Surfaces and Interfaces for Controlled Defect Engineering

2008 ◽  
Vol 1070 ◽  
Author(s):  
Edmund G. Seebauer
Keyword(s):  
Integrated Circuits ◽  
Point Defects ◽  
Chemical State ◽  
Defect Engineering ◽  
Dopant Activation ◽  
Enhanced Diffusion ◽  
Surfaces And Interfaces ◽  
Transient Enhanced Diffusion ◽  
Ultrashallow Junction

ABSTRACTThe behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.

Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-doped Layers

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Halimaoui ◽  
J. M. Hartmann ◽  
C. Laviron ◽  
R. El-Farhane ◽  
F. Laugier
Keyword(s):  
Point Defects ◽  
Depth Profiling ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
Sims Depth Profiling

ABSTRACTPreviously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.

Application of High Energy Ion Beam on the Control of Boron Diffusion

2003 ◽  
Vol 792 ◽  
Author(s):  
Wei-Kan Chu ◽  
Lin Shao ◽  
Jiarui Liu
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Anomalous Diffusion ◽  
Ion Beam ◽  
Surface Region ◽  
High Energy ◽  
Boron Diffusion ◽  
Defect Engineering ◽  
Projected Range ◽  
Ultrashallow Junction

ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.

Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

1997 ◽  
Vol 469 ◽  
Author(s):  
N. E. B. Cowern ◽  
E. J. H. Collart ◽  
J. Politiek ◽  
P. H. L. Bancken ◽  
J. G. M. Van Berkum ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Crystalline Silicon ◽  
Cmos Technology ◽  
Low Energy ◽  
Defect Engineering ◽  
Enhanced Diffusion ◽  
Physical Mechanisms ◽  
Transient Enhanced Diffusion ◽  
Junction Formation ◽  
Silicon Cmos

ABSTRACTLow energy implantation is currently the most promising option for shallow junction formation in the next generations of silicon CMOS technology. Of the dopants that have to be implanted, boron is the most problematic because of its low stopping power (large penetration depth) and its tendency to undergo transient enhanced diffusion and clustering during thermal activation. This paper reports recent advances in our understanding of low energy B implants in crystalline silicon. In general, satisfactory source-drain junction depths and sheet resistances are achievable down to 0.18 micron CMOS technology without the need for implantation of molecular species such as BF2. With the help of defect engineering it may be possible to reach smaller device dimensions. However, there are some major surprises in the physical mechanisms involved in implant profile formation, transient enhanced diffusion and electrical activation of these implants, which may influence further progress with this technology. Some initial attempts to understand and model these effects will be described.

The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation

2005 ◽  
Vol 864 ◽  
Author(s):  
Min Yu ◽  
Xiao Zhang ◽  
Ru Huang ◽  
Xing Zhang ◽  
Yangyuan Wang ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Integrated Circuits ◽  
Point Defects ◽  
Model Simulation ◽  
Kinetic Monte Carlo ◽  
Boron Diffusion ◽  
Junction Depth ◽  
Kinetic Monte Carlo Method ◽  
Enhanced Diffusion

AbstractBehavior of point defects in annealing is investigated a lot in order to suppress the Transient Enhanced Diffusion (TED) of boron as is urged by the development of integrated circuits. Surface annihilation possibility for point defects is very important in determining junction depth in the case of ultra-shallow doping. However the understanding on it is still ambiguous considering the inconsistent results on surface annihilation behavior. In this paper the variation of surface annihilation possibility is studied. The simulation on boron diffusion as well as silicon diffusion is performed. The evolution of Si clusters is simulated. By explaining experimental results with Kinetic Monte Carlo method based simulation, we proposed that surface annihilation possibility varies in different cases.

Transient Enhanced Diffusion in B+ and P+ Implanted Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
S. J. Pennycook ◽  
R. J. Culbertson
Keyword(s):  
Heat Treatment ◽  
Point Defects ◽  
Diffusion Coefficients ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Dependent ◽  
Enhanced Diffusion ◽  
Thermally Activated ◽  
Transient Enhanced Diffusion ◽  
And Diffusion

AbstractWe report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon

1998 ◽  
Vol 532 ◽  
Author(s):  
Ning Yu ◽  
Amitabh Jain ◽  
Doug Mercer
Keyword(s):  
Ion Implantation ◽  
Process Development ◽  
Cmos Technology ◽  
Low Energy ◽  
Defect Engineering ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Ultra Shallow Junctions ◽  
Technology Nodes ◽  
The Impact

ABSTRACTThe SIA roadmap predicts that junction depths of 500 angstroms are required for CMOS technology nodes of 0.18 μm or beyond by the year 2001. There are several ultra-shallow junction doping techniques currently under investigation. These include beamline ion implantation, plasma immersion ion implantation, and gas immersion laser doping. This study was based on beamline ion implantation of B, P, and As into single-crystal Si wafers at 0.25-2 keV to doses of (2- 10)×1014 at./cm2 with minimized beam energy contamination. Rapid thermal annealing was applied to the implanted wafers at 1000-1050 °C for 10-15 sec at ramp rates of 35- 50 °C/s in a N2 ambient. Transient enhanced diffusion was observed for all three implant species. For example, the depth of 0.25 keV B measured by SIMS increases from 250 to 520 A at a concentration level of l×1017 at./cm3 upon RTA. To minimize the TED, several schemes of defect engineering were applied prior to low energy implantation, including pre-amorphization and implantation of other species. A comparison of TED for different implantation conditions is given with the aim of process development for minimizing TED. The impact of energy contamination on ultra shallow junctions is also addressed.

Influence of Carbon on the Diffusion of Interstitials and Boron in Silicon

2000 ◽  
Vol 610 ◽  
Author(s):  
Mark E. Law ◽  
Michelle D. Griglione ◽  
Misty Northridge
Keyword(s):  
Binding Energy ◽  
Carbon Atom ◽  
Ab Initio ◽  
Point Defects ◽  
Initial Conditions ◽  
Carbon Diffusion ◽  
Reaction Rates ◽  
Interstitial Diffusion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

AbstractCarbon is a native impurity in Si which is known to trap self-interstitials and decrease their diffusivity. Carbon has also been observed to decrease B transient enhanced diffusion (TED) in Si through these interstitial interactions. Recently it has been proposed that vacancies must also be considered when accounting for the reduction of B TED. We have incorporated both the kick-out mechanism and the Frank-Turnbull (F-T) mechanism in simulations of interstitial diffusion and carbon diffusion, as well as experiments involving B diffusion in B doped superlattices (DSLs) with varying C concentration regions. We have used the binding energy between a carbon atom and a self-interstitial as a basis for the reaction rates for both mechanisms, and have found that an single energy of 2.25 eV best reproduces the results from several experiments, assuming equilibrium initial conditions for both mechanisms and ab-initio equilibrium values for all point defects.

The Influence of Cavities and Point Defects on Cu Gettering and B'Diffusion in Si

1997 ◽  
Vol 469 ◽  
Author(s):  
J. Wong-Leung ◽  
J. S. Williams ◽  
M. Petravić
Keyword(s):  
Point Defects ◽  
Subsequent Annealing ◽  
High Flux ◽  
Cavity Formation ◽  
Enhanced Diffusion ◽  
Metal Impurities ◽  
Transient Enhanced Diffusion ◽  
Boron Implantation ◽  
Hydrogen Implantation ◽  
Observed Behaviour

ABSTRACTCavities, formed in Si by hydrogen implantation and subsequent annealing, can provide ideal gettering sites for metal impurities. In this study, we have observed large differences in the accumulation of Cu at cavities depending on whether Cu was introduced into Si during cavity formation or into wafers with pre-formed cavities. The observed behaviour is consistent with a high flux of Si interstitials emitted during cavity formation which induce the dissolution of Cu3Si and the enhanced transport of Cu to cavities. In further studies, boron implantation was carried out into wafers containing pre-formed cavities and transient enhanced diffusion (TED) of boron was suppressed duringsubsequent annealing.

The Importance Of Pairing Reactions For The Modeling Of Defect-Dopant Interactions In Silicon

1998 ◽  
Vol 532 ◽  
Author(s):  
I. Bork ◽  
A. v. Schwerin ◽  
Siemens AG
Keyword(s):  
Low Temperature ◽  
Significant Role ◽  
Point Defects ◽  
Local Equilibrium ◽  
Diffusion Models ◽  
Experimental Results ◽  
Enhanced Diffusion ◽  
Temperature Transient ◽  
Transient Enhanced Diffusion ◽  
Good Agreement

ABSTRACTIn this article it is shown that the reactions between dopants and point defects in silicon are slow enough to play a significant role for low temperature transient enhanced diffusion (TED). As a consequence, diffusion models based on the assumption of local equilibrium between dopants and dopant-defect pairs highly overestimate TED at temperatures below 800°C. Without this assumption, i.e. when full dynamic pairing of dopants is included in simulations, good agreement to experimental results is achieved.

Application of Synchrotron Radiation to Analysis of Both Contamination and Structure of Silicon Surfaces and Interfaces

1998 ◽  
Vol 4 (S2) ◽  
pp. 346-347
Author(s):  
P. Pianetta ◽  
S. Brennan
Keyword(s):  
Synchrotron Radiation ◽  
Integrated Circuits ◽  
Silicon Wafer ◽  
Silicon Surfaces ◽  
Wafer Surface ◽  
X Ray ◽  
Enhanced Diffusion ◽  
Surfaces And Interfaces ◽  
X Ray Scattering ◽  
Wafer Surfaces

Synchrotron Radiation has become an important tool for the analysis of silicon surfaces in both fundamental and applied problems with techniques ranging from x-ray scattering to fluorescence. Applications that have been studied include the analysis of ultra-low levels of impurities on silicon wafer surfaces using the total external x-ray fluorescence technique (TXRF), measurement of silicon wafer surface roughness using crystal truncation rod scattering, measurement of the stress and defects associated with isolation trenches used in the fabrication of integrated circuits, and the study of transient enhanced diffusion in implanted silicon using x-ray diffuse scattering.As the dimensions of integrated circuits become smaller and smaller, the thickness of the gate oxide is being reduced to a level where it has become necessary to control the process to virtually atomic levels. With oxide thicknesses less than 100 Angstroms, surface impurities can have deleterious affects on the oxide properties.

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