol 1123 ◽  
Author(s):  
M. F. Saenger ◽  
M. Schädel ◽  
T. Hofmann ◽  
J. Hilfiker ◽  
J. Sun ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Dielectric Function ◽  
Photovoltaic Cells ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Si Substrates ◽  
Silicon Nitride Films ◽  
Ellipsometric Characterization ◽  
Analysis Scheme ◽  
Multiple Sample

AbstractWe present an infrared spectroscopic ellipsometry investigation of SixNy films deposited on textured Si substrates employed for photovoltaic cells. A multiple-sample data analysis scheme is used in order to determine the SixNy dielectric function and thickness parameters regardless of the surface morphology of the substrate. We observe changes in the dielectric function of the silicon nitride film which suggest variations in the chemical composition of the films depending on the substrate morphology.

Low Temperature Formation of Silicon Nitride Film: Combination of Catalytic-Nitridation and Catalytic-CVD

2002 ◽  
Vol 715 ◽  
Author(s):  
A. Izumi ◽  
A. Kikkawa ◽  
H. Matsumura
Keyword(s):  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Silicon Nitride Films ◽  
Voltage Curve ◽  
Capacitance Voltage ◽  
Injection Type ◽  
Substrate Temperatures

AbstractIn this work silicon nitride films are formed as substrate temperatures 250°C by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that inserting nitridation layer about 2 nm-thick before growing the silicon nitride films, injection-type hysteresis of capacitance-voltage curve is drastically reduced from 1.4 V to 0.05 V for 40 nm-thick SiNx.

Plasma Deposited Silicon Nitride Film Chemistry

1989 ◽  
Vol 165 ◽  
Author(s):  
Justin N. Chiang ◽  
Dennis W. Hess
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Gas Composition ◽  
Stainless Steel Mesh ◽  
Film Composition ◽  
X Ray ◽  
Silicon Nitride Films

AbstractThe structure and composition of plasma deposited (PD) silicon nitride thin films formed using NH3/SiH4, N2/SiH4, and N2/SiH4/H2, discharges are compared. The effect of introducing a DC grounded stainless steel mesh between the parallel electrodes is also discussed. Chemical structure and composition of these films are measured using X-ray Photoelectron Spectroscopy and Fourier Transform Infrared Spectroscopy. Significant changes in film composition are observed with changes in gas composition and with utilization of the screen. When the screen is invoked, variations in film composition are more pronounced for PD silicon nitride films formed using N2 as the nitrogen source. An increase in the N:Si ratio occurs for all films deposited using the screen. This compositional change is reflected in increased N-H and decreased Si-H bonding. Similar changes are also observed in films deposited from a N2/SiH4/H2 discharge compared to films formed using a N2/SiH4 discharge.

Hydrogen Bond Configuration Changes in PECVD Silicon Nitride Films During RTA

1995 ◽  
Vol 377 ◽  
Author(s):  
S. S. He ◽  
V. L. Shannon
Keyword(s):  
Silicon Nitride ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Dual Frequency ◽  
Silicon Nitride Films ◽  
Parallel Plate Reactor ◽  
Nitrogen Mixture ◽  
Configuration Changes ◽  
Deposited Film ◽  
Hydrogen Effusion

ABSTRACTPECVD silicon rich (x<4/3) and nitrogen rich (x>4/3) silicon nitride films have been deposited using a silane, ammonia, and nitrogen mixture at 400°C in a dual frequency parallel plate reactor. From FTIR measurements, most of the bonded hydrogen was observed to be present as N-H in the nitrogen rich films and as Si-H in the silicon rich films. In this study, the movement of hydrogen in the various nitride films as a result of Rapid Thermal Annealing (RTA) in N2 for 30 seconds has been investigated. While the intensity of the N-H stretching band was always found to decrease from that measured for the as-deposited film, the intensity of the Si-H stretching band was observed to increase for anneal temperatures up to 650°C. During the anneal process some hydrogen effusion takes place and some of hydrogen changes its bonding to silicon atoms from previous nitrogen atoms in the film. Consistent with the FTIR results, Hydrogen Forward Scattering (HFS), shows that only a small amount of hydrogen effuses from the silicon nitride film as a result of the RTA process below 650°C.

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