The Importance Of Pairing Reactions For The Modeling Of Defect-Dopant Interactions In Silicon

1998 ◽  
Vol 532 ◽  
Author(s):  
I. Bork ◽  
A. v. Schwerin ◽  
Siemens AG
Keyword(s):  
Low Temperature ◽  
Significant Role ◽  
Point Defects ◽  
Local Equilibrium ◽  
Diffusion Models ◽  
Experimental Results ◽  
Enhanced Diffusion ◽  
Temperature Transient ◽  
Transient Enhanced Diffusion ◽  
Good Agreement

ABSTRACTIn this article it is shown that the reactions between dopants and point defects in silicon are slow enough to play a significant role for low temperature transient enhanced diffusion (TED). As a consequence, diffusion models based on the assumption of local equilibrium between dopants and dopant-defect pairs highly overestimate TED at temperatures below 800°C. Without this assumption, i.e. when full dynamic pairing of dopants is included in simulations, good agreement to experimental results is achieved.

Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-doped Layers

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Halimaoui ◽  
J. M. Hartmann ◽  
C. Laviron ◽  
R. El-Farhane ◽  
F. Laugier
Keyword(s):  
Point Defects ◽  
Depth Profiling ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
Sims Depth Profiling

ABSTRACTPreviously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.

Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion

2000 ◽  
Vol 610 ◽  
Author(s):  
Omer Dokumaci ◽  
Paul Ronsheim ◽  
Suri Hegde ◽  
Dureseti Chidambarrao ◽  
Lahir Shaik-Adam ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Diffusion ◽  
High Nitrogen ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
High Boron ◽  
Buried Layer ◽  
Higher Doses ◽  
Low Nitrogen ◽  
Temperature Furnace

AbstractThe effect of nitrogen implants on boron transient enhanced diffusion was studied for nitrogen-only, boron-only, and boron plus nitrogen implants. A boron buried layer was used as a detector for interstitial supersaturation in the samples. Boron dose ranged from 1×1014 to 1×1015 cm−2 and N2+ dose from 5×1013 and 5×1014 cm−2. The energies were chosen such that the location of the nitrogen and boron peaks matched. After the implants, RTA and low temperature furnace anneals were carried out. The diffusivity enhancements were extracted from the buried layer profiles by simulation. Nitrogen-only implants were found to cause significant enhanced diffusion on the buried boron layer. For lower doses, the enhancement of the nitrogen implant is about half as that of boron whereas the enhancements are equal at higher doses. Nitrogen coimplant with boron increases the transient enhanced diffusion of boron at low boron doses, which implies that nitrogen does not act as a strong sink for excess interstitials unlike carbon. At high boron doses, nitrogen co-implant does not significantly change boron diffusion. Sheet resistance measurements indicate that low nitrogen doses do not affect the activation of boron whereas high nitrogen doses either reduce the activation of boron or the mobility of the holes.

Modeling of Extended Defects in Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
M. E. Law ◽  
K. S. Jones ◽  
S. K. Earles ◽  
A. D. Lilak ◽  
J-W. Xu
Keyword(s):  
Low Temperature ◽  
Experimental Work ◽  
Quantitative Model ◽  
Extended Defects ◽  
Form Complex ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Short Time ◽  
Defect Behavior

AbstractTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Dopant segregation to {311} defects during low temperature annealing

1999 ◽  
Vol 568 ◽  
Author(s):  
Kenji Taniguchi ◽  
Tomoya Saito ◽  
Jianxin Xia ◽  
Ryangsu Kim ◽  
Takenori Aoki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
The Self ◽  
Dopant Segregation ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Boron Segregation ◽  
Low Temperature Annealing ◽  
Transient Enhanced Diffusion

ABSTRACTBoron segregation to {311} defects and transient enhanced diffusion (TED) of boron atoms during thermal annealing were investigated in detail using implanted superlattice and Si bulk wafers. We observed that (1)boron atoms segregate to {311} defects during low temperature annealing, (2){311} defects were formed in the area where the self-interstitial concentration exceeds 3×1017cm3, (3)free self-interstitials in the region beyond the implanted range causes initial rapid enhanced diffusion prior to the onset of normal TED.

Transient Enhanced Diffusion in B+ and P+ Implanted Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
S. J. Pennycook ◽  
R. J. Culbertson
Keyword(s):  
Heat Treatment ◽  
Point Defects ◽  
Diffusion Coefficients ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Dependent ◽  
Enhanced Diffusion ◽  
Thermally Activated ◽  
Transient Enhanced Diffusion ◽  
And Diffusion

AbstractWe report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion

1999 ◽  
Vol 568 ◽  
Author(s):  
D. Stiebel ◽  
P. Pichler ◽  
H. Ryssel
Keyword(s):  
Ion Implantation ◽  
Experimental Results ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Atoms ◽  
Insight Into

ABSTRACTWe present new experimental results on the transient enhanced diffusion (TED) of boron after ion implantation. The investigation is focussed on effects that influence TED of shallow profiles in the absence of {311}-defects. Under these conditions, TED is mainly determined by the formation of boron-interstitial complexes (BIC). In addition, effects from the proximity of the surface become more and more important. Insight into the behavior of the dopant atoms is obtained by the comparison with simulations.

Influence of Carbon on the Diffusion of Interstitials and Boron in Silicon

2000 ◽  
Vol 610 ◽  
Author(s):  
Mark E. Law ◽  
Michelle D. Griglione ◽  
Misty Northridge
Keyword(s):  
Binding Energy ◽  
Carbon Atom ◽  
Ab Initio ◽  
Point Defects ◽  
Initial Conditions ◽  
Carbon Diffusion ◽  
Reaction Rates ◽  
Interstitial Diffusion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

AbstractCarbon is a native impurity in Si which is known to trap self-interstitials and decrease their diffusivity. Carbon has also been observed to decrease B transient enhanced diffusion (TED) in Si through these interstitial interactions. Recently it has been proposed that vacancies must also be considered when accounting for the reduction of B TED. We have incorporated both the kick-out mechanism and the Frank-Turnbull (F-T) mechanism in simulations of interstitial diffusion and carbon diffusion, as well as experiments involving B diffusion in B doped superlattices (DSLs) with varying C concentration regions. We have used the binding energy between a carbon atom and a self-interstitial as a basis for the reaction rates for both mechanisms, and have found that an single energy of 2.25 eV best reproduces the results from several experiments, assuming equilibrium initial conditions for both mechanisms and ab-initio equilibrium values for all point defects.

The Influence of Cavities and Point Defects on Cu Gettering and B'Diffusion in Si

1997 ◽  
Vol 469 ◽  
Author(s):  
J. Wong-Leung ◽  
J. S. Williams ◽  
M. Petravić
Keyword(s):  
Point Defects ◽  
Subsequent Annealing ◽  
High Flux ◽  
Cavity Formation ◽  
Enhanced Diffusion ◽  
Metal Impurities ◽  
Transient Enhanced Diffusion ◽  
Boron Implantation ◽  
Hydrogen Implantation ◽  
Observed Behaviour

ABSTRACTCavities, formed in Si by hydrogen implantation and subsequent annealing, can provide ideal gettering sites for metal impurities. In this study, we have observed large differences in the accumulation of Cu at cavities depending on whether Cu was introduced into Si during cavity formation or into wafers with pre-formed cavities. The observed behaviour is consistent with a high flux of Si interstitials emitted during cavity formation which induce the dissolution of Cu3Si and the enhanced transport of Cu to cavities. In further studies, boron implantation was carried out into wafers containing pre-formed cavities and transient enhanced diffusion (TED) of boron was suppressed duringsubsequent annealing.

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